Kangkai Tian

chinese academy of sciences

H指数:23

被引数:1,605

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

The Influence of Series Chip Number on the Performance of High-Voltage Deep-Ultraviolet LED With a Long Stripe Array

串联芯片数量对长条形阵列高电压深紫外LED性能的影响

IEEE Transactions on Electron Devices

IF3.2

2026-05-270

PRE

Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission

通过激发极化门光晶体管使紫外光可见，以实现向GaN基蓝光发射的能量转移

light: science & applications

IF0

2026-03-100

OAAI

Numerically Investigate Al0.78Ga0.22N/Al0.72Ga0.28N/Al0.78Ga0.22N p-Electron Blocking Layer to Manipulate the Carrier Transport for AlGaN-based Deep-Ultraviolet Fabry-Pérot Laser Diodes

数值研究Al₀.₇₈Ga₀.₂₂N/Al₀.₇₂Ga₀.₂₈N/Al₀.₇₈Ga₀.₂₂N p-电子阻挡层对AlGaN基深紫外法布里-珀罗激光二极管载流子输运的调控

Physica Status Solidi A-Applications and Materials Science

IF1.9

2025-12-010

PRE

Enhancing light extraction for AlGaN-based deep-ultraviolet LEDs using scattering nanostructures on both scribe line and inclined sidewall

通过在划线区域和倾斜侧壁上使用散射纳米结构来增强AlGaN基深紫外LED的光提取

Optics & Laser Technology

IF0

2025-11-260

PRE

The effect of mesa length-width aspect ratio on the thermal performance of deep ultraviolet flip-chip micro-light-emitting diodes

台面长宽比对深紫外倒装微发光二极管热性能的影响

Physica Scripta

IF2.6

2025-09-170

PRE

On the physical models for 7.2 kV AlGaN/GaN SBDs with dual gates: polarization gate and common-connected grooved-gate/anode architecture to suppress leakage current and reduce dynamic resistance

关于7.2 kV AlGaN/GaN肖特基势垒二极管（SBD）的双栅物理模型：采用极化栅和共连接的槽栅/阳极结构以抑制漏电流和降低动态电阻

PHYSICA SCRIPTA

IF2.6

2025-04-080

PRE

Physical Model Development for Fabricating MIS-Anode-Based 1100 V AlGaN/GaN-Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current

基于硅衬底的MIS阳极结构1100 V AlGaN/GaN横向肖特基势垒二极管低漏电流制备的物理模型开发

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-04-010

OAAI

Physical models and numerical modeling for 280 nm AlGaN-based emission-and-detection dual functional integrated devices by managing hole transport and recombination

OPTICS EXPRESS

IF3.3

2025-02-280

Post-removal for the deposited Au metal to increase the light extraction efficiency for AlGaN-based deep-ultraviolet light-emitting diodes

OPTICS LETTERS

IF3.3

2025-01-270

PRE

Effect of the self-aligned etching thin p-GaN layer on the performance of AlGaN-based DUV LEDs with various chip sizes

OPTICS EXPRESS

IF3.3

2024-11-270

Size-dependent competitive effect between surface recombination and self-heat on efficiency droop for 250 nm AlGaN-based DUV LEDs

OPTICS LETTERS

IF3.3

2024-11-042

PRE

Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer

OPTICS LETTERS

IF3.3

2024-07-290

PRE

On the origin of the enhanced light extraction efficiency of DUV LED by using inclined sidewalls

OPTICS LETTERS

IF3.3

2024-05-312

PRE

Enhancing light extraction efficiency of the inclined-sidewall-shaped DUV micro-LED array by hybridizing a nanopatterned sapphire substrate and an air-cavity reflector

OPTICS EXPRESS

IF3.3

2024-04-082

1.43 kV GaN-based MIS Schottky barrier diodes

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-02-094

PRE

Fabricating and investigating a beveled mesa with a specific inclination angle to improve electrical and optical performances for GaN-based micro-light-emitting diodes

OPTICS LETTERS

IF3.3

2023-11-033

PRE

Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over- etched p-GaN layer at the top of truncated cones

OPTICS EXPRESS

IF3.3

2021-09-0723

Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?

OPTICS EXPRESS

IF3.3

2021-08-3026

Polarization assisted self-powered GaN-based UV photodetector with high responsivity

PHOTONICS RESEARCH

IF7.2

2021-04-2646

PRE

A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-01-2958

PRE

Kangkai Tian

个人简介

教育背景

工作经历

荣誉奖项

研究方向