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J

Jiamang Che

hebei university of technology

H指数:12

被引数:676

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Local dielectric tunnel junction to manage the current distribution for AlGaN-based deep-ultraviolet light-emitting diodes with a thin p-GaN layer

IF3.3

2022-07-083

PRE

Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p+-GaN/SiO2/ITO tunnel junction

IF3.3

2022-02-033

PRE

Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?

IF3.3

2021-08-3026

OA

Polarization assisted self-powered GaN-based UV photodetector with high responsivity

PHOTONICS RESEARCH

IF7.2

2021-04-2646

PRE

Polarization-enhanced AlGaN solar-blind ultraviolet detectors

PHOTONICS RESEARCH

IF7.2

2020-07-0140

PRE

Metal-insulator-semiconductor structure for deep-ultraviolet light-emitting diodes to increase the electron injection in the cathode region

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2020-04-013

PREAI

Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

通过局部调制基于AlGaN的深紫外发光二极管的n-algan层中的掺杂类型来改善电流扩展

NANOSCALE RESEARCH LETTERS

IF4.1

2019-08-066

OAAI

Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes

IF3.3

2019-05-01135

OA

On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer

IF3.3

2019-05-0190

OA

Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

PHOTONICS RESEARCH

IF7.2

2019-03-2264

PRE

On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes

IF2.8

2019-01-015

PRE

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes

在用于AlGaN基深紫外发光二极管的p-algan/n-algan/p-algan电流扩展层上

NANOSCALE RESEARCH LETTERS

IF4.1

2018-11-0826

OAAI

On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-10-0114

PREAI