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Dong Woo Kim

korea environment institute (kei)

6H指数
30论文数
209被引数
收录论文 6
发表时间
Characteristics of clean SiO2 atomic layer etching based on C6F6 physisorption
err2024-10-01
err0
PREAI
errSung, Da In; Tak, Hyun Woo; Kim, Hee Ju; Kim, Dong Woo; Yeom, Geun Young
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