logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
J

Jin‐Seong Park

hanyang university

63H指数
552论文数
1.7W被引数
收录论文 234
发表时间
logo
Metal Cation Chemistry and Amorphous Structure Governing Hydrogen Tolerance in Oxide Semiconductor Channels for 3D DRAM金属阳离子化学和氧化物半导体通道中的无定形结构调控三维DRAM的氢耐受性
errAdvanced Electronic Materials
IF5.3
err2026-09-15
err0
errOAAI
errSeong-Hwan Ryu; Sun Myung Lee; Kwang-Hee Lee; Jee-Eun Yang; Sangwook Kim; Jin-Seong Park
err分享
err收藏
Surface ligand engineering for defect-suppressed TiO2 dielectrics by functional precursor-assisted ozone ALD通过功能前驱体辅助臭氧ALD制备缺陷抑制型TiO2介电材料的表面配体工程
errApplied Surface Science
IF6.9
err2026-09-13
err0
PREAI
errMin Chan Kim; Hae Lin Yang; Seong A. Shin; Hyeseong Lee; Ji-Yeon Park; Sae-Chan Oh; Changbong Yeon; Jaesun Jung; Jin-Seong Park
err分享
err收藏
Backbone-Length-Optimized Inhibitors Deliver Long-Retention Selectivity in Area-Selective ALD of VO2骨架长度优化的抑制剂在区域选择性ALD沉积V2O5中实现长效选择性
errAdvanced Science
IF14.1
err2026-05-15
err0
errOAAI
errHae Lin Yang; Eun Chong Cho; Minchan Kim; Hye In Park; Ga-young Lee; Seunghwan Lee; Beomseok Kim; Changhwa Jung; Youngkwon Kim; Jin-Seong Park
err分享
err收藏
Hydrogen-State-Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation氢态工程氧化物半导体通道实现可靠的2T0C DRAM操作
errAdvanced Electronic Materials
IF5.3
err2026-05-01
err0
errOAAI
errLee, Jun-Yeoub; Hwang, Taewon; Choi, Su-Hwan; Oh, Hye-Jin; Park, Chang-Kyun; Park, Jin-Seong
err分享
err收藏
Composition-driven spinel crystallinity engineering for high-performance magnesium indium oxide TFTs via thermal atomic layer deposition组分调控的尖晶石结晶度工程：通过热原子层沉积制备高性能镁铟氧化物薄膜晶体管
errMaterials Science in Semiconductor Processing
IF4.6
err2026-05-01
err0
PREAI
errChi-Hoon Lee; Ji-Su Bae; Sung-Hae Lee; Jin-Seong Park
err分享
err收藏
Atomic layer processing for Ångström-scale precision in 3D-integrated semiconductor manufacturing原子层处理技术用于实现埃尺度的精度，在三维集成半导体制造中。
errInternational Journal of Extreme Manufacturing
IF21.3
err2026-03-31
err0
errOAAI
errHae Lin Yang; Min Chan Kim; Gi-Beom Park; Ji-Yeon Park; Hyein Park; Jihoon Shin; Jinho Ahn; Jin-Seong Park
err分享
err收藏
High-Temperature-Stable Polycrystalline ALD-InGaO Channels Enabled by Buffer-Layer Engineering高温稳定的多晶ALD-InGaO通道通过缓冲层工程实现
errACS Applied Electronic Materials
IF4.7
err2026-03-01
err0
PREAI
errKim, Dong-Gyu; Oh, Hye-Jin; Cho, Tae Woong; Kwag, Jae-Hyeok; Hur, Jaeseok; Choi, Sunghyun; Park, Kwangmin; Park, Jin-Seong
err分享
err收藏
High-temperature interfacial stability of In2O3 FETs with SiO2 versus Al2O3 insulators enabling 3 nm channel scalingIn₂O₃ FETs在SiO₂与Al₂O₃绝缘体下的高温界面稳定性，实现3 nm沟道缩放
errApplied Surface Science
IF6.9
err2026-02-09
err0
PREAI
errHye-Jin Oh; Jun-Yeoub Lee; Jun Young Beom; Ji Eun Sun; Chi-Hoon Lee; Chang-Kyun Park; Duho Kim; Minhyuk Kim; Junseok Lee; Seunghyun Cho; Donghwan Lee; Jinhyuk Yoo; Jin-Seong Park
err分享
err收藏
Cocktail Precursor Approach for Homogeneous ALD InGaO Film Growth Overcoming Limits of Mobility–Reliability Trade-Off in Oxide Semiconductors
errACS Applied Materials and Interfaces
IF8.2
err2026-01-22
err0
PREAI
errSeong-Hwan Ryu; Dong-Gyu Kim; Haklim Koo; Kyuhyun Yeom; Dae Won Ryu; Chang-Kyun Park; Jin-Seong Park
err分享
err收藏
Metal–Organic Hybrid Material with Polar Covalent Bonds as a Protective Layer for Zn Anodes in Aqueous Zinc Batteries金属-有机杂化材料，其具有极性共价键，可作为水系锌电池锌负极的保护层
errBatteries & Supercaps
IF4.7
err2025-12-15
err0
PREAI
errWon Jun Chang; Seunghwan Lee; Geon Ho Baek; Daeyeop Jeong; Jin-Seong Park; Won Il Park
err分享
err收藏
Work function tuning in TiAlN thin films by trace Al doping for CMOS-compatible metal gates通过微量Al掺杂对TiAlN薄膜进行功函数调控以实现CMOS兼容金属栅极
errJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
IF2.1
err2025-12-01
err0
PREAI
errJeong, Gyeong Min; Kim, Hae-dam; Park, Jin-Seong
err分享
err收藏
Crystallinity-Preserving Atomic Layer Etching of Ultrathin In2O3 for Stable Oxide Nanoelectronics保持结晶度的超薄In2O3原子层刻蚀用于稳定的氧化物纳米电子学
errACS Nano
IF16
err2025-11-10
err0
PREAI
errMin Chan Kim; Hae Lin Yang; Ji Hyun Gwoen; Seong-A. Shin; Min-Seo Kim; Jin-Seong Park
err分享
err收藏
Engineering metal/oxide interfaces in IGZO thin-film transistors via atomic-layer-grown SiO2 interlayers for improved contact performance通过原子层生长的SiO2中间层工程化IGZO薄膜晶体管中的金属/氧化物界面，以改善接触性能
errApplied Surface Science
IF6.9
err2025-11-07
err0
PREAI
errTaewon Hwang; So Young Lim; Jeong-Su Song; Sangwoo Lee; Jin-Seong Park
err分享
err收藏
Precursor ligand chemistry-driven engineering of SiNx gate insulators for enhanced IGZO TFTs前驱体配体化学驱动的SiNx栅绝缘体工程，用于增强IGZO TFTs
errApplied Surface Science
IF6.9
err2025-10-27
err0
PREAI
errTae Heon Kim; Sang-Hyun Kim; YuJin Yang; Ji Min Kim; Tae-Kyung Kim; Ki-Cheol Song; Yeonhee Lee; Jin-Seong Park
err分享
err收藏
Precursor-driven nucleation and texture control governing resistivity in low-temperature In2O3 films前驱体驱动的成核与织构控制对低温In₂O₃薄膜电阻率的调控
errJournal of Alloys and Compounds
IF6.3
err2025-10-19
err0
PREAI
errTae-Kyung Kim; Ji-Hyun Gwoen; Ju-Hwan Han; Hae-Dam Kim; Ji Min Kim; Tae-Heon Kim; Sang-Hyun Kim; Ki-Cheol Song; Jin-Seong Park
err分享
err收藏
Atomic layer deposition原子层沉积
errNature Reviews Methods Primers
IF56
err2025-10-16
err0
PREAI
errErwin Kessels; Anjana Devi; Jin-Seong Park; Mikko Ritala; Angel Yanguas-Gil; Claudia Wiemer
err分享
err收藏
Unlocking the synergy of ALD and ALE: tailoring crystallinity and etch rates in ZnO thin films at the atomic scale解锁ALD与ALE的协同作用：在原子尺度上调控ZnO薄膜的结晶度和蚀刻速率
errApplied Surface Science
IF6.9
err2025-09-26
err0
PREAI
errJi Hyun Gwoen; Hae Lin Yang; Min Chan Kim; Gyeong Min Jeong; Tae Kyung Kim; Cas Visser; Wilhelmus M.M. (Erwin) Kessels; Jin-Seong Park
err分享
err收藏
Enhanced Device Characteristics of Hybrid-Channel (Poly-Si/IGO) Structures with Ga2O3 and Al2O3 Interlayers by Suppressing Oxidation-Induced Variability for Ultra-High-Density 3D NAND Flash Memory Applications通过抑制氧化诱发的变化，提升含Ga₂O₃和Al₂O₃中间层的混合通道（Poly-Si/IGO）结构器件特性，以用于超高密度3D NAND闪存应用
errAdvanced Functional Materials
IF19
err2025-09-09
err0
PREAI
errTaewon Hwang; Jeongmin Shin; So Young Lim; Sohee Kim; Jae-Min Sim; Su-Hwan Choi; Youngji Noh; Wanki Kim; Daewon Ha; Jin-Seong Park; Yun-Heub Song
err分享
err收藏
Ultra-High Mobility Atomically-Ordered InGaZnO Transistors Through Atomic Layer Deposition通过原子层沉积制备的超高迁移率原子级有序InGaZnO晶体管
errAdvanced Electronic Materials
IF5.3
err2025-07-13
err0
errOAAI
errYoon-Seo Kim; Hyeon Woo Kim; Taewon Hwang; Jinho Ahn; Sung Beom Cho; Jin-Seong Park
err分享
err收藏
Stress-Relief Island Design of Island-Bridge Structured InZnO TFT for Form-Free Display Applications Using Spatial ALD基于空间ALD的岛桥结构InZnO TFT的应力释放岛设计及其在无形态显示应用中的研究
errACS Applied Electronic Materials
IF4.7
err2025-07-03
err0
PREAI
errWon-Bum Lee; Min-Seo Kim; Chi-Hoon Lee; Jun Hyung Lim; Jin-Seong Park
err分享
err收藏

研究方向

暂无研究方向
合作学者
合作期刊
Y
Yi Cui
H 指数: 253 · 论文数: 1.1K
Z
Zhenan Bao
H 指数: 221 · 论文数: 1.2K
E
Edward H. Sargent
H 指数: 213 · 论文数: 1.2K
M
Mohammad Khaja Nazeeruddin
H 指数: 183 · 论文数: 1.2K
A
Abdullah M. Asiri
H 指数: 168 · 论文数: 2.9K
查看更多