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N. David Theodore

arizona state university-tempe

24H指数
169论文数
1.9K被引数
收录论文 22
发表时间
Is Ti contamination in Si wafer processing an issue?
err2019-12-06
err6
PREAI
errChang, LH; Cowden, WG; Christiansen, J; Werho, D; Theodore, ND
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Physical assembly of Ag nanocrystals on enclosed surfaces in monocrystalline Si
err2014-11-07
err11
errOAAI
errMartin, Michael S.; Theodore, N. David; Wei, Chao-Chen; Shao, Lin
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Effective dopant activation via low temperature microwave annealing of ion implanted silicon
err2013-11-04
err12
PREAI
errZhao, Zhao; Theodore, N. David; Vemuri, Rajitha N. P.; Das, Sayantan; Lu, Wei; Lau, S. S.; Alford, T. L.
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Nanometer-scale tunnel formation in metallic glass by helium ion irradiation
err2012-07-23
err14
PREAI
errShao, Lin; Gorman, Brian P.; Aitkaliyeva, Assel; Theodore, N. David; Xie, Guoqiang
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Assembly of phosphonic acids on GaN and AlGaN
err2009-12-07
err25
PREAI
errSimpkins, B. S.; Hong, S.; Stine, R.; Maekinen, A. J.; Theodore, N. D.; Mastro, M. A.; Eddy, C. R., Jr.; Pehrsson, P. E.
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Evidence for ion irradiation induced dissociation and reconstruction of Si-H bonds in hydrogen-implanted silicon
err2008-09-11
err21
errOAAI
errDi, Z. F.; Wang, Y. Q.; Nastasi, M.; Shao, L.; Lee, J. K.; Theodore, N. D.
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The role of strain in hydrogenation induced cracking in Si/Si1-xGex/Si structures
err2008-07-30
err7
PREAI
errShao, Lin; Di, Zengfeng; Lin, Yuan; Jia, Q. X.; Wang, Y. Q.; Nastasi, M.; Thompson, Phillip E.; Theodore, N. David; Chu, Paul K.
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Effects of hydrogen implantation temperature on InP surface blistering
err2008-05-19
err19
PREAI
errChen, Peng; Di, Zengfeng; Nastasi, M.; Bruno, Elena; Grimaldi, Maria Grazia; Theodore, N. David; Lau, S. S.
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Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures
err2008-02-12
err6
errOAAI
errShao, Lin; Wang, Y. Q.; Swadener, J. G.; Nastasi, M.; Thompson, Phillip E.; Theodore, N. David
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H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98B0.02/Si structures -: art. no. 021901
err2006-01-09
err13
errOAAI
errShao, L; Lin, Y; Swadener, JG; Lee, JK; Jia, QX; Wang, YQ; Nastasi, M; Thompson, PE; Theodore, ND; Alford, TL; Mayer, JW; Chen, P; Lau, SS
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Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness
err2005-12-12
err9
errOAAI
errShao, L; Lin, Y; Swadener, JG; Lee, JK; Jia, QX; Wang, YQ; Nastasi, M; Thompson, PE; Theodore, ND; Alford, TL; Mayer, JW; Chen, P; Lau, SS
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Microwave-cut silicon layer transfer
err2005-11-22
err14
PREAI
errThompson, DC; Alford, TL; Mayer, JW; Hochbauer, T; Nastasi, M; Lau, SS; Theodore, ND; Henttinen, K; Suni, I; Chu, PK
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A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis
err2005-09-19
err3
PREAI
errShao, L; Wang, YQ; Lee, JK; Nastasi, M; Thompson, PE; Theodore, ND; Mayer, JW
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Silicon layer transfer using plasma hydrogenation
err2005-09-08
err10
PREAI
errChen, P; Lau, SS; Chu, PK; Henttinen, K; Suni, T; Suni, I; Theodore, ND; Alford, TL; Mayer, JW; Shao, L; Nastasi, M
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Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation
err2005-08-22
err38
errOAAI
errShao, L; Lin, Y; Lee, JK; Jia, QX; Wang, YQ; Nastasi, M; Thompson, PE; Theodore, ND; Chu, PK; Alford, TL; Mayer, JW; Chen, P; Lau, SS
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Investigation of plasma hydrogenation and trapping mechanism for layer transfer -: art. no. 031904
err2005-01-07
err27
errOAAI
errChen, P; Chu, PK; Höchbauer, T; Lee, JK; Nastasi, M; Buca, D; Mantl, S; Loo, R; Caymax, M; Alford, T; Mayer, JW; Theodore, ND; Cai, M; Schmidt, B; Lau, SS
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Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer
err2004-11-22
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errOAAI
errChen, P; Chu, PK; Höchbauer, T; Nastasi, M; Buca, D; Mantl, S; Theodore, ND; Alford, TL; Mayer, JW; Loo, R; Caymax, M; Cai, M; Lau, SS
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Microstructure and stability of sputtered titanium aluminides on SiO2
err2004-02-01
err0
PREAI
errKim, HC; Theodore, ND; Gadre, KS; Alford, TL
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