Jean‐François de Marneffe

imec

22H指数

201论文数

1.6K被引数

收录论文 20

发表时间

Atomic Layer Etching of Nickel Using N2/H2 Plasma Exposure and Hexafluoroacetylacetone 采用N2/H2等离子体暴露和六氟乙酰丙酮的镍原子层刻蚀

ACS Applied Electronic Materials

IF4.7

2026-04-24

PREAI

Ali Mohamed Ali; Guillaume Krieger; Jean-Philippe Soulié; Harm C. M. Knoops; Wilhelmus M. M. Kessels; Stefan De Gendt; Souvik Kundu; Jean-François de Marneffe

A dry-wet quasi-ALE approach for transition metals: tungsten as a model system 一种干湿准ALE方法用于过渡金属：以钨为模型系统

Applied Surface Science

IF6.9

2025-10-24

OAAI

Cinzia Chan; Jean-François de Marneffe; Christopher Gort; Jill Serron; Marta Agati; Felix Seidel; Jan P. Hofmann; Stefan De Gendt; Dennis H. van Dorp

Quantified Uniformity and Selectivity of TiO2 Films in 45-nm Half Pitch Patterns Using Area-Selective Deposition Supercycles

ADVANCED MATERIALS INTERFACES

IF4.4

2023-06-17

OAAI

Nye, Rachel A. A.; Van Dongen, Kaat; de Marneffe, Jean-Francois; Parsons, Gregory N. N.; Delabie, Annelies

Enhancing interface doping in graphene-metal hybrid devices using H2 plasma clean

APPLIED SURFACE SCIENCE

IF6.9

2021-02-01

PREAI

Achra, Swati; Akimoto, Tomoki; de Marneffe, Jean-Francois; Sergeant, Stefanie; Wu, Xiangyu; Nuytten, Thomas; Brems, Steven; Asselberghs, Inge; Tokei, Zsolt; Ueno, Kazuyoshi; Heyns, Marc

Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2021-01-28

OAAI

Marinov, Daniil; de Marneffe, Jean-Francois; Smets, Quentin; Arutchelvan, Goutham; Bal, Kristof M.; Voronina, Ekaterina; Rakhimova, Tatyana; Mankelevich, Yuri; El Kazzi, Salim; Nalin Mehta, Ankit; Wyndaele, Pieter-Jan; Heyne, Markus Hartmut; Zhang, Jianran; With, Patrick C.; Banerjee, Sreetama; Neyts, Erik C.; Asselberghs, Inge; Lin, Dennis; De Gendt, Stefan

Use Of-Thermally Degradable Chemical Vapor Deposited Polymer* Film for Low Damage Plasma Processing of Highly Porous Dielectrics

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2019-11-19

PREAI

de Marneffe, Jean-Francois; Yamaguchi, Tatsuya; Fujikawa, Makoto; Reziranov, Askar; Chanson, Romain; Zhang, Jianran; el Otell, Ziad; Babaei-Gavan, Khashayar; Nozawa, Syuji; Kikuchi, Yuki; Maekawa, Kaoru

Metal barrier induced damage in self-assembly based organosilica low-k dielectrics and its reduction by organic template residues

APPLIED SURFACE SCIENCE

IF6.9

2019-08-01

PREAI

Krishtab, M.; De Marneffe, J-F; Armini, S.; Meersschaut, J.; Benders, H.; Wilson, C.; De Gendt, S.

Area selective grafting of siloxane molecules on low-k dielectric with respect to copper surface

APPLIED SURFACE SCIENCE

IF6.9

2019-05-01

PREAI

Rezvanov, A.; Gornev, E. S.; de Marneffe, J-F; Armini, S.

Conversion of a Patterned Organic Resist into a High Performance Inorganic Hard Mask for High Resolution Pattern Transfer

ACS NANO

IF16

2018-10-12

PREAI

de Marneffe, Jean-Francois; Chan, Boon Teik; Spieser, Martin; Vereecke, Guy; Naumov, Sergej; Vanhaeren, Danielle; Wolf, Heiko; Knoll, Armin W.

The conversion mechanism of amorphous silicon to stoichiometric WS2

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2018-01-01

OAAI

Heyne, Markus H.; de Marneffe, Jean-Francois; Nuytten, Thomas; Meersschaut, Johan; Conard, Thierry; Caymax, Matty; Radu, Iuliana; Delabie, Annelies; Neyts, Erik C.; De Gendt, Stefan

Mechanisms for plasma cryogenic etching of porous materials

APPLIED PHYSICS LETTERS

IF3.6

2017-10-26

OAAI

Zhang, Quan-Zhi; Tinck, Stefan; de Marneffe, Jean-Francois; Zhang, Liping; Bogaerts, Annemie

Cu passivation for integration of gap-filling ultralow-k dielectrics

APPLIED PHYSICS LETTERS

IF3.6

2016-12-05

PREAI

Zhang, Liping; de Marneffe, Jean-Francois; Lesniewska, Alicja; Verdonck, Patrick; Heylen, Nancy; Murdoch, Gayle; Croes, Kristof; Boemmels, Juergen; Tokei, Zsolt; De Gendt, Stefan; Baklanov, Mikhail R.

Integration of porous low-k dielectrics using post porosity pore protection

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-11-17

PREAI

Zhang, Liping; de Marneffe, Jean-Francois; Verdonck, Patrick; Heylen, Nancy; Wen, Liang Gong; Wilson, Chris; Tokei, Zsolt; Boemmels, Juergen; De Gendt, Stefan; Baklanov, Mikhail R.

Comparison of vacuum ultra-violet emission of Ar/CF4 and Ar/CF3I capacitively coupled plasmas

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2016-07-19

PREAI

Zotovich, A.; Proshina, O.; el Otell, Z.; Lopaev, D.; Rakhimova, T.; Rakhimov, A.; de Marneffe, J-F; Baklanov, M. R.

Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-04-01

PREAI

Zhang, Liping; de Marneffe, Jean-Francois; Leroy, Floriane; Lefaucheux, Philippe; Tillocher, Thomas; Dussart, Remi; Maekawa, Kaoru; Yatsuda, Koichi; Dussarrat, Christian; Goodyear, Andy; Cooke, Mike; De Gendt, Stefan; Baklanov, Mikhail R.

Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-09-30

PREAI

Leroy, F.; Zhang, L.; Tillocher, T.; Yatsuda, K.; Maekawa, K.; Nishimura, E.; Lefaucheux, P.; de Marneffe, J-F; Baklanov, M. R.; Dussart, R.

Vacuum ultra-violet emission of CF4 and CF3I containing plasmas and Their effect on low-k materials

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-09-10

PREAI

el Otell, Z.; Samara, V.; Zotovich, A.; Hansen, T.; de Marneffe, J-F; Baklanov, M. R.

Experimental and theoretical study of RF capacitively coupled plasma in Ar-CF4-CF3I mixtures

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2015-08-18

PREAI

Proshina, O. V.; Rakhimova, T. V.; Lopaev, D. V.; Samara, V.; Baklanov, M. R.; de Marneffe, J-F

Development of a novel wafer-probe for in situ measurements of thin film properties

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2015-05-19

PREAI

el Otell, Z.; Marinov, D.; Samara, V.; Bowden, M. D.; De Marneffe, J-F; Verdonck, P.; Braithwaite, N. St J.

A dc-pulsed capacitively coupled planar Langmuir probe for plasma process diagnostics and monitoring

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2012-10-23

PREAI

Samara, V.; Booth, J-P; de Marneffe, J-F; Milenin, A. P.; Brouri, M.; Boullart, W.

研究方向