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李

李玲｜Ling Li

Institute of Microelectronics of Chinese Academy of Sciences研究员
H指数:50
被引数:1.0万
浏览量:0

个人简介

"中国科学院软件研究所智能软件研究中心副主任，研究员，博导，国家级领军人才，CCF杰出会员，IEEE Senior Member。研究方向为智能计算、大模型。在相关领域出版中文书籍3本、英文书籍1本，发表40余篇CCF A类期刊和会议论文。主持过多项国家自然科学基金项目、国家重点研发计划课题、中科院先导C类专项课题等。曾获CCF A类会议MICRO最佳论文奖、中科院杰出科技成就奖、中国科学院大学教育教学成果奖特等奖等。"

教育背景

  • 2004.09 – 2009.06

    中国科学院计算技术研究所 博士

  • 2000.09 – 2004.06

    武汉大学 学士

工作经历

  • 2017.09 – 至今

    中国科学院软件研究所

    研究员

  • 2013.08 – 2017.09

    中国科学院自动化研究所

    副研究员

  • 2009.07 – 2013.08

    中国科学院计算技术研究所

    助理研究员

荣誉奖项

  1. 国家级领军人才
  2. CCF杰出会员｜CCF
  3. IEEE Senior Member｜IEEE
  4. CCF A类会议MICRO最佳论文奖
  5. 中科院杰出科技成就奖｜中科院
  6. 中国科学院大学教育教学成果奖特等奖｜中国科学院大学
Gate-All-Around IGZO FET with Tubular Channel Achieve High Current and Stability

环绕栅极IGZO FET通过管状沟道实现高电流和稳定性

IEEE Electron Device Letters
IF4.5
2026-10-230
PRE
Shipeng Wang; Weiwei Li; Kaiping Zhang; Jiebin Niu; Shengjie Zhao; Yu Liu; Huan Liu; Wenfeng Jiang; Congyan Lu; Guanya Wang; Cheng Lu; Chuanke Chen; Di Geng; Ling Li
Impact of Spatially Correlated Ionic Disorder and Interface Morphology on Forming Variability in Oxide RRAM

空间相关离子无序和界面形貌对氧化物RRAM形成可变性的影响

IEEE Transactions on Electron Devices
IF3.2
2026-10-080
PRE
Wenfeng Jiang; Yang Li; Di Geng; Jiawei Wang; Wei Wang; Ling Li
Unlocking the performance limits of 2T0C DRAM with Ω-shaped-gated single-crystal In2O3 FETs

利用Ω形栅极单晶In2O3 FETs解锁2T0C DRAM的性能极限

Science Advances
IF12.5
2026-05-290
OA
Shiyue Zuo; Zhengdao Xie; Xu Zhao; Lin Tang; Yidan Zhao; Yu Zeng; Wencheng Niu; Sen Liu; Qingjiang Li; Guanhua Yang; Ling Li; Zhipeng Wei; Cong Ye; Xuming Zou; Xingqiang Liu; Lei Liao; Penghui He
Fluctuation-Induced Tunneling Conduction: A Universal Model for Temperature-Dependent Transport in Oxide Semiconductor Transistors

波动诱导隧穿传导：一种用于氧化物半导体晶体管温度依赖性传输的通用模型

IEEE Electron Device Letters
IF4.5
2026-02-060
PRE
Ke Hu; Jiawei Wang; Ling Li
Gate-First/Channel-Last Process for High-Performance a-IGZO Gate-All-Around Nanosheet FETs
IEEE Electron Device Letters
IF4.5
2025-12-220
PRE
Shipeng Wang; Chuanke Chen; Congyan Lu; Chen Gu; Kaiping Zhang; Jiebin Niu; Yu Liu; Shengjie Zhao; Wenfeng Jiang; Qingding Tong; Yinzhi Tang; Jiahui Wu; Mengwen Yan; Ziheng Bai; Nianduan Lu; Weiwei Li; Di Geng; Ling Li
Improved Reliability of Short-Channel IGZO TFTs With Hydrogen Scavenger Gate Metal
IEEE Electron Device Letters
IF4.5
2025-12-180
PRE
Zihan Li; Menggan Liu; Guanhua Yang; Fuxi Liao; Kaifei Chen; Xuanming Zhang; Naide Mao; Congyan Lu; Jiebin Niu; Jinshan Yue; Zhicheng Wu; Jiawei Wang; Lingfei Wang; Di Geng; Nianduan Lu; Arokia Nathan; Ling Li
Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide

基于单层二硫化钼的亚阈值肖特基势垒晶体管

Nature Communications
IF15.7
2025-12-110
OA
Menggan Liu; Jiebin Niu; Guanhua Yang; Rikang Zhao; Kaifei Chen; Wendong Lu; Fuxi Liao; Zhenhua Wu; Chen Jiang; Di Geng; Nianduan Lu; Arokia Nathan; Ling Li; Ming Liu
High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs

采用垂直双栅IGZO TFT的高密度三维动态随机存取存储器集成

Nature Communications
IF15.7
2025-12-080
OAAI
Fuxi Liao; Zhengyong Zhu; Zihan Li; Guanhua Yang; Menggan Liu; Kaifei Chen; Wendong Lu; Zijing Wu; Xuanming Zhang; Naide Mao; Bok-Moon Kang; Jinghong Shi; Xie-Shuai Wu; Meichen Jin; Chang liu; Jing Zhang; Yong Yu; Gui-Lei Wang; Congyan Lu; Jinshan Yue; Lingfei Wang; Jiawei Wang; Di Geng; Nianduan Lu; Chao Zhao; Arokia Nathan; Ling Li; Ming Liu
Regulating the Li/Ni Mixing Ratio to Enhance Transition Metal-Lattice Oxygen Interaction for Achieving Long Life Lithium-Rich Layered Oxides

通过调控Li/Ni混合比以增强过渡金属-晶格氧相互作用，实现长寿命富锂层状氧化物

Angewandte Chemie International Edition
IF16.9
2025-11-100
PRE
Jialong Shen; Qijun Yu; Junpeng Sun; Jun Qian; Yuhang Lou; Liying Yue; Ling Li; Hanzhang Li; Dr. Wei Jiang; Mei Sun; Prof. Xianhong Rui; Prof. Xiaojun Wu; Dr. Hai Yang; Prof. Yan Yu
Boosting Reliability of In2O3 Thin-film Transistors by GeO2 Interlayer Engineering

通过GeO2中间层工程提升In2O3薄膜晶体管的可靠性

Vacuum
IF3.9
2025-10-280
PRE
Shundong Hu; Jiayi Wang; Kuo Zhang; Nannan You; Yang Xu; Ling Li; Shengkai Wang
Au NPs Intercalated MoTe2/ReS2 Heterojunction Photovoltaic Detectors for Image Processing and Motion Recognition

Au NPs 插层 MoTe2/ReS2 异质结光伏探测器用于图像处理和运动识别

Laser & Photonics Reviews
IF10
2025-10-280
PRE
Qunrui Deng; Gaoli Luo; Wenjie Chen; Yan Li; Ling Chen; Lingyu Zhu; Yuerong Lin; Xueting Liu; Ling Li; Xiang Ge; Yuan Pan; Wei Gao; Yiming Sun; Nengjie Huo
Lewis Acid-Triggered In-Situ Gelation of Ether Electrolytes for Durable Potassium Metal Batteries

路易斯酸引发醚类电解质原位凝胶化以实现耐用的钾金属电池

Energy Storage Materials
IF20.2
2025-10-200
PRE
Shuanghong Xia; Hao Zou; Yifan Jiang; Bo Huang; Ling Li; Wenming Zhang
Nonequilibrium Nitrogen Spike Annealing for Crystallization Enhancement Achieves High Mobility and Reliability in IGO TFTs

非平衡氮气脉冲退火用于结晶增强，实现了IGO TFTs的高迁移率和可靠性

Advanced Electronic Materials
IF5.3
2025-09-290
PREAI
Kuo Zhang; Jiayi Wang; Ziheng Bai; Chunyu Zhang; Tong Yu; Yang Xu; Nannan You; Rui Chen; Zhicheng Wu; Di Geng; Guanhua Yang; Shengkai Wang; Ling Li; Ming Liu
Bridge structure boosts the topological network connectivity of vanadium oxide for photo-responsive zinc-ion batteries

桥结构提升了氧化钒的光响应锌离子电池拓扑网络连接性。

composites part b engineering
IF0
2025-08-050
PRE
Xiaoyu Chen; Yingdi Zhou; Mengyu Liu; Ling Li; Song Chen; Wenming Zhang
Vertical Channel-All-Around (CAA) IGZO FET With Recessed Source/Drain Structure to Improve Contact Characteristics

垂直环绕通道（CAA）IGZO FET，采用凹陷源/漏结构以改善接触特性

IEEE Electron Device Letters
IF4.5
2025-07-010
PRE
Chuanke Chen; Chen Gu; Yue Zhao; Xinlv Duan; Congyan Lu; Jiebin Niu; Kaiping Zhang; Yu Liu; Shengjie Zhao; Weiwei Li; Wanming Wu; Chunyu Zhang; Ke Hu; Shipeng Wang; Qingding Tong; Yinzhi Tang; Nianduan Lu; Di Geng; Ling Li
Multiphysics-Coupled Ionic Migrations in Understanding Resistive Switching of Oxygen Vacancy-Based Resistive Random Access Memory (RRAM)

多物理场耦合离子迁移在理解基于氧空位阻变随机存取存储器（RRAM）的阻变开关中的作用

IEEE Transactions on Electron Devices
IF3.2
2025-07-010
PRE
Yang Li; Wei Wang; Wenfeng Jiang; Jiawei Wang; Lingfei Wang; Di Geng; Ling Li
An Analytical Device Model for Vertical Channel-All-Around InGaZnO Thin-Film Transistors

垂直环绕沟道InGaZnO薄膜晶体管的分析模型

IEEE Transactions on Electron Devices
IF3.2
2025-07-010
PRE
Guangzheng Yi; Yuan Li; Nianduan Lu; Guanhua Yang; Di Geng; Ling Li; Jun Yu; Arokia Nathan
High-Performance Polymer Monolayer Transistors with Sub-20 nm Channel Lengths

高性能聚合物单层晶体管，通道长度低于20纳米

ADVANCED MATERIALS
IF26.8
2025-05-060
PRE
Li, MM; Niu, JB; Li, XF; Tian, Y; Ding, CM; Lu, CY; Yang, ZZ; Huang, R; Wang, LF; Yan, H; Li, L; Liu, M
Spontaneous phase separation of KF-K/KZn13 achieves durable potassium metal anode

KF-K/KZn13的自发相分离实现了持久的钾金属阳极

CHEMICAL ENGINEERING JOURNAL
IF13.2
2025-05-010
PRE
Xia, Shuanghong; Zou, Hao; Zhang, Yuxuan; Zhu, Qiancheng; Li, Ling; Zhang, Wenming
Achieving High Reversible Anionic Redox Activity of Li-Rich Layered Oxides via Mg and Mo Co-Doping

通过Mg和Mo共掺杂实现高可逆的锂富层状氧化物阴离子氧化还原活性

ADVANCED FUNCTIONAL MATERIALS
IF19
2025-04-090
PRE
Shen, JL; Lou, YH; Sun, JP; Li, HZ; Li, L; Jang, W; Ye, SF; Wu, XJ; Yang, H; Yu, Y

研究方向

智能计算大模型高性能代码生成
N
Nianduan Lu
H 指数:33论文数:183被引数:3,541
刘
刘明
H 指数:79论文数:648被引数:2.2万
D
Di Geng
H 指数:30论文数:160被引数:2,700
C
Congyan Lu
H 指数:22论文数:82被引数:1,498
杨冠华 封面图
杨冠华
H 指数:28论文数:153被引数:3,198
Q
Qinglin Liu
H 指数:70论文数:305被引数:1.4万
Z
Zhuoyu Ji
H 指数:30论文数:115被引数:2,805
J
Jiawei Wang
H 指数:5论文数:23被引数:93
J
Jiebin Niu
H 指数:29论文数:148被引数:3,027
Qiu-Gen ZHANG 封面图
Qiu-Gen ZHANG
H 指数:62论文数:268被引数:9,794