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Microwave-cut silicon layer transfer
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DOI：10.1063/1.2135395.png)
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Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature. (c) 2005 American Institute of Physics.
Keyword:
SI
IMPLANTATION
TEMPERATURE
TECHNOLOGY
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3.6
论文数:
10.4W
被引数:
17.8W
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