Si Joon Kim - Publications, H-index & Citations

Si Joon Kim

Kangwon National University

26H指数

97论文数

2.5K被引数

收录论文 42

发表时间

Machine learning-guided optimization of atomic layer deposition process 机器学习引导的原子层沉积工艺优化

Communications Materials

IF9.6

2026-06-09

OAAI

Minjong Lee; Doo San Kim; Thi Thu Huong Chu; Dushyant M. Narayan; Dan N. Le; Soubhik De; Soham Shirodkar; Seungbin Lee; Sihoon Son; Ji Eun Kang; Hyunbin Choi; Sun Jae Jeong; Taesung Kim; Geun Young Yeom; Si Joon Kim; Jiyoung Kim

Field-Induced Enhancement of Ferroelectric Switching in Hf0.5Zr0.5O2 Capacitors under Cryogenic Conditions 低温条件下Hf0.5Zr0.5O2电容器中电场诱导的铁电开关增强

ACS Applied Electronic Materials

IF4.7

2026-03-31

PREAI

Seungbin Lee; Minjong Lee; Yeseo Choi; Hye Ryeon Park; Jongmug Kang; Hyeonhong Min; Gwanghyeon Jang; Yechan Kim; Dushyant M. Narayan; Ye-Eun Hong; Rino Choi; Min Hwan Lee; Jiyoung Kim; Si Joon Kim

Experimental Demonstration of Capacitive in-Memory Computing Using Ferroelectric HZO Memcapacitors 使用铁电HZO memcapacitor进行电容式内存计算的实验演示

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-11-01

OAAI

Lee, Minjong; Hernandez-arriaga, Heber; Narayan, Dushyant M.; Shirodkar, Soham; Jung, Yong Chan; Le, Dan N.; Park, Seongbin; Kang, Jongmug; Lee, Seungbin; Min, Hyeonhong; Jang, Gwanghyeon; Kim, Si Joon; Kim, Jiyoung

Thermal budget study to simultaneously achieve low-temperature (<400 °C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films

APPLIED PHYSICS LETTERS

IF3.6

2025-03-01

PREAI

Kang, Jongmug; Park, Seongbin; Park, Hye Ryeon; Lee, Seungbin; Kim, Jin-Hyun; Lee, Minjong; Narayan, Dushyant M.; Yoo, Jeong Gyu; Park, Geon; Kim, Harrison Sejoon; Jung, Yong Chan; Choi, Rino; Kim, Jiyoung; Kim, Si Joon

Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches 用于内存计算的基于氧化铪的铁电器件: 电阻和电容方法

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-08-16

PREAI

Lee, Minjong; Narayan, Dushyant M.; Kim, Jin-Hyun; Le, Dan N.; Shirodkar, Soham; Park, Seongbin; Kang, Jongmug; Lee, Seungbin; Ahn, Youngbae; Ryu, Seung Wook; Kim, Jiyoung; Kim, Si Joon

Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors 在低温 (400 °C) 处理的基于Hf0.5Zr0.5O2的金属-铁电-金属电容器中，由压印现象引起的弛豫

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-02-14

PREAI

Mohan, Jaidah; Jung, Yong Chan; Hernandez-Arriaga, Heber; Kim, Jin-Hyun; Onaya, Takashi; Sahota, Akshay; Hwang, Su Min; Le, Dan N.; Kim, Jiyoung; Kim, Si Joon

Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

APPLIED PHYSICS LETTERS

IF3.6

2021-12-13

PREAI

Kim, Si Joon; Jung, Yong Chan; Mohan, Jaidah; Kim, Hyo Jeong; Rho, Sung Min; Kim, Min Seong; Yoo, Jeong Gyu; Park, Hye Ryeon; Hernandez-Arriaga, Heber; Kim, Jin-Hyun; Kim, Hyung Tae; Choi, Dong Hyun; Jung, Joohye; Hwang, Su Min; Sejoon Kim, Harrison; Kim, Hyun Jae; Kim, Jiyoung

Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-04-05

PREAI

Kim, Harrison Sejoon; Sahota, Akshay; Mohan, Jaidah; Lucero, Antonio T.; Jung, Yong Chan; Kim, Minji; Lee, Jang-Sik; Choi, Rino; Kim, Si Joon; Kim, Jiyoung

Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon

APPLIED PHYSICS LETTERS

IF3.6

2021-03-10

OAAI

Mohan, Jaidah; Hernandez-Arriaga, Heber; Jung, Yong Chan; Onaya, Takashi; Nam, Chang-Yong; Tsai, Esther H. R.; Kim, Si Joon; Kim, Jiyoung

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2Thin Films

MATERIALS

IF3.2

2020-07-02

OAAI

Kim, Si Joon; Mohan, Jaidah; Kim, Harrison Sejoon; Hwang, Su Min; Kim, Namhun; Jung, Yong Chan; Sahota, Akshay; Kim, Kihyun; Yu, Hyun-Yong; Cha, Pil-Ryung; Young, Chadwin D.; Choi, Rino; Ahn, Jinho; Kim, Jiyoung

Multifunctional, Room-Temperature Processable, Heterogeneous Organic Passivation Layer for Oxide Semiconductor Thin-Film Transistors (vol 12, pg 2615, 2020)

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-02-19

PREAI

Tak, Young Jun; Keene, Scott Tom; Kang, Byung Ha; Kim, Won-Gi; Kim, Si Joon; Salleo, Alberto; Kim, Hyun Jae

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2020-01-01

PREAI

Kim, Harrison Sejoon; Hwang, Su Min; Meng, Xin; Byun, Young-Chul; Jung, Yong Chan; Ravichandran, Arul Vigneswar; Sahota, Akshay; Kim, Si Joon; Ahn, Jinho; Lee, Lance; Zhou, Xiaobing; Hwang, Byung Keun; Kim, Jiyoung

Multifunctional, Room-Temperature Processable, Heterogeneous Organic Passivation Layer for Oxide Semiconductor Thin-Film Transistors

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-12-18

PREAI

Tak, Young Jun; Keene, Scott Tom; Kang, Byung Ha; Kim, Won-Gi; Kim, Si Joon; Salleo, Alberto; Kim, Hyun Jae

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

APPLIED PHYSICS LETTERS

IF3.6

2019-10-31

PREAI

Kim, Si Joon; Mohan, Jaidah; Kim, Harrison Sejoon; Lee, Jaebeom; Hwang, Su Min; Narayan, Dushyant; Lee, Jae-Gil; Young, Chadwin D.; Colombo, Luigi; Goodman, Gary; Wan, Alan S.; Cha, Pil-Ryung; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung

Stress-Induced Crystallization of Thin Hf1-XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-01-17

PREAI

Kim, Si Joon; Mohan, Jaidah; Lee, Joy S.; Kim, Harrison Sejoon; Lee, Jaebeom; Young, Chadwin D.; Colombo, Luigi; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper 等离子体增强原子层沉积氮化硅作为刻蚀阻挡层的物理性能研究

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-11-28

PREAI

Kim, Harrison Sejoon; Meng, Xin; Kim, Si Joon; Lucero, Antonio T.; Cheng, Lanxia; Byun, Young-Chul; Lee, Joy S.; Hwang, Su Min; Kondusamy, Aswin L. N.; Wallace, Robert M.; Goodman, Gary; Wan, Alan S.; Telgenhoff, Michael; Hwang, Byung Keun; Kim, Jiyoung

Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

APPLIED PHYSICS LETTERS

IF3.6

2018-10-30

PREAI

Kim, Si Joon; Mohan, Jaidah; Kim, Harrison Sejoon; Lee, Jaebeom; Young, Chadwin D.; Colombo, Luigi; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

APPLIED PHYSICS LETTERS

IF3.6

2018-04-26

134

PREAI

Kim, Si Joon; Mohan, Jaidah; Lee, Jaebeom; Lee, Joy S.; Lucero, Antonio T.; Young, Chadwin D.; Colombo, Luigi; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung

Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH3NH3PbI3 Films

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-03-26

PREAI

Tak, Young Jun; Kim, Dong Jun; Kim, Won-Gi; Lee, Jin Hyeok; Kim, Si Joon; Kinn, Jong Hak; Kim, Hyun Jae

All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2018-01-01

PREAI

Tak, Young Jun; Kim, Si Joon; Kwon, Sera; Kim, Hee Jun; Chung, Kwun-Bum; Kim, Hyun Jae

研究方向