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S

S. Maikap

chang gung university

33H指数
250论文数
3.7K被引数
收录论文 59
发表时间
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AI-Assisted Ultrasensitive Biosensing using Metal-Electrolyte-Metal-Insulator-Silicon Structure Based on Oxygen-Tunable Iridium Oxide Nanonets for Lysyl-Oxidase-Like-2 Breast Cancer Detection基于氧调谐铱氧化物纳米网的金-电解质-金-绝缘体-硅结构用于赖氨酰氧化酶样2乳腺癌检测的AI辅助超高灵敏度生物传感
errAdvanced Electronic Materials
IF5.3
err2026-09-15
err0
errOAAI
errChiao-Fan Chiu; Pankaj Kumar; Long Nguyen Minh Le; Ping-Hsuan Wu; Punnatorn Boonyoung; Shen Tingyang; Abhijit Aich; Yi-Pin Chen; Shih-Yin Huang; Siddheswar Maikap
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Enhancing switching uniformity and sarcosine sensing of IrOx/Al2O3/W memristive devices: from via-hole to cross-point architecture with AI-driven linearity optimization通过AI驱动的线性度优化，从通孔到交叉点架构提升IrOx/Al2O3/W忆阻器的开关均匀性和 sarcosine 感知性能
errApplied Surface Science
IF6.9
err2026-09-08
err0
PREAI
errChiao-Fan Chiu; Rajeswar Panja; Long Nguyen Minh Le; Ping-Hsuan Wu; Punnatorn Boonyoung; Wachiraporn Poomeesap; Shen Tingyang; Abhijit Aich; Anisha Roy; Asim Senapati; Sourav Roy; Yi-Pin Chen; Shih-Yin Huang; Siddheswar Maikap
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Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral (R3) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric Memory对称指导的无插层菱方相（R3）氧化铪功能路径及其从岩盐相衍生过程，用于低矫顽力铁电存储器
errACS Applied Materials & Interfaces
IF0
err2026-04-01
err0
errOAAI
errMochamad Januar; Cheng-Hong Liu; Abhijit Aich; Jia-Yang Lee; Siddheswar Maikap; Min-Hung Lee
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Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing亚2纳米等效氧化物厚度铁电晶体管用于低温存储和计算
errACS Nano
IF16
err2026-03-31
err0
errOAAI
errApu Das; Asim Senapati; Gautham Kumar; Zhao-Feng Lou; Jonas Müller; Jaskirat Singh Maskeen; Yii-Tay Chang; Mohit Tewari; Ankit Agarwal; Agniva Paul; Yannick Raffel; Siddheswar Maikap; Kuo-Hsing Kao; Tarun Agarwal; Sandip Lashkare; Darsen Lu; Guilhem Larrieu; Min-Hung Lee; Sourav De
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Ferroelectric Memcapacitor on SOI for High Capacitive Ratio by Mechanism of Depletion Capacitance Modulation Toward Dimension Scaling Down
errIEEE Electron Device Letters
IF4.5
err2025-12-24
err0
PREAI
errZ.-F. Lou; B.-R. Chen; A. Aich; J.-H. Chen; S. T. Chang; S. Maikap; Pin Su; M. H. Lee
err分享
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Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1-xO2 Interface and Evidence of Fatigue Mechanism
errADVANCED MATERIALS INTERFACES
IF4.4
err2024-06-27
err1
errOAAI
errAich, Abhijit; Senapati, Asim; Lou, Zhao-Feng; Chen, Yi-Pin; Huang, Shih-Yin; Maikap, Siddheswar; Lee, Min-Hung; Liu, Chee Wee
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Memristive and artificial synapse performance by using TiOx/Al2O3 interface engineering in MoS2-based metallic filament memory通过在MoS2-based金属丝存储器中使用TiOx/Al2O3界面工程实现忆阻和人工突触性能
errJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
IF4.9
err2021-04-01
err20
PREAI
errGinnaram, Sreekanth; Maikap, Siddheswar
err分享
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Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points
errVACUUM
IF3.9
err2020-06-01
err23
PREAI
errDutta, Mrinmoy; Senapati, Asim; Ginnaram, Sreekanth; Maikap, Siddheswar
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Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiOx Membrane on Vertical Silicon Nanowires in Electrolyte-Insulator-Nanowire Structure
errANALYTICAL CHEMISTRY
IF6.7
err2020-05-13
err20
PREAI
errRoy, Anisha; Chen, Yi-Pin; Qiu, Jiantai Timothy; Maikap, Siddheswar
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Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a-COx-Based Conductive Bridge Random Access Memory
errACS OMEGA
IF4.3
err2020-03-17
err33
errOAAI
errGinnaram, Sreekanth; Qiu, Jiantai Timothy; Maikap, Siddheswar
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Sensing characteristics of dopamine using Pt/n-Si structure
errVACUUM
IF3.9
err2020-02-01
err4
PREAI
errRoy, Anisha; Maikap, Siddheswar; Tzeng, Pei-Jer; Qiu, Jiantai Timothy
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Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM
errLANGMUIR
IF3.9
err2019-02-21
err43
PREAI
errQiu, Jiantai Timothy; Samanta, Subhranu; Dutta, Mrinmoy; Ginnaram, Sreekanth; Maikap, Siddheswar
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Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure
errAPPLIED SURFACE SCIENCE
IF6.9
err2018-03-01
err30
PREAI
errChakrabarti, Somsubhra; Panja, Rajeswar; Roy, Sourav; Roy, Anisha; Samanta, Subhranu; Dutta, Mrinmoy; Ginnaram, Sreekanth; Maikap, Siddheswar; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Jana, Debanjan; Qiu, Jian-Tai; Yang, Jer-Ren
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Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2017-12-01
err12
PREAI
errRoy, Sourav; Roy, Anisha; Panja, Rajeswar; Samanta, Subhranu; Chakrabarti, Somsubhra; Yu, Po-Lin; Maikap, Siddheswar; Cheng, Hsin-Ming; Tsai, Ling-Na; Qiu, Jian-Tai
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Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaOx-Based Memory Platform
errADVANCED MATERIALS INTERFACES
IF4.4
err2017-11-24
err26
PREAI
errSamanta, Subhranu; Maikap, Siddheswar; Roy, Anisha; Jana, Surajit; Qiu, Jian-Tai
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Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection
errSCIENTIFIC REPORTS
IF3.9
err2017-09-11
err33
errOAAI
errSamanta, Subhranu; Rahaman, Sheikh Ziaur; Roy, Anisha; Jana, Surajit; Chakrabarti, Somsubhra; Panja, Rajeswar; Roy, Sourav; Dutta, Mrinmoy; Ginnaram, Sreekanth; Prakash, Amit; Maikap, Siddheswar; Cheng, Hsin-Ming; Tsai, Ling-Na; Qiu, Jian-Tai; Ray, Samit K.
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Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
errSCIENTIFIC REPORTS
IF3.9
err2017-07-05
err56
errOAAI
errChakrabarti, Somsubhra; Ginnaram, Sreekanth; Jana, Surajit; Wu, Zong-Yi; Singh, Kanishk; Roy, Anisha; Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Yang, Jer-Ren
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Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOx Film in IrOx/GdOx/W Structure for Biomedical Applications
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2017-02-14
err18
errOAAI
errKumar, Pankaj; Maikap, Siddheswar; Ginnaram, Sreekanth; Qiu, Jian-Tai; Jana, Debanjan; Chakrabarti, Somsubhra; Samanta, Subhranu; Singh, Kanishk; Roy, Anisha; Jana, Surajit; Dutta, Mrinmoy; Chang, Ya-Ling; Cheng, Hsin-Ming; Mahapatra, Rajat; Chiu, Hsien-Chin; Yang, Jer-Ren
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Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdOx Membrane in Electrolyte-Insulator-Semiconductor Structure
errNANOSCALE RESEARCH LETTERS
IF4.1
err2016-09-29
err6
errOAAI
errKumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Jana, Surajit; Roy, Anisha; Singh, Kanishk; Cheng, Hsin-Ming; Chang, Mu-Tung; Mahapatra, Rajat; Chiu, Hsien-Chin; Yang, Jer-Ren
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Highly Reliable Label-Free Detection of Urea/Glucose and Sensing Mechanism Using SiO2 and CdSe-ZnS Nanoparticles in Electrolyte-Insulator-Semiconductor Structure
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2016-09-16
err22
errOAAI
errKumar, Pankaj; Maikap, Siddheswar; Singh, Kanishk; Chatterjee, Subhodeep; Chen, Yi-Yan; Cheng, Hsin-Ming; Mahapatra, Rajat; Qiu, Jian-Tai; Yang, Jer-Ren
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研究方向

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合作学者
合作期刊
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H 指数: 59 · 论文数: 301
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H 指数: 50 · 论文数: 344
W
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H 指数: 48 · 论文数: 329
G
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H 指数: 43 · 论文数: 411
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