Yoshihiro Irokawa - Publications, H-index & Citations

Yoshihiro Irokawa

National Institute for Materials Science

22H指数

129论文数

1.7K被引数

收录论文 17

发表时间

Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces 氮化镓金属-氧化物-半导体界面中深能级的研究

ECS Journal of Solid State Science and Technology

IF2.2

2026-05-01

OAAI

Irokawa, Yoshihiro; Usami, Mamoru; Uzuhashi, Jun; Ohkubo, Tadakatsu; Nabatame, Toshihide; Koide, Yasuo

Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography

PHYSICAL REVIEW APPLIED

IF4.4

2019-02-28

OAAI

Kim, Jaemyung; Seo, Okkyun; Song, Chulho; Hiroi, Satoshi; Chen, Yanna; Irokawa, Yoshihiro; Nabatame, Toshihide; Koide, Yasuo; Sakata, Osami

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates 自支撑GaN衬底上Mg注入和Mg掺杂GaN层中缺陷的比较分析

NANOSCALE RESEARCH LETTERS

IF4.1

2018-12-11

OAAI

Kumar, Ashutosh; Mitsuishi, Kazutaka; Hara, Toru; Kimoto, Koji; Irokawa, Yoshihiro; Nabatame, Toshihide; Takashima, Shinya; Ueno, Katsunori; Edo, Masaharu; Koide, Yasuo

First-Principles Studies of Hydrogen Adsorption at Pd-SiO2 Interfaces

SENSORS

IF3.5

2015-06-22

OAAI

Irokawa, Yoshihiro; Usami, Mamoru

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

SENSORS

IF3.5

2011-01-11

OAAI

Irokawa, Yoshihiro

π-Conjugated polymer/GaN Schottky solar cells

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2011-01-01

PREAI

Matsuki, Nobuyuki; Irokawa, Yoshihiro; Nakano, Yoshitaka; Sumiya, Masatomo

Implantation temperature dependence of Si activation in AlGaN

APPLIED PHYSICS LETTERS

IF3.6

2006-05-04

PREAI

Irokawa, Y; Ishiguro, O; Kachi, T; Pearton, SJ; Ren, F

Activation characteristics of ion-implanted Si+ in AlGaN -: art. no. 192102

APPLIED PHYSICS LETTERS

IF3.6

2005-05-02

PREAI

Irokawa, Y; Fujishima, O; Kachi, T; Pearton, SJ; Ren, F

Electrical characteristics of GaN implanted with Si+ at elevated temperatures -: art. no. 112108

APPLIED PHYSICS LETTERS

IF3.6

2005-03-09

PREAI

Irokawa, Y; Fujishima, O; Kachi, T; Pearton, SJ; Ren, F

MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2004-04-12

117

PREAI

Irokawa, Y; Nakano, Y; Ishiko, M; Kachi, T; Kim, J; Ren, F; Gila, BP; Onstine, AH; Abernathy, CR; Pearton, SJ; Pan, CC; Chen, GT; Chyi, JI

Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

APPLIED PHYSICS LETTERS

IF3.6

2003-12-15

OAAI

Irokawa, Y; Kim, J; Ren, F; Baik, KH; Gila, BP; Abernathy, CR; Pearton, SJ; Pan, CC; Chen, GT; Chyi, JI

160-A bulk GaN Schottky diode array

APPLIED PHYSICS LETTERS

IF3.6

2003-10-13

PREAI

Baik, KH; Irokawa, Y; Kim, J; LaRoche, JR; Ren, F; Park, SS; Park, YJ; Pearton, SJ

Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

APPLIED PHYSICS LETTERS

IF3.6

2003-09-15

PREAI

Irokawa, Y; Luo, B; Kim, J; LaRoche, JR; Ren, F; Baik, KH; Pearton, SJ; Pan, CC; Chen, GT; Chyi, JI; Park, SS; Park, YJ

Inversion behavior in Sc2O3/GaN gated diodes

APPLIED PHYSICS LETTERS

IF3.6

2002-07-08

OAAI

Kim, J; Mehandru, R; Luo, B; Ren, F; Gila, BP; Onstine, AH; Abernathy, CR; Pearton, SJ; Irokawa, Y

Characteristics of MgO/GaN gate-controlled metal-oxide-semiconductor diodes

APPLIED PHYSICS LETTERS

IF3.6

2002-06-17

103

PREAI

Kim, J; Mehandru, R; Luo, B; Ren, F; Gila, BP; Onstine, AH; Abernathy, CR; Pearton, SJ; Irokawa, Y

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2002-01-01

PREAI

Luo, B; Mehandru, R; Kim, J; Ren, F; Gila, BP; Onstine, AH; Abernathy, CR; Pearton, SJ; Fitch, R; Gillespie, J; Jenkins, T; Sewell, J; Via, D; Crespo, A; Irokawa, Y

Electrical properties of 3C-SiC layers grown on silicon substrates with a novel stress relaxation structure

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2001-01-01

PREAI

Irokawa, Y; Kodama, M; Kachi, T

研究方向