Yonghui Zhang

hebei university of technology

H指数:29

被引数:3,578

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Dual–Functional Ultra–Wide Bandgap AlGaN Material for Making Electrically Self–Protective Deep–Ultraviolet Optoelectronic Devices With Improved Frequency Responsivity

双功能超宽禁带AlGaN材料用于制造具有改进频率响应特性的电学自保护深紫外光电器件

Laser & Photonics Reviews

IF10

2026-06-270

PRE

The Influence of Series Chip Number on the Performance of High-Voltage Deep-Ultraviolet LED With a Long Stripe Array

串联芯片数量对长条形阵列高电压深紫外LED性能的影响

IEEE Transactions on Electron Devices

IF3.2

2026-05-270

PRE

Pt1/MnO2 Nanotip Inducing Local Electric Field Intensifies Oxygen Transport for High-Energy-Density Al-Air Battery Stacks

Pt1/MnO2纳米尖端诱导的局部电场增强了高能量密度Al-空气电池堆的氧气传输

Advanced Materials

IF26.8

2026-03-060

PRE

A three-dimensional liquid pump generator for energy transfer and wireless sensing

用于能量传输和无线传感的三维液体泵发电机

Chemical Engineering Journal

IF13.2

2026-03-030

PRE

The origin of the limited impact of an inclined sidewall Al reflector on the light output power of mid-power deep ultraviolet light-emitting diodes

Physica Scripta

IF2.6

2026-01-150

PRE

Enhancing the light output power of deep ultraviolet light-emitting diodes with a ultra-thin p-type layer through etching non-ohmic contact p-GaN region

通过刻蚀非欧姆接触的p-GaN区域，利用超薄p型层增强深紫外发光二极管的光输出功率

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-10-140

The effect of mesa length-width aspect ratio on the thermal performance of deep ultraviolet flip-chip micro-light-emitting diodes

台面长宽比对深紫外倒装微发光二极管热性能的影响

Physica Scripta

IF2.6

2025-09-170

PRE

Constructing multishelled ZnO/ZnCo2O4 hollow polyhedrons as a sensing material for efficient acetone detection

构建多壳层ZnO/ZnCo2O4空心多面体作为高效丙酮检测的传感材料

Micro and Nanostructures

IF3

2025-08-060

PRE

On the physical models for 7.2 kV AlGaN/GaN SBDs with dual gates: polarization gate and common-connected grooved-gate/anode architecture to suppress leakage current and reduce dynamic resistance

关于7.2 kV AlGaN/GaN肖特基势垒二极管（SBD）的双栅物理模型：采用极化栅和共连接的槽栅/阳极结构以抑制漏电流和降低动态电阻

PHYSICA SCRIPTA

IF2.6

2025-04-080

PRE

Physical Model Development for Fabricating MIS-Anode-Based 1100 V AlGaN/GaN-Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current

基于硅衬底的MIS阳极结构1100 V AlGaN/GaN横向肖特基势垒二极管低漏电流制备的物理模型开发

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-04-010

OAAI

Advancements in biocompatible polymer-based antifouling coatings

生物相容性聚合物基防污涂料的进展

MATERIALS TODAY COMMUNICATIONS

IF4.5

2025-03-010

PRE

Broadband sound reduction in space-coiling ventilation structures with microperforated shells

APPLIED ACOUSTICS

IF3.6

2025-03-010

PRE

Experimental study on the mechanism of cold plasma assisted micro-milling of titanium, molybdenum, and nickel

SURFACES AND INTERFACES

IF6.3

2025-03-010

PRE

Physical models and numerical modeling for 280 nm AlGaN-based emission-and-detection dual functional integrated devices by managing hole transport and recombination

OPTICS EXPRESS

IF3.3

2025-02-280

Post-removal for the deposited Au metal to increase the light extraction efficiency for AlGaN-based deep-ultraviolet light-emitting diodes

OPTICS LETTERS

IF3.3

2025-01-270

PRE

Amorphous Ga2O3 Semiconductor: A New Solution for Robust X-Ray Dosimeters

非晶Ga2O3半导体：一种新型X射线剂量计的可靠解决方案

ADVANCED FUNCTIONAL MATERIALS

IF19

2025-01-120

PRE

High-performance visible-to-near infrared phototransistor based on SnSe/SnS2 van der Waals heterostructure

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-010

PRE

Effect of the self-aligned etching thin p-GaN layer on the performance of AlGaN-based DUV LEDs with various chip sizes

OPTICS EXPRESS

IF3.3

2024-11-270

Size-dependent competitive effect between surface recombination and self-heat on efficiency droop for 250 nm AlGaN-based DUV LEDs

OPTICS LETTERS

IF3.3

2024-11-042

PRE

Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer

OPTICS LETTERS

IF3.3

2024-07-290

PRE

Yonghui Zhang

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