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G

Gouri Sankar Kar

IMEC

43H指数
411论文数
7.3K被引数
收录论文 58
发表时间
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Advances in gate stack development for p-type 2D channel FETs through sacrificial WSe2 bilayer oxidation通过牺牲性WSe2双层氧化实现p型二维通道FET栅堆叠发展的进展
errnpj 2D Materials and Applications
IF8.8
err2026-08-07
err0
errOAAI
errTien Dat Ngo; Goutham Arutchelvan; Sui-An Chou; Zaoyang Lin; Robert K. Grubbs; Souvik Ghosh; Daire Cott; Kaustuv Banerjee; Xiangyu Wu; Ming-Yang Li; Mark J. H. van Dal; Cesar Javier Lockhart de la Rosa; Gouri Sankar Kar; Iuliana P. Radu; Bogdan Govoreanu
err分享
err收藏
Recrystallization-Driven Formation of Single-Crystalline MoS2 by Metal-Organic Chemical Vapor Epitaxy
errSmall Methods
IF9.1
err2026-07-28
err0
PREAI
errIryna Kandybka; Pawan Kumar; Henry Medina Silva; Benjamin Groven; Ankit Nalin Mehta; Yuanyuan Shi; Quentin Smets; Tom Schram; Dhirendra Pratap Singh; Sreetama Banerjee; Cesar Javier Lockhart de la Rosa; Gouri Sankar Kar; Pierre Morin; Annelies Delabie
err分享
err收藏
Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs掺杂和沟道不均匀性对工业制备的WS2 FETs稳定性的影响
errnpj 2D Materials and Applications
IF8.8
err2025-12-12
err0
errOAAI
errL. Panarella; B. Kaczer; Q. Smets; T. Nuytten; B. Van Troeye; S. Tyaginov; P. Saraza-Canflanca; T. Grasser; C. Lockhart de la Rosa; G. S. Kar; V. Afanas’ev
err分享
err收藏
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability基于位置感知的错误校正方法，用于缓解互连对STT-MRAM可靠性的影响
errIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
IF2.3
err2025-12-01
err0
PREAI
errHemaram, Surendra; Marinelli, Tommaso; Mayahinia, Mahta; Tahoori, Mehdi B.; Catthoor, Francky; Rao, Siddharth; Redondo, Fernando Garcia; Kar, Gouri Sankar
err分享
err收藏
Controllable p-Type Doping of 2D WSe2 pFET by Engineered Surface Charge Transfer Doping With Metal Co-Seeding通过工程化表面电荷转移掺杂与金属共播种，实现二维WSe2 pFET的可控p型掺杂
errIEEE Electron Device Letters
IF4.5
err2025-10-03
err0
PREAI
errTien Dat Ngo; Xiangyu Wu; Kaustuv Banerjee; Olivier Richard; César Javier Lockhart de la Rosa; Gouri Sankar Kar; Bogdan Govoreanu
err分享
err收藏
Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility种子层效应对与后端工艺兼容的La掺杂铪锆氧化物相演变的影响
errApplied Surface Science
IF6.9
err2025-10-01
err0
PREAI
errDae Seon Kwon; Jasper Bizindavyi; Pradyumna Kumar Parida; Gourab De; Hyun-Cheol Kim; Olivier Richard; Paola Favia; Attilio Belmonte; Annelies Delabie; Laura Nyns; Gouri Sankar Kar; Jan Van Houdt; Mihaela Ioana Popovici
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Phase and orientation evolution of Bismuth during heteroepitaxy on ML-MoS2/Sapphire (0001) surfaces铋在异质外延生长于ML-MoS2/蓝宝石(0001)表面的相和取向演化
errJournal of Materials Science
IF3.9
err2025-09-05
err0
PREAI
errGaohang He; Aryan Afzalian; Olivier Richard; Stefanie Sergeant; Thomas Nuytten; Surajit Sutar; Kaustuv Banerjee; César Javier Lockhart de la Rosa; Gouri Sankar Kar; Stefan De Gendt; Clement Merckling
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Interface trap states induced underestimation of Schottky barrier height in metal-MX2 junctions界面陷阱态引起的metal-MX2结中肖特基势垒高度的低估
errnpj 2D Materials and Applications
IF8.8
err2025-07-01
err0
errOAAI
errHimani Jawa; Devin Verreck; Zheng Sun; Surajit Sutar; Cesar Javier Lockhart de la Rosa; Gouri Sankar Kar; Joerg Appenzeller
err分享
err收藏
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM原子层刻蚀IGZO基无电容DRAM的保持力提升路径
errIEEE Electron Device Letters
IF4.5
err2025-07-01
err0
PREAI
errK. Izukashi; D. Matsubayashi; A. Belmonte; S. Kundu; Y. Wan; F. G. Redondo; H. Oh; A. Sharma; S. Subhechha; H. Puliyalil; A. Chasin; H. Dekkers; A. Pavel; N. Rassoul; G. S. Kar
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err收藏
In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTIIn-Poor IGZO: 在形成气体退火和PBTI中对氢的卓越抗性
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-04-28
err0
PREAI
errKruv, A; van Setten, MJ; Chasin, A; Matsubayashi, D; Dekkers, HFW; Pavel, A; Wan, YQ; Trivedi, K; Rassoul, N; Li, J; Jiang, YC; Subhechha, S; Pourtois, G; Belmonte, A; Kar, GS
err分享
err收藏
Benchmarking of Scaled Majority-Logic-Synthesized Spintronic Circuits Based on Magnetic Tunnel Junction Transducers基于磁性隧道结换能器的缩放多数逻辑合成自旋电子电路的基准测试
errIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
IF5.2
err2025-01-01
err1
PREAI
errMeng, Fanfan; Lee, Siang-Yun; Zografos, Odysseas; Gupta, Mohit; Nguyen, Van D.; De Micheli, Giovanni; Cotofana, Sorin; Asselberghs, Inge; Adelmann, Christoph; Kar, Gouri Sankar; Couet, Sebastien; Ciubotaru, Florin
err分享
err收藏
Asymmetric and Adaptive Error Correction in STT-MRAM自旋转移矩磁随机存取存储器(STT-MRAM)中的非对称和自适应纠错
errIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IF2.9
err2025-01-01
err0
PREAI
errSurendra Hemaram; Mehdi B. Tahoori; Francky Catthoor; Siddharth Rao; Sebastien Couet; Tommaso Marinelli; Valerio Pica; Gouri Sankar Kar
err分享
err收藏
Investigation of the role of in-plane stress behavior on ferroelectric properties of scaled-up hafnium zirconium oxide superlattices研究面内应力行为对放大尺寸的铪锆氧化物超晶格铁电性能的影响
errNANOSCALE
IF5.1
err2025-01-01
err0
PREAI
errDe, Gourab; Popovici, Mihaela Ioana; Mukherjee, Shankha; Kwon, Dae Seon; Luciano, Federica; Murphy, Tony; Kar, Gouri Sankar; Delabie, Annelies; Van Houdt, Jan
err分享
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Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-10-28
err0
PREAI
errPanarella, Luca; Tyaginov, Stanislav; Kaczer, Ben; Smets, Quentin; Verreck, Devin; Makarov, Alexander; Schram, Tom; Lin, Dennis; de la Rosa, Cesar Javier Lockhart; Kar, Gouri S.; Afanas'ev, Valeri
err分享
err收藏
Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-07-26
err0
PREAI
errKwon, Dae Seon; Bizindavyi, Jasper; De, Gourab; Belmonte, Attilio; Delabie, Annelies; Nyns, Laura; Kar, Gouri Sankar; Van Houdt, Jan; Popovici, Mihaela Ioana
err分享
err收藏
Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs
errNPJ 2D MATERIALS AND APPLICATIONS
IF8.8
err2024-07-14
err0
errOAAI
errPanarella, Luca; Kaczer, Ben; Smets, Quentin; Tyaginov, Stanislav; Canflanca, Pablo Saraza; Vici, Andrea; Verreck, Devin; Schram, Tom; Lin, Dennis; Knobloch, Theresia; Grasser, Tibor; de la Rosa, Cesar Lockhart; Kar, Gouri S.; Afanas'ev, Valeri
err分享
err收藏
Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-05-24
err2
PREAI
errLin, Zaoyang; Wu, Xiangyu; Cott, Daire; Shi, Yuanyuan; Silva, Henry Medina; Sergeant, Stefanie; Conard, Thierry; Meersschaut, Johan; Mehta, Ankit Nalin; Groven, Benjamin; Morin, Pierre; Asselberghs, Inge; de la Rosa, Cesar Javier Lockhart; Kar, Gouri Sankar; Lin, Dennis; Delabie, Annelies
err分享
err收藏
Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions纳米级磁隧道结中的自旋轨道转矩矢量量化
errACS NANO
IF16
err2024-05-15
err3
PREAI
errSethu, Kiran Kumar Vudya; Yasin, Farrukh; Swerts, Johan; Soree, Bart; De Boeck, Johan; Kar, Gouri Sankar; Garello, Kevin; Couet, Sebastien
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err收藏
Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements通过原位扫描探针显微镜测量直接评估单层MoS2场效应晶体管中的缺陷区域
errACS NANO
IF16
err2024-04-01
err0
PREAI
errMinj, Albert; Mootheri, Vivek; Banerjee, Sreetama; Nalin Mehta, Ankit; Serron, Jill; Hantschel, Thomas; Asselberghs, Inge; Goux, Ludovic; Kar, Gouri Sankar; Heyns, Marc; Lin, Dennis H. C.
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Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current弯曲电流驱动的垂直磁性隧道结的无场自旋轨道转矩开关
errNANO LETTERS
IF9.1
err2023-06-09
err17
errOAAI
errKateel, Vaishnavi; Krizakova, Viola; Rao, Siddharth; Cai, Kaiming; Gupta, Mohit; Monteiro, Maxwel Gama; Yasin, Farrukh; Soree, Bart; De Boeck, Johan; Couet, Sebastien; Gambardella, Pietro; Kar, Gouri Sankar; Garello, Kevin
err分享
err收藏

研究方向

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