logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
J

J. William

m.a.m. college of engineering & technology

12H指数
58论文数
475被引数
收录论文 4
发表时间
logo
Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications
errJOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
IF6.8
err2017-12-01
err15
errOAAI
errMurugapandiyan, P.; Ravimaran, S.; William, J.
err分享
err收藏
Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2017-11-01
err28
PREAI
errMurugapandiyan, P.; Ravimaran, S.; William, J.; Sundaram, K. Meenakshi
err分享
err收藏
DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2017-09-01
err14
PREAI
errMurugapandiyan, P.; Ravimaran, S.; William, J.; Ajayan, J.; Nirmal, D.
err分享
err收藏
DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2017-07-01
err25
PREAI
errMurugapandiyan, P.; Ravimaran, S.; William, J.
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
J
J. Ajayan
H 指数: 32 · 论文数: 236
D
D. Nirmal
H 指数: 32 · 论文数: 200
P
P. Murugapandiyan
H 指数: 15 · 论文数: 61
K
K. Meenakshi Sundaram
H 指数: 14 · 论文数: 66
S
S. Ravimaran
H 指数: 8 · 论文数: 42
已加载全部