B. R. Bennett - Publications, H-index & Citations

B. R. Bennett

United States Department of Defense

44H指数

335论文数

1.1W被引数

收录论文 46

发表时间

Illustration of an object-based approach to identify structural differences in tropical cyclone wind fields

QUARTERLY JOURNAL OF THE ROYAL METEOROLOGICAL SOCIETY

IF2.9

2022-07-04

OAAI

Zick, Stephanie; Matyas, Corene; Lackmann, Gary; Tang, Jingyin; Bennett, Brian

High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness

APPLIED PHYSICS LETTERS

IF3.6

2014-12-02

PREAI

Barth, Michael; Rayner, G. Bruce, Jr.; McDonnell, Stephen; Wallace, Robert M.; Bennett, Brian R.; Engel-Herbert, Roman; Datta, Suman

Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition 原子层沉积前原位氢等离子体预处理对GaSb原生氧化物还原的影响

APPLIED SURFACE SCIENCE

IF6.9

2013-07-01

PREAI

Cleveland, Erin R.; Ruppalt, Laura B.; Bennett, Brian R.; Prokes, S. M.

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

APPLIED PHYSICS LETTERS

IF3.6

2012-12-03

PREAI

Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Boos, J. Brad; Park, Doewon; Bennett, Brian R.

Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-04-02

PREAI

Yuan, Ze; Nainani, Aneesh; Bennett, Brian R.; Boos, J. Brad; Ancona, Mario G.; Saraswat, Krishna C.

Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-02-04

OAAI

Xia, Ling; Boos, J. Brad; Bennett, Brian R.; Ancona, Mario G.; del Alamo, Jesus A.

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

MRS BULLETIN

IF4.9

2011-01-31

PREAI

Bennett, Brian R.; Ancona, Mario G.; Boos, J. Brad

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

APPLIED PHYSICS LETTERS

IF3.6

2010-10-04

114

OAAI

Ali, A.; Madan, H. S.; Kirk, A. P.; Zhao, D. A.; Mourey, D. A.; Hudait, M. K.; Wallace, R. M.; Jackson, T. N.; Bennett, B. R.; Boos, J. B.; Datta, S.

Antimonide-based diodes for terahertz mixers

APPLIED PHYSICS LETTERS

IF3.6

2008-06-17

PREAI

Magno, R.; Champlain, J. G.; Newman, H. S.; Ancona, M. G.; Culbertson, J. C.; Bennett, B. R.; Boos, J. B.; Park, D.

Modified active site coordination in a clinical mutant of sulfite oxidase (Vol 129, pg 9421, 2008)

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2008-04-18

OAAI

Doonan, Christian J.; Wilson, Heather L.; Rajagopalan, K. V.; Garrett, Robert M.; Bennett, Brian; Prince, Roger C.; George, Graham N.

Mobility enhancement in strained p-InGaSb quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2007-07-25

102

PREAI

Bennett, Brian R.; Ancona, Mario G.; Brad Boos, J.; Shanabrook, Benjamin V.

Band anticrossing in GaNxSb1-x

APPLIED PHYSICS LETTERS

IF3.6

2006-09-15

OAAI

Jefferson, P. H.; Veal, T. D.; Piper, L. F. J.; Bennett, B. R.; McConville, C. F.; Murdin, B. N.; Buckle, L.; Smith, G. W.; Ashley, T.

InAs HEMT narrowband amplifier with ultra-low power dissipation

ELECTRONICS LETTERS

IF0.8

2006-06-08

PREAI

Kruppa, W.; Boos, J. B.; Bennett, B. R.; Papanicolaou, N. A.; Park, D.; Bass, R.

High radiation tolerance of InAs/AlSb high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2005-10-18

PREAI

Weaver, BD; Boos, JB; Papanicolaou, NA; Bennett, BR; Park, D; Bass, R

Band gap reduction in GaNSb alloys due to the anion mismatch

APPLIED PHYSICS LETTERS

IF3.6

2005-09-19

OAAI

Veal, TD; Piper, LFJ; Jollands, S; Bennett, BR; Jefferson, PH; Thomas, PA; McConville, CF; Murdin, BN; Buckle, L; Smith, GW; Ashley, T

Characterization of single magnetic particles with InAs quantum-well Hall devices

APPLIED PHYSICS LETTERS

IF3.6

2004-11-15

PREAI

Landry, G; Miller, MM; Bennett, BR; Johnson, M; Smolyaninova, V

Sulfur passivation for shallow Pd/W/Au ohmic contacts to p-InGaSb

APPLIED PHYSICS LETTERS

IF3.6

2004-10-18

PREAI

Wang, SH; Mohney, SE; Robinson, JA; Bennett, BR

Low-frequency noise in AlSb/InAs high-electron-mobility transistor structure as a function of temperature and illumination

APPLIED PHYSICS LETTERS

IF3.6

2004-08-02

PREAI

Kruppa, W; Yang, MJ; Bennett, BR; Boos, JB

Magnetotunneling between two-dimensional electron gases in InAs-AlSb-GaSb heterostructures -: art. no. 035311

PHYSICAL REVIEW B

IF3.7

2003-07-11

OAAI

Lin, Y; González, EM; Mendez, EE; Magno, R; Bennett, BR; Bracker, AS

Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff

APPLIED PHYSICS LETTERS

IF3.6

2003-06-23

PREAI

Aifer, EH; Jackson, EM; Boishin, G; Whitman, LJ; Vurgaftman, I; Meyer, JR; Culbertson, JC; Bennett, BR

研究方向