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W

Woojin Jeon

Kyung Hee University

28H指数
137论文数
2.9K被引数
收录论文 68
发表时间
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Dual-Mode Magnetic Elastomer for On-Demand Motion and Degradation双模磁弹性体用于按需运动和降解
errAdvanced Functional Materials
IF19
err2026-05-11
err0
errOAAI
errJieun Han; Hyun An; Min-Ha Oh; Yu-Lim Lee; Woojin Jeon; Kyung-Sub Kim; Jae-Hwan Lee; Seungmin Kang; Yoon-Nam Kim; Ji-Won Kang; Daewhan Kim; Min Sang Kwon; Sang-Koog Kim; Seung-Kyun Kang
err分享
err收藏
Improved Molybdenum Dioxide Atomic Layer Deposition Process by Introducing Pre-Reduction Agent通过引入预还原剂改进的二氧化钼原子层沉积工艺
errAdvanced Electronic Materials
IF5.3
err2026-03-02
err0
errOAAI
errSoo Min Yoo; Seungwoo Lee; Chaeyeong Hwang; Woojin Jeon
err分享
err收藏
Optimization of In2O3 doping concentration for high-performance ZrO2-based metal-insulator-metal capacitorsIn2O3掺杂浓度优化以提升ZrO2基金属-绝缘体-金属电容器的性能
errMaterials Today Communications
IF4.5
err2026-02-08
err0
errOAAI
errJonghwan Jeong; Seung Yeon Kim; Hanseok Jeong; Seungwoo Lee; Yoona Choi; Jihun Nam; Woojin Jeon
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err收藏
Overcoming Volatility in Ion Gel via Ag Doping for Nonvolatile Memristive Switching通过Ag掺杂克服离子凝胶中的挥发性以实现非挥发性忆阻器开关
errACS Omega
IF4.3
err2026-01-01
err0
errOAAI
errNam, Jihun; Jeong, Jonghwan; Lee, Sangmin; Kim, Youngjin; Jeon, Woojin
err分享
err收藏
Unveiling the capacitance overestimation of a HfO2–ZrO2 solid solution at the morphotropic phase boundary揭示HfO2–ZrO2固溶体在形貌相界处的电容过度估计
errJ. Mater. Chem. C
IF0
err2025-12-05
err0
PREAI
errJaehyeon Yun †; Seungyeon Kim †; Woojin Jeon; Taehwan Moon
err分享
err收藏
Modulation of Electrical and Thermal Properties of Metal Nanowire-Based Heatable Textiles: Evaluation of Substrate Compatibility and Dip-and-Dry Process Applicability
errKOREAN JOURNAL OF METALS AND MATERIALS
IF1.4
err2025-11-01
err0
errOAAI
errKoo, Junmo; Lee, Chankyoung; Lee, Minjae; Kim, Yongchan; Kim, Minjae; Jeon, Woojin; Park, Jaewoo; Choi, Dooho
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err收藏
Enhanced Area-Selective Deposition via NH3 Plasma Treatment in Atomic Layer Deposition for Si/TiN Substrates通过原子层沉积中NH3等离子体处理实现Si/TiN衬底的选择性增强沉积区域
errACS Applied Materials & Interfaces
IF8.2
err2025-11-01
err1
PREAI
errPark, Jeong Hyeon; Choi, Yoona; Yoo, Soo Min; Kim, Haeryong; Jeon, Woojin
err分享
err收藏
Self-Saturated Deposition and Etching in Atomic-Scale (SDEA) Process of Molybdenum Oxides via Sequential Ozone and Water Reactions钼氧化物原子尺度自饱和沉积与刻蚀（SDEA）过程中的顺序臭氧和水反应
errAdvanced Materials Technologies
IF6.2
err2025-08-17
err0
errOAAI
errChaeyeong Hwang; Seungwoo Lee; Soo Min Yoo; Christophe Vallée; Woojin Jeon
err分享
err收藏
In2O3/TiN bi-layer electrode for ZrO2-based metal-insulator-metal capacitorIn2O3/TiN双层电极用于ZrO2基金属-绝缘体-金属电容器
errApplied Surface Science
IF6.9
err2025-07-24
err0
PREAI
errYoona Choi; Seungwoo Lee; Jonghwan Jeong; Donghyun Kim; Hansol Oh; Yongjoo Park; Woojin Jeon
err分享
err收藏
UV-Triggered Cascading Degradation of Silicone Elastomer via Self-Fluoride Amplification紫外光触发的通过自氟化放大机制的硅橡胶级联降解
errAdvanced Science
IF14.1
err2025-07-11
err0
errOAAI
errYoon-Nam Kim; Woojin Jeon; Min-Ha Oh; Hee-June Seo; Min Sang Kwon; Seung-Kyun Kang
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Temperature-Dependent {111}-Texture Transfer to Hf0.5Zr0.5O2 Films from {111}-Textured TiN Electrode and Its Impact on Ferroelectricity温度依赖的{111}织构从{111}织构的TiN电极向Hf0.5Zr0.5O2薄膜的转移及其对铁电性的影响
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-03-28
err0
errOAAI
errHan, DH; Kim, SY; Jeong, HW; Lee, YH; Kim, YY; Jeon, W; Park, MH
err分享
err收藏
Interfacial Reaction Engineering for Use in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors Using N2 + H2 Gas Pretreatment
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-03-01
err0
PREAI
errKim, Seung Yeon; Han, Dong Hee; Yun, Jaehyeon; Jeon, Woojin
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err收藏
Introducing Y2O3 passivation layer for utilizing TiSiN electrode on ZrO2-based 2-based metal-insulator-metal capacitor applications
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-01-01
err0
PREAI
errJeong, Jonghwan; Lee, Aejin; Park, Jusang; Jeon, Woojin
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err收藏
Achieving Equivalent Oxide Thickness Scaling of a ZrO2 Dielectric Thin Film via Gd Doping without Sacrificing Tetragonal Crystallinity
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-11-21
err2
PREAI
errLee, Seungwoo; Nam, Jihun; Choi, Yoona; Jeong, Jonghwan; Nam, Min Kyeong; Oh, Hansol; Kim, Hanbyul; Park, Yongjoo; Kim, Youngjin; Jeon, Woojin
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Leakage current control of Y-HfO2 for dynamic random access memory applications via ZrO2 stacking
errCERAMICS INTERNATIONAL
IF5.6
err2024-11-01
err1
PREAI
errRyu, Young Uk; Oh, Hansol; Hwang, Inchun; Park, Yongjoo; Kim, Youngjin; Jeon, Woojin
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Novel deuterated cyclopentadienyl zirconium/hafnium precursors for atomic layer deposition of high-performance ZrO2/HfO2 thin films
errAPPLIED MATERIALS TODAY
IF6.9
err2024-10-01
err0
errOAAI
errPark, Sunwoo; Choi, Yoona; Park, Sangwook; Lee, Hayoon; Lee, Kiho; Kang, Seokwoo; Park, Jongwook; Jeon, Woojin
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In-situ crystallization of rutile-phased TiO2 via the template effect using MoO2 electrode for the metal-insulator-metal capacitor applications
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2024-10-01
err1
PREAI
errHwang, Chaeyeong; Kim, Ye Won; Park, Jongwook; Kim, Myeong Ho; Kim, Jin-Sik; Jeon, Woojin
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Improvement in dielectric properties of ZrO2 thin film by employing a Zr precursor with enhanced thermal stability in high-temperature atomic layer deposition
errMATERIALS TODAY COMMUNICATIONS
IF4.5
err2024-08-01
err2
PREAI
errChoi, Yoona; Lee, Ae Jin; Park, Jongwook; Oh, Hansol; Park, Yongjoo; Jeon, Woojin
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err收藏
Hybrid reactant-enabled atomic layer deposition of HfO 2 for enhancing metal-insulator-metal capacitor fabricated on TiN electrode
errMATERIALS TODAY COMMUNICATIONS
IF4.5
err2024-08-01
err0
PREAI
errLee, In Gyu; Park, Woo Young; Ryu, Young Uk; Jeon, Woojin
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err收藏
Suppressing Interfacial Layer Formation in ZrO2-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-04-24
err4
PREAI
errLee, Seungwoo; Seol, Hyeon Ho; Nam, Min Kyeong; Han, Dong Hee; Kim, Daeyeong; Oh, Hansol; Kim, Hanbyul; Park, Yongjoo; Kim, Youngjin; Jeon, Woojin
err分享
err收藏

研究方向

暂无研究方向
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