R. T. Tung - Publications, H-index & Citations

R. T. Tung

city university of new york (cuny) system

50H指数

199论文数

1.3W被引数

收录论文 21

发表时间

Fermi level pinning for zinc-blende semiconductors explained with interface bonds

PHYSICAL REVIEW B

IF3.7

2021-02-01

PREAI

Tung, Raymond T.; Kronik, Leeor

Quantitative explanation of the Schottky barrier height

PHYSICAL REVIEW B

IF3.7

2021-01-14

PREAI

Tung, Raymond T.; Kronik, Leeor

Bulklike band-offset mystery solved through energy minimization: Lessons from perovskite oxide heterojunctions

PHYSICAL REVIEW B

IF3.7

2019-03-04

PREAI

Tung, Raymond T.; Kronik, Leeor

Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2 x 4 interface: An in-situ synchrotron radiation photoemission study

APPLIED SURFACE SCIENCE

IF6.9

2017-01-01

PREAI

Cheng, Chiu-Ping; Chen, Wan-Sin; Lin, Keng-Yung; Wei, Guo-Jhen; Cheng, Yi-Ting; Lin, Yen-Hsun; Wan, Hsien-Wen; Pi, Tun-Wen; Tung, Raymond T.; Kwo, Jueinai; Hong, Minghwei

Band offset formation at semiconductor heterojunctions through density-based minimization of interface energy

PHYSICAL REVIEW B

IF3.7

2016-08-24

PREAI

Tung, Raymond T.; Kronik, Leeor

The physics and chemistry of the Schottky barrier height

APPLIED PHYSICS REVIEWS

IF11.6

2014-01-13

1.2K

OAAI

Tung, Raymond T.

Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces

APPLIED SURFACE SCIENCE

IF6.9

2013-11-01

PREAI

Li, Yang; Long, Wei; Tung, Raymond T.

Inhomogeneous ohmic contacts: Barrier height and contact area determination

APPLIED PHYSICS LETTERS

IF3.6

2012-07-30

PREAI

Li, Yang; Long, Wei; Tung, Raymond T.

Bidirectional Control of Silicon's Surface Potential by Means of Molecular Coverage

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2010-10-12

PREAI

Puniredd, Sreenivasa Reddy; Platzman, Ilia; Tung, Raymond T.; Haick, Hossam

Tuning the Electrical Properties of Si Nanowire Field-Effect Transistors by Molecular Engineering

SMALL

IF12.1

2009-12-01

PREAI

Bashouti, Muhammad Y.; Tung, Raymond T.; Haick, Hossam

Electrostatic properties of ideal and non-ideal polar organic monolayers: Implications for electronic devices

ADVANCED MATERIALS

IF26.8

2007-11-29

245

PREAI

Natan, Amir; Kronik, Leeor; Haick, Hossam; Tung, Raymond T.

Controlling semiconductor/metal junction barriers by incomplete, nonideal molecular monolayers

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2006-05-06

120

PREAI

Haick, Hossam; Ambrico, Marianna; Ligonzo, Teresa; Tung, Raymond T.; Cahen, David

Recent advances in Schottky barrier concepts

MATERIALS SCIENCE & ENGINEERING R-REPORTS

IF26.8

2001-11-01

1.2K

PREAI

Tung, RT

Formation of an electric dipole at metal-semiconductor interfaces 在金属-半导体界面形成电偶极子

PHYSICAL REVIEW B

IF3.7

2001-11-01

311

PREAI

Tung, RT

Oxygen and the thermal stability of thin CoSi2 layers

APPLIED PHYSICS LETTERS

IF3.6

1998-05-18

PREAI

Tung, RT

Native point defects in Si with a CoSi2 film:: Single crystal versus polycrystalline

APPLIED PHYSICS LETTERS

IF3.6

1998-05-04

PREAI

Herner, SB; Gossmann, HJ; Tung, RT

Ultrathin silicide formation for ULSI devices

APPLIED SURFACE SCIENCE

IF6.9

1997-06-01

PREAI

Tung, RT

Growth of TiSi2 from codeposited TiSix layers and interfacial layers

APPLIED PHYSICS LETTERS

IF3.6

1997-05-05

PREAI

Tung, RT; Fujii, K; Kikuta, K; Chikaki, S; Kikawa, T

Oxide mediated epitaxy of CoSi2 on silicon

APPLIED PHYSICS LETTERS

IF3.6

1996-06-10

199

PREAI

Tung, RT

The influence of TiSi2 and CoSi2 growth on si native point defects: The role of the diffusing species

APPLIED PHYSICS LETTERS

IF3.6

1996-05-13

PREAI

Herner, SB; Jones, KS; Gossmann, HJ; Tung, RT; Poate, JM; Luftman, HS

研究方向