G. Ghibaudo - Publications, H-index & Citations

G. Ghibaudo

Communauté Université Grenoble Alpes

56H指数

1.2K论文数

1.7W被引数

收录论文 40

发表时间

A novel field effect transistor architecture - the GAIA MOSFET 新型场效应晶体管结构——GAIA MOSFET

Engineering Research Express

IF1.6

2026-05-01

PREAI

Balestra, F.; Ghibaudo, G.

Back-Gate Bias-Controllable Subthreshold Slope of Junctionless Transistors 背栅偏置可控结型场效应晶体管的亚阈值摆率

IEEE Transactions on Electron Devices

IF3.2

2025-07-01

PREAI

Dae-Young Jeon; So Jeong Park; Sylvain Barraud; Gérard Ghibaudo

Nanodevices Tend to Be Round

MICROMACHINES

IF3

2021-03-20

OAAI

Pananakakis, Georges; Ghibaudo, Gerard; Cristoloveanu, Sorin

Improvement of AIN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-08-10

OAAI

Legallais, Maxime; Mehdi, Hussein; David, Sylvain; Bassani, Franck; Labau, Sebastien; Pelissier, Bernard; Baron, Thierry; Martinez, Eugenie; Ghibaudo, Gerard; Salem, Bassem

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2K

APPLIED PHYSICS LETTERS

IF3.6

2020-06-15

PREAI

Casse, Mikael; Paz, Brune Cardoso; Ghibaudo, Gerard; Poiroux, Thierry; Vincent, Emmanuel; Galy, Philippe; Juge, Andre; Gaillard, Fred; de Franceschi, Silvano; Meunier, Tristan; Vinet, Maud

Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers

APPLIED PHYSICS LETTERS

IF3.6

2019-10-21

OAAI

Haffner, T.; Mahjoub, M. A.; Labau, S.; Aubin, J.; Hartmann, J. M.; Ghibaudo, G.; David, S.; Pelissier, B.; Bassani, F.; Salem, B.

Precise Extraction of Charge Carrier Mobility for Organic Transistors

ADVANCED FUNCTIONAL MATERIALS

IF19

2019-09-23

OAAI

Xu, Yong; Li, Yun; Li, Songlin; Balestra, Francis; Ghibaudo, Gerard; Li, Wenwu; Lin, Yen-Fu; Sun, Huabin; Wan, Jing; Wang, Xinran; Guo, Yufeng; Shi, Yi; Noh, Yong-Young

1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

APPLIED PHYSICS LETTERS

IF3.6

2019-06-20

PREAI

Muhea, Wondwosen E.; Romanjek, K.; Mescot, X.; Theodorou, C. G.; Charbonneau, M.; Mohamed, F.; Ghibaudo, G.; Iniguez, B.

Impact of Wet Treatments on the Electrical Performance of Ge0.9Sn0.1-Based p-MOS Capacitors

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2019-01-24

PREAI

Mahjoub, Mohamed Aymen; Haffner, Thibault; Labau, Sebastien; Eustache, Etienne; Aubin, Joris; Hartmann, Jean-Michel; Ghibaudo, Gerard; Pelissier, Bernard; Bassani, Franck; Salem, Bassem

Essential Effects on the Mobility Extraction Reliability for Organic Transistors

ADVANCED FUNCTIONAL MATERIALS

IF19

2018-08-30

OAAI

Xu, Yong; Sun, Huabin; Liu, Ao; Zhu, Huihui; Li, Binhong; Minari, Takeo; Balestra, Francis; Ghibaudo, Gerard; Noh, Yong-Young

Exploring the Charge Transport in Conjugated Polymers 共轭聚合物中电荷传输的探索

ADVANCED MATERIALS

IF26.8

2017-08-28

PREAI

Xu, Yong; Sun, Huabin; Li, Wenwu; Lin, Yen-Fu; Balestra, Francis; Ghibaudo, Gerard; Noh, Yong-Young

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

APPLIED PHYSICS LETTERS

IF3.6

2014-12-31

OAAI

Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard

Less mobility degradation induced by transverse electric-field in junctionless transistors

APPLIED PHYSICS LETTERS

IF3.6

2014-11-25

PREAI

Park, So Jeong; Jeon, Dae-Young; Montes, Laurent; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2014-11-10

PREAI

Piao, Mingxing; Joo, Min-Kyu; Na, Junhong; Kim, Yun-Jeong; Mouis, Mireille; Ghibaudo, Gerard; Roth, Siegmar; Kim, Wung-Yeon; Jang, Ho-Kyun; Kennedy, Gary P.; Dettlaff-Weglikowska, Urszula; Kim, Gyu-Tae

Separation of surface accumulation and bulk neutral channel in junctionless transistors

APPLIED PHYSICS LETTERS

IF3.6

2014-07-01

PREAI

Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Joo, Min-Kyu; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard

Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method (vol 104, 013301, 2014)

APPLIED PHYSICS LETTERS

IF3.6

2014-02-21

OAAI

Liu, Chuan; Xu, Yong; Ghibaudo, Gerard; Lu, Xubing; Minari, Takeo; Noh, Yong-Young

Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method

APPLIED PHYSICS LETTERS

IF3.6

2014-01-02

PREAI

Liu, Chuan; Xu, Yong; Ghibaudo, Gerard; Lu, Xubing; Minari, Takeo; Noh, Yong-Young

Grain boundary composition and conduction in HfO2: An ab initio study

APPLIED PHYSICS LETTERS

IF3.6

2013-05-24

PREAI

Xue, K. -H.; Blaise, P.; Fonseca, L. R. C.; Molas, G.; Vianello, E.; Traore, B.; De Salvo, B.; Ghibaudo, G.; Nishi, Y.

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2013-02-06

PREAI

Joo, Min-Kyu; Huh, Junghwan; Mouis, Mireille; Park, So Jeong; Jeon, Dae-Young; Jang, Doyoung; Lee, Jong-Heun; Kim, Gyu-Tae; Ghibaudo, Gerard

Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-12-14

OAAI

Theodorou, C. G.; Fasarakis, N.; Hoffman, T.; Chiarella, T.; Ghibaudo, G.; Dimitriadis, C. A.

研究方向