G. Polupan - Publications, H-index & Citations

G. Polupan

Instituto Politécnico Nacional

12H指数

142论文数

572被引数

收录论文 30

发表时间

The impact of Ga and In co-doping on structural, optical, and electrical characteristics of Mg0.20Zn0.80O films for TCO applications Ga和In共掺杂对用于TCO应用的Mg0.20Zn0.80O薄膜的结构、光学和电学特性的影响

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

IF2.8

2026-10-03

PREAI

T. Torchynska; A. D. Rivero Chavez; B. El Filali; G. Polupan

Impact of modified B-splines on particle-in-cell modeling for electron-ion nonlinear dynamics 修改后B样条对电子-离子非线性动力学粒子网格建模的影响

Cogent Engineering

IF2.5

2025-12-31

PREAI

Garnica-Castro, Gibran Jalil; Polupan, Georgiy; Huerta-Chavez, Oliver Marcel; Lopez-Perez, Omar

Structure, optical and electrical characteristics of Al-doped MgxZn1-xO films obtained by spray pyrolysis

MRS COMMUNICATIONS

IF2.3

2025-10-01

PREAI

Oliveros Garcia, J.; El Filali, B.; Torchynska, T.; Polupan, G.; Douda, J.; Shcherbyna, L.

Impact of composition of AlGaInAs confining barriers on emission of InAs quantum dots embedded in AlGaAs/GaAs dot-in-a-well heterostructures AlGaInAs限制势垒的组成对嵌入在AlGaAs/GaAs阱内异质结构中的InAs量子点的发射的影响

OPTICAL MATERIALS

IF4.2

2024-10-01

PREAI

Torchynska, T.; Cisneros-Tamayo, R.; Moreno, I. J. Guerrero; Polupan, G.; Stintz, A.

Two excitation pathways of Pr3+ion emission in HfO2:Si:Pr films depending on crystalline phase transformations in annealing

JOURNAL OF LUMINESCENCE

IF3.6

2023-06-01

OAAI

Andrade, M. A. Garcia; Torchynska, T.; Espinola, J. L. Casas; Lozada, E. Velazquez; Polupan, G.; Khomenkova, L.; Gourbilleau, F.

Redesign of a Piston for a Diesel Combustion Engine to Use Biodiesel Blends

MATERIALS

IF3.2

2021-05-25

OAAI

Noriega Lozano, Jorge Israel; Paredes Rojas, Juan Carlos; Romero Angeles, Beatriz; Urriolagoitia Sosa, Guillermo; Contreras Mendoza, Belen Alejandra; Torres San Miguel, Christopher Rene; Polupan, Georgiy; Urriolagoitia Calderon, Guillermo Manuel

Emission, Er ion defects and structure of ZnO nanocrystal films prepared by ultrasonic spray pyrolysis

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-06-01

PREAI

El Filali, B.; Torchynska, T., V; Ramirez Garcia, J. L.; Casas Espinola, J. L.; Polupan, G.

AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots AlGaInAs覆盖层对含InAs量子点的AlGaAs/GaAs量子阱的发射和结构的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-02-01

PREAI

Cisneros Tamayo, R.; Polupan, G.; Torchynska, T., V; Vega-Macotela, L. G.; Stintz, A.; Escobosa Echavarria, A.

Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers 具有InAs量子点和AlGaInAs应变降低层的MBE结构的发射和hr-xrd研究

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-12-01

PREAI

Torchynska, T.; Cisneros-Tamayo, R.; Vega-Macotela, L.; Polupan, G.; Escobosa-Echavarria, A.

Luminescence, structure and aging c-axis - Oriented silver doped ZnO nanocrystalline films

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-06-01

PREAI

Torchynska, T. V.; Ballardo Rodriguez, I. Ch.; El Filali, B.; Polupan, G.; Diaz Cano, A. I.

Numerical study of the effect of jet velocity on methane-oxygen confined inverse diffusion flame in a 4 Lug-Bolt array

ENERGY

IF9.4

2017-12-01

PREAI

De la Cruz-Avila, M.; Martinez-Espinosa, E.; Polupan, Georgiy; Vicente, W.

Emission transformation in CdSe/ZnS quantum dots conjugated to biomolecules 与生物分子共轭的CdSe/ZnS量子点中的发射转换

JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY B-BIOLOGY

IF3.7

2017-05-01

PREAI

Torchynska, T. V.; Polupan, G.; Macotela, L. G. Vega

Radiative defects, emission and structure of ZnO nanocrystals obtained by electrochemical method

MATERIALS RESEARCH BULLETIN

IF5.7

2017-01-01

PREAI

El Filali, B.; Torchynska, T. V.; Polupan, G.; Shcherbyna, L.

Surface and defect modifications in mixture of ZnO and carbon nanocrystals at mechanical processing

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-06-01

PREAI

Torchynska, T.; Perez Millan, B.; Polupan, G.; Kakazey, M.

InAs quantum dot emission and annealing impact in quantum wells with strain reduced InAlGaAs layers

JOURNAL OF LUMINESCENCE

IF3.6

2015-07-01

PREAI

Torchynska, T. V.; Cisneros Tamayo, R.; Polupan, G.; Stints, A.; Shcherbyna, L.

Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2014-07-01

PREAI

Cisneros Tamayo, R.; Torchynska, T. V.; Polupan, G.; Guerrero Moreno, I. J.; Velazquez Lozada, E.; Shcherbyna, L.

Universal relations for calculation of the drag of transversely finned tube bundles

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER

IF5.8

2014-06-01

PREAI

Pis'mennyi, E. N.; Terekh, A. M.; Polupan, G. P.; Carvajal-Mariscal, I.; Sanchez-Silva, F.

Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells 嵌入InGaAs/InAlGaAs/GaAs量子阱中的InAs量子点的发射

JOURNAL OF LUMINESCENCE

IF3.6

2014-05-01

PREAI

Tamayo, R. Cisneros; Moreno, I. J. Guerrero; Polupan, G.; Torchynska, T. V.; Gomez, J. Palacios

Emission and strain in InGaAs/GaAs quantum wells with InAs quantum dots obtained at different temperatures

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2012-10-01

PREAI

Mascorro Alquicira, R. L.; Casas Espinola, J. L.; Velazquez Lozada, E.; Polupan, G.; Shcherbyna, L.

Emission and elastic strain in InAs dot-in-a well InGaAs/GaAs structures InAs井点式InGaAs/GaAs结构中的发射和弹性应变

JOURNAL OF LUMINESCENCE

IF3.6

2012-05-01

PREAI

Polupan, G.; Vega-Macotela, L. G.; Sanchez Silva, F.

研究方向