logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
M

Momčilo M. Pejović

University of Nis

20H指数
60论文数
1.1K被引数
收录论文 15
发表时间
logo
Separation of vacuum and gas breakdown processes in argon and their influence on electrical breakdown time delay氩气中真空和气体击穿过程的分离及其对电击穿时间延迟的影响
errVACUUM
IF3.9
err2020-03-01
err5
PREAI
errPejovic, Milic; Pejovic, Momcilo; Belic, Cedomir; Starikovic, Koviljka
err分享
err收藏
Investigation of breakdown voltage and electrical breakdown time delay in air-filled tube in presence of combined gas and vacuum breakdown mechanism气体和真空联合击穿机理下充气管击穿电压和电击穿时间延迟的研究
errVACUUM
IF3.9
err2012-07-01
err15
PREAI
errPejovic, Momcilo M.; Zivanovic, Emilija N.; Pejovic, Milic M.; Nesic, Nikola T.; Kovacevic, Dragan
err分享
err收藏
Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err2012-02-01
err40
PREAI
errPejovic, Milic M.; Pejovic, Momcilo M.; Jaksic, Aleksandar B.
err分享
err收藏
The influence of additional electrons on memory effect in nitrogen at low pressures
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2011-02-17
err14
PREAI
errNesic, Nikola T.; Pejovic, Momcilo M.; Pejovic, Milic M.; Zivanovic, Emilija N.
err分享
err收藏
Analysis of processes responsible for the memory effect in air at low pressures
errPLASMA SOURCES SCIENCE & TECHNOLOGY
IF3.3
err2010-07-08
err22
PREAI
errPejovic, Momcilo M.; Zivanovic, Emilija N.; Pejovic, Milic M.; Karamarkovic, Jugoslav P.
err分享
err收藏
Memory effect in argon in the presence of vacuum and gas electrical breakdown mechanisms
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-01-11
err9
PREAI
errPejovic, Momcilo M.; Pejovic, Milic M.
err分享
err收藏
Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2007-02-01
err26
PREAI
errRistic, Goran S.; Pejovic, Momcilo M.; Jaksic, Aleksandar B.
err分享
err收藏
Investigations of breakdown voltage and time delay of gas-filled surge arresters
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2006-09-29
err18
PREAI
errPejovic, Milic M.; Pejovic, Momcilo M.
err分享
err收藏
Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing
errAPPLIED SURFACE SCIENCE
IF6.9
err2006-02-01
err11
PREAI
errRistic, GS; Pejovic, MM; Jaksic, AB
err分享
err收藏
The influence of some species formed during the discharge and gamma and UV radiation on breakdown voltage and time delay in nitrogen and neon at low pressure
errPLASMA SOURCES SCIENCE & TECHNOLOGY
IF3.3
err2005-05-31
err15
PREAI
errPejovic, MM; Pejovic, MM
err分享
err收藏
Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs
errAPPLIED SURFACE SCIENCE
IF6.9
err2003-12-01
err22
PREAI
errRistic, GS; Pejovic, MM; Jaksic, AB
err分享
err收藏
Electrical breakdown in low pressure gases低压气体中的电击穿
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2002-05-02
err141
PREAI
errPejovic, MM; Ristic, GS; Karamarkovic, JP
err分享
err收藏
Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-12-18
err3
errOAAI
errJaksic, AB; Pejovic, MM; Ristic, GS
err分享
err收藏
Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2000-10-17
err26
PREAI
errPejovic, MM; Ristic, GS
err分享
err收藏
pMOS dosimetric transistors with two-layer gate oxide
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err1997-10-01
err37
PREAI
errRistic, G; Jaksic, A; Pejovic, M
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
G
Goran Ristić
H 指数: 25 · 论文数: 155
M
Milić M. Pejović
H 指数: 23 · 论文数: 142
A
A. Jakšić
H 指数: 21 · 论文数: 78
J
J.P. Karamarković
H 指数: 12 · 论文数: 53
E
Emilija Živanović
H 指数: 9 · 论文数: 46
查看更多