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M

M. J. Yang

Huainan Normal University

27H指数
86论文数
2.5K被引数
收录论文 21
发表时间
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Enhanced Thermoelectric Performance of SnTe via Introducing Resonant Levels
errMOLECULES
IF4.6
err2024-10-21
err1
errOAAI
errYang, Manman; Jia, Jin; Yu, Haijun; Li, Yimin; Han, Lu; Sun, Hairui; Jia, Haowen; Zhu, Yuanyuan
err分享
err收藏
Optimizing Thermoelectric Performance of Tellurium via Doping with Antimony and Selenium
errMOLECULES
IF4.6
err2023-10-26
err5
errOAAI
errYang, Manman; Yang, Mengxiang; Li, Yimin; Chen, Yuqi; Song, Yuling; Jia, Jin; Su, Taichao
err分享
err收藏
Quantum steering of electron wave function in an InAs Y-branch switch -: art. no. 073117
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-02-11
err19
errOAAI
errJones, GM; Yang, CH; Yang, MJ; Lyanda-Geller, YB
err分享
err收藏
Low-frequency noise in AlSb/InAs high-electron-mobility transistor structure as a function of temperature and illumination
errAPPLIED PHYSICS LETTERS
IF3.6
err2004-08-02
err15
PREAI
errKruppa, W; Yang, MJ; Bennett, BR; Boos, JB
err分享
err收藏
Characterization of one-dimensional quantum channels in InAs/AlSb
errPHYSICAL REVIEW B
IF3.7
err2002-09-06
err18
errOAAI
errYang, CH; Yang, MJ; Cheng, KA; Culbertson, JC
err分享
err收藏
A nanofabrication scheme for InAs/AlSb heterostructures
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-02-18
err21
PREAI
errYang, MJ; Cheng, KA; Yang, CH; Culbertson, JC
err分享
err收藏
Microscopic characterization of InAs/In0.28GaSb0.72/InAs/AlSb laser structure interfaces -: art. no. 245311
errPHYSICAL REVIEW B
IF3.7
err2001-06-04
err27
PREAI
errBarvosa-Carter, W; Twigg, ME; Yang, MJ; Whitman, LJ
err分享
err收藏
Type-II antimonide quantum wells for mid-infrared lasers
errOPTICAL MATERIALS
IF4.2
err2001-06-01
err4
PREAI
errYang, MJ; Meyer, JR; Bewley, WW; Felix, CL; Vurgaftman, I; Barvosa-Carter, W; Whitman, LJ; Bartolo, RE; Stokes, DW; Lee, H; Martinelli, RU
err分享
err收藏
Nanometer-scale quantum channels defined by reactive ion etching in InAs/AlSb heterojunctions
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-10-30
err6
PREAI
errCheng, KA; Yang, CH; Yang, MJ
err分享
err收藏
Suppression of Auger recombination in long-wavelength quantum well W-structure lasers
errPHYSICAL REVIEW B
IF3.7
err2000-10-15
err5
errOAAI
errFindlay, PC; Wells, JPR; Bradley, IV; Crowder, JG; Pidgeon, CR; Murdin, BN; Yang, MJ; Vurgaftman, I; Meyer, JR
err分享
err收藏
Mid-infrared angled-grating distributed feedback laser
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-05-29
err46
PREAI
errBartolo, RE; Bewley, WW; Vurgaftman, I; Felix, CL; Meyer, JR; Yang, MJ
err分享
err收藏
Magnetocapacitance and far-infrared photoconductivity in GaSb/InAs composite quantum wells
errPHYSICAL REVIEW B
IF3.7
err1999-11-15
err13
PREAI
errYang, MJ; Yang, CH; Bennett, BR
err分享
err收藏
High-efficiency midinfrared W laser with optical pumping injection cavity
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-11-08
err36
PREAI
errFelix, CL; Bewley, WW; Vurgaftman, I; Olafsen, LJ; Stokes, DW; Meyer, JR; Yang, MJ
err分享
err收藏
High-temperature continuous-wave 3-6.1 μm W'' lasers with diamond-pressure-bond heat sinking
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-02-22
err102
PREAI
errBewley, WW; Felix, CL; Vurgaftman, I; Stokes, DW; Aifer, EH; Olafsen, LJ; Meyer, JR; Yang, MJ; Shanabrook, BV; Lee, H; Martinelli, RU; Sugg, AR
err分享
err收藏
Above-room-temperature optically pumped midinfrared W lasers
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-12-28
err76
PREAI
errBewley, WW; Felix, CL; Aifer, EH; Vurgaftman, I; Olafsen, LJ; Meyer, JR; Lee, H; Martinelli, RU; Connolly, JC; Sugg, AR; Olsen, GH; Yang, MJ; Bennett, BR; Shanabrook, BV
err分享
err收藏
Auger coefficients in type-II InAs/Ga1-xInxSb quantum wells
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-11-16
err144
PREAI
errMeyer, JR; Felix, CL; Bewley, WW; Vurgaftman, I; Aifer, EH; Olafsen, LJ; Lindle, JR; Hoffman, CA; Yang, MJ; Bennett, BR; Shanabrook, BV; Lee, H; Lin, CH; Pei, SS; Miles, RH
err分享
err收藏
Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-03-09
err32
PREAI
errBennett, BR; Yang, MJ; Shanabrook, BV; Boos, JB; Park, D
err分享
err收藏
The ultimate scaling limit of semiconductor-based transistors
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err1997-10-01
err3
PREAI
errZhang, WE; Wang, FC; Yang, CH; Yang, MJ
err分享
err收藏
A tunneling field-effect transistor with 25 nm metallurgical channel length
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-06-02
err8
PREAI
errWang, FC; Zhang, WE; Yang, CH; Yang, MJ; Bennett, BR; Wilson, RA; Stone, DR
err分享
err收藏
Observation of electrically resettable negative persistent photoconductivity in InAs/AlSb single quantum wells
errAPPLIED PHYSICS LETTERS
IF3.6
err1996-09-02
err30
PREAI
errWang, FC; Zhang, WE; Yang, CH; Yang, MJ; Bennett, BR
err分享
err收藏

研究方向

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合作学者
合作期刊
李益民 封面图
李益民 (Yimin Li)
H 指数: 62 · 论文数: 693
I
I. Vurgaftman
H 指数: 56 · 论文数: 638
L
L. J. Whitman
H 指数: 47 · 论文数: 187
B
B. V. Shanabrook
H 指数: 44 · 论文数: 245
B
B. R. Bennett
H 指数: 44 · 论文数: 335
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