Makoto Kasu - Publications, H-index & Citations

Makoto Kasu

saga university

49H指数

333论文数

9.7K被引数

收录论文 42

发表时间

High power gain cut-off frequency (fMAX) > 120 GHz of a 157 nm T-shaped gated diamond MOSFET with NO2 p-type doping 具有NO2 p型掺杂的157 nm T型栅极金刚石MOSFET的高功率增益截止频率(fMAX) > 120 GHz

Japanese Journal of Applied Physics

IF1.8

2025-12-01

PREAI

Saha, Niloy Chandra; Eguchi, Masanori; Muta, Yoshiki; Oishi, Toshiyuki; Tomiki, Atsushi; Kasu, Makoto

(100) Microcracks induced by (1 ± 11) stacking faults in halide vapor deposited (001) β-Ga2O3: Origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron x-ray topography (100) 卤化物气相沉积法制备的(001) β-Ga2O3中由(1 ± 11)堆垛层错引起的微裂纹：通过高灵敏度发射显微镜和同步辐射X射线形貌术观察到的肖特基势垒二极管的反向漏电流起源

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-11-14

PREAI

Eguchi, Masanori; Sato, Makoto; Saha, Niloy Chandra; Oishi, Toshiyuki; Rao, Badari Narayana; Lin, Chia-Hung; Sasaki, Kohei; Kasu, Makoto

Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

APPLIED PHYSICS LETTERS

IF3.6

2023-09-18

PREAI

Sdoeung, Sayleap; Otsubo, Yuto; Sasaki, Kohei; Kuramata, Akito; Kasu, Makoto

Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

APPLIED PHYSICS LETTERS

IF3.6

2022-03-23

PREAI

Sdoeung, Sayleap; Sasaki, Kohei; Kawasaki, Katsumi; Hirabayashi, Jun; Kuramata, Akito; Oishi, Toshiyuki; Kasu, Makoto

Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

APPLIED PHYSICS LETTERS

IF3.6

2022-02-28

PREAI

Sdoeung, Sayleap; Sasaki, Kohei; Kawasaki, Katsumi; Hirabayashi, Jun; Kuramata, Akito; Kasu, Makoto

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

ADVANCED MATERIALS

IF26.8

2021-09-09

OAAI

Liang, Jianbo; Kobayashi, Ayaka; Shimizu, Yasuo; Ohno, Yutaka; Kim, Seong-Woo; Koyama, Koji; Kasu, Makoto; Nagai, Yasuyoshi; Shigekawa, Naoteru

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

APPLIED PHYSICS LETTERS

IF3.6

2021-04-29

PREAI

Sdoeung, Sayleap; Sasaki, Kohei; Masuya, Satoshi; Kawasaki, Katsumi; Hirabayashi, Jun; Kuramata, Akito; Kasu, Makoto

Evolution of defects, morphologies and fundamental growth characteristics of CVD diamond films induced by nitrogen addition

MATERIALS TODAY COMMUNICATIONS

IF4.5

2020-12-01

PREAI

Wu, Gai; Wang, Qijun; Wu, Yanxue; Sun, Xiang; Liao, Jia; Pan, Junheng; Chen, Meihua; Kasu, Makoto; Liu, Sheng

Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (1120) sapphire substrate

APPLIED PHYSICS LETTERS

IF3.6

2020-11-16

PREAI

Kim, Seong-Woo; Kawamata, Yuki; Takaya, Ryota; Koyama, Koji; Kasu, Makoto

Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy

APPLIED PHYSICS LETTERS

IF3.6

2020-07-15

PREAI

Sdoeung, Sayleap; Sasaki, Kohei; Kawasaki, Katsumi; Hirabayashi, Jun; Kuramata, Akito; Oishi, Toshiyuki; Kasu, Makoto

Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

APL MATERIALS

IF4.5

2018-12-10

OAAI

Oshima, Y.; Kawara, K.; Shinohe, T.; Hitora, T.; Kasu, M.; Fujita, S.

Realization of direct bonding of single crystal diamond and Si substrates

APPLIED PHYSICS LETTERS

IF3.6

2017-03-16

OAAI

Liang, Jianbo; Masuya, Satoshi; Kasu, Makoto; Shigekawa, Naoteru

Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2014-02-18

PREAI

Takahashi, Kazutoshi; Imamura, Masaki; Hirama, Kazuyuki; Kasu, Makoto

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

APPLIED PHYSICS LETTERS

IF3.6

2011-12-22

147

PREAI

Taniyasu, Yoshitaka; Kasu, Makoto

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

APPLIED PHYSICS LETTERS

IF3.6

2011-10-12

PREAI

Kamiya, Katsumasa; Ebihara, Yasuhiro; Shiraishi, Kenji; Kasu, Makoto

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2011-04-22

PREAI

Hirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto

Origin of exciton emissions from an AlN p-n junction light-emitting diode

APPLIED PHYSICS LETTERS

IF3.6

2011-03-31

PREAI

Taniyasu, Yoshitaka; Kasu, Makoto

Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes

APPLIED PHYSICS LETTERS

IF3.6

2011-01-05

PREAI

Hirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto

Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2010-10-05

PREAI

Akasaka, Tetsuya; Kobayashi, Yasuyuki; Kasu, Makoto

Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation

APPLIED PHYSICS LETTERS

IF3.6

2010-06-04

110

PREAI

Taniyasu, Yoshitaka; Kasu, Makoto

研究方向