未登录 Dynamic characteristic of 1200V p-GaN HEMT with ±20V gate operating range on the Si Substrates 在Si衬底上具有±20V栅极工作范围的1200V p-GaN HEMT的动态特性 Zhao, Yaopeng; Hao, Jiamao; Shi, Jiahao; Luo, Pan; Li, Ang; Luo, Jingtao; Wang, Chong; Wang, Jianyuan; Liu, Kai; Yang, Lei; Wen, Haibing; Tan, Cher Ming 分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏
Highly adsorptive removal of heavy metal, dye, and antibiotic pollutants using functionalized graphene nanosheets sono-electrochemically derived from graphitic waste Mai, Nguyen Thi; Thanh, Dang Van; Hien, Trinh Ngoc; Hanh, Hoa Thi Hong; Hoa, Le Thi Thanh; Khai, Nguyen Manh; Bich, Do Danh; Nguyen, Duc Dung; Tan, Cher Ming; Hao, Pham Van 分享 收藏
分享 收藏
Realizing SnF2-TMAB passivated lead-free formamidinum perovskite solar cells with doctor-bladed carbon electrode Mishra, Debesh Devadutta; Rath, Pranati Kumari; Thirugnanam, Natarajan; Shen, Tao; Chen, Zihe; Zhang, Zexian; Liu, Xinghang; Li, Jinhua; Wang, Xianbao; Tan, Cher Ming 分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏
分享 收藏