未登录

M

Martin Velazquez-Rizo

Institute of Nanotechnology

H指数:12

被引数:564

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Hierarchical Microstructured K3V2(PO4)3/C-Composite Electrode for Potassium-Ion-Batteries Through Scalable Spray-Drying Approach

通过可扩展喷雾干燥法制备的用于钾离子电池的层级微结构K3V2(PO4)3/C复合电极

IF6.6

2025-06-200

OA

Piezoresponse in WO3 Thin Films Enhanced by Pt-Nanoparticles as Revealed by Atom Probe Tomography and Cs-Transmission Electron Microscopy

WO3薄膜中的压电响应由Pt-纳米颗粒增强，如原子探针断层术和Cs-透射电子显微镜所示。

IF4.3

2025-04-250

OA

Protective Coating of Single-Crystalline Ni-Rich Cathode Enables Fast Charging in All-Solid-State Batteries

单晶富镍阴极的保护涂层可实现全固态电池的快速充电

IF16

2025-01-291

PRE

Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN

IF3.3

2021-10-0517

PRE

630-nm red InGaN micro-light-emitting diodes (<20 μmx20 μm) exceeding 1 mW/mm2 for full-color micro-displays

PHOTONICS RESEARCH

IF7.2

2021-08-2341

PRE

High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits

APPLIED PHYSICS LETTERS

IF3.6

2020-10-2712

OAAI

Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-Fe2O3 as cocatalyst

SCIENTIFIC REPORTS

IF3.9

2020-07-285

OAAI

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

APPLIED PHYSICS LETTERS

IF3.6

2020-04-20125

OAAI

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

IF3.3

2020-04-0929

OA

Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures

IF17.1

2019-05-0120

OAAI