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M

M. Niwa

University of Tokyo

30H指数
268论文数
3.1K被引数
收录论文 26
发表时间
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Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories
err2013-08-29
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PREAI
errYang, Moon Young; Kamiya, Katsumasa; Magyari-Koepe, Blanka; Niwa, Masaaki; Nishi, Yoshio; Shiraishi, Kenji
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Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories
err2013-04-08
err57
PREAI
errKamiya, Katsumasa; Yang, Moon Young; Nagata, Takahiro; Park, Seong-Geon; Magyari-Koepe, Blanka; Chikyow, Toyohiro; Yamada, Keisaku; Niwa, Masaaki; Nishi, Yoshio; Shiraishi, Kenji
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ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels
err2012-02-13
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PREAI
errKamiya, Katsumasa; Yang, Moon Young; Park, Seong-Geon; Magyari-Koepe, Blanka; Nishi, Yoshio; Niwa, Masaaki; Shiraishi, Kenji
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Acidity and catalytic activity of mesoporous ZSM-5 in comparison with zeolite ZSM-5, Al-MCM-41 and silica-alumina
err2008-03-01
err110
PREAI
errSuzuki, K.; Aoyagi, Y.; Katada, N.; Choi, M.; Ryoo, R.; Niwa, M.
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Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate dielectrics on Si
err2004-12-13
err30
PREAI
errOkabayashi, J; Toyoda, S; Kumigashira, H; Oshima, M; Usuda, K; Niwa, M; Liu, GL
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Application of neural network to estimation of catalyst deactivation in methanol conversion
err2004-10-01
err23
PREAI
errKito, S; Satsuma, A; Ishikura, T; Niwa, M; Murakami, Y; Hattori, I
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Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors
err2004-07-19
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PREAI
errFujioka, H; Sekiya, T; Kuzuoka, Y; Oshima, M; Usuda, H; Hirashita, N; Niwa, M
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Effects of interlayer and annealing on chemical states of HfO2 gate insulators studied by photoemission spectroscopy
err2004-03-29
err54
PREAI
errToyoda, S; Okabayashi, J; Kumigashira, H; Oshima, M; Ono, K; Niwa, M; Usuda, K; Liu, GL
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Effect of nitrogen doping into SiO2 studied by photoemission spectroscopy
err2003-12-29
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PREAI
errToyoda, S; Okabayashi, J; Kumigashira, H; Oshima, M; Ono, K; Niwa, M; Usuda, K; Hirashita, N
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Chemistry and band offsets of HfO2 thin films for gate insulators
err2003-09-15
err71
PREAI
errOshima, M; Toyoda, S; Okumura, T; Okabayashi, J; Kumigashira, H; Ono, K; Niwa, M; Usuda, K; Hirashita, N
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Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal
err2003-09-15
err70
PREAI
errYamamoto, K; Hayashi, S; Niwa, M; Asai, M; Horii, S; Miya, H
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Comparison of thermal and plasma oxidations for HfO2/Si interface
err2003-06-01
err15
PREAI
errHayashi, S; Yamamoto, K; Harada, Y; Mitsuhashi, R; Eriguchi, K; Kubota, M; Niwa, M
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Interfacial chemistry and structures of ultrathin Si oxynitride films超薄Si氮氧化物薄膜的界面化学和结构
err2003-06-01
err17
PREAI
errOshima, M; Kimura, K; Ono, K; Horiba, K; Nakamura, K; Kumigashira, H; Oh, JH; Niwa, M; Usuda, K; Hirashita, N
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