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Yoshihiro Sugawara

Japan Fine Ceramics Center

H指数:27

被引数:3,670

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Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns

JOURNAL OF MATERIALS SCIENCE

IF3.9

2024-02-190

PRE

Composite anode for fluoride-ion batteries using alloy formation and phase separation in charge and discharge processes

在充放电过程中使用合金形成和相分离的氟离子电池复合阳极

JOURNAL OF MATERIALS CHEMISTRY A

IF9.5

2024-01-013

OA

Time-domain Brillouin imaging of sound velocity and refractive index using automated angle scanning

IF6.8

2023-06-014

OAAI

Characterization of dislocations at the emission site by emission microscopy in GaN p-n diodes

JOURNAL OF MATERIALS SCIENCE

IF3.9

2023-05-313

PRE

Latticemisorientation at domain boundaries in β-Ga2O3 single-crystal substrates observed via synchrotron radiation X-ray diffraction imaging and X-ray reticulography

JOURNAL OF THE AMERICAN CERAMIC SOCIETY

IF3.8

2023-05-062

OA

X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias

Β-ga2o3肖特基势垒二极管位错的x射线形貌观察及其在反向偏置下的滑移和倍增

SCRIPTA MATERIALIA

IF5.6

2023-03-014

OAAI

Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-10-184

PRE

Large-area total-thickness imaging and Burgers vector analysis of dislocations in β-Ga2O3 using bright-field x-ray topography based on anomalous transmission

APPLIED PHYSICS LETTERS

IF3.6

2022-07-0511

PRE

Etch pit formation on β-Ga2O3 by molten KOH plus NaOH and hot H3PO4 and their correlation with dislocations

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2022-07-019

PRE

Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography

IF4.5

2022-05-0312

OA

Mechanism of molten KOH plus NaOH etching of GaN revealed by the slopes of etch pits formed at threading dislocations

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2022-05-018

PRE

A synchrotron X-ray topography study of crystallographic defects in ScAlMgO4 single crystals

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2022-03-015

PRE

Study of dislocations in AlN single-crystal using bright-field synchrotron x-ray topography under a multiple-beam diffraction condition

APPLIED PHYSICS LETTERS

IF3.6

2020-09-015

PREAI

Microscopic characterization of the C-F bonds in fluorine-graphite intercalation compounds

氟-石墨插层化合物中c-f键的微观表征

JOURNAL OF POWER SOURCES

IF7.9

2020-01-0130

OAAI

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

APPLIED PHYSICS LETTERS

IF3.6

2018-05-04169

PREAI

Interfacial Atomic Structures of Single-Phase Li2MnO3 Thin Film with Superior Initial Charge-Discharge Behavior

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2018-01-0414

OAAI

Revelation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping

通过Na2O2添加剂的KOH蚀刻和阴极发光映射揭示HVPE GaN单晶中的位错

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2016-11-0135

OAAI

Flower-like surface modification of titania materials by lithium hydroxide solution

JOURNAL OF COLLOID AND INTERFACE SCIENCE

IF9.7

2012-05-0113

OAAI

Omnidirectional absorption in nanostructured metal surfaces

NATURE PHOTONICS

IF32.9

2008-04-27454

PREAI

Localized and delocalized plasmons in metallic nanovoids

PHYSICAL REVIEW B

IF3.7

2006-12-13266

PREAI