A.S. Augustine Fletcher - Publications, H-index & Citations

A.S. Augustine Fletcher

srm institute of science and technology

14H指数

35论文数

977被引数

收录论文 12

发表时间

MXene based Nanostructures for NeuroBiosensing: A Review MXene基纳米结构用于神经生物传感：综述

Materials Today Sustainability

IF7.9

2026-08-18

OAAI

A.S.Augustine Fletcher; J. Ajayan; Asisa Kumar Panigrahy; P. Murugapandiyan; Deepak Kumar Panda; null Bestley Joe; Amit Krishna Dwivedi

Inorganic Nanocatalysts for Energy Systems, Environmental/Industrial Processes and Healthcare Applications : A Comprehensive Review 无机纳米催化剂在能源系统、环境/工业过程及医疗保健应用：综合评述

Materials Today Sustainability

IF7.9

2025-10-04

OAAI

J. Ajayan; S. Sreejith; B. Mounika; A.S. Augustine Fletcher; Ribu Mathew; M. Saravanan; Puneet Sharma

An Area Efficient Approach to Realize Vedic Multiplier using 4-2 Compressor adder for Image processing Applications 一种实现高效面积Vedic乘法器的4-2压缩器加法器方法，用于图像处理应用

INTERNATIONAL JOURNAL OF ELECTRONICS

IF1.1

2025-09-01

PREAI

Dhanasekar, S.; Govindaraj, V.; Augustine Fletcher, A. S.

Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance ScAlN/GaN高电子迁移率晶体管的最新进展：材料、性能和器件性能

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-07-01

PREAI

Murugapandiyan, P.; Maheswari, S.; Fletcher, A. S. Augustine; Saranya, G.; Anandan, P.

Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-11-01

PREAI

Ajayan, J.; Nirmal, D.; Mohankumar, P.; Mounika, B.; Bhattacharya, Sandip; Tayal, Shubham; Fletcher, A. S. Augustine

Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2022-10-01

PREAI

Hamza, K. Husna; Nirmal, D.; Fletcher, A. S. Augustine; Ajayan, J.; Natarajan, Ramkumar

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2021-11-01

OAAI

Murugapandiyan, P.; Nirmal, D.; Hasan, Md Tanvir; Varghese, Arathy; Ajayan, J.; Fletcher, A. S. Augustine; Ramkumar, N.

Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

IF3.2

2021-07-01

PREAI

Hamza, K. Husna; Nirmal, D.; Fletcher, A. S. Augustine; Arivazhagan, L.; Ajayan, J.; Natarajan, Ramkumar

Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

IF3.2

2019-08-01

PREAI

Arivazhagan, L.; Nirmal, D.; Godfrey, D.; Ajayan, J.; Prajoon, P.; Fletcher, A. S. Augustine; Jone, A. Amir Anton; Kumar, J. S. Raj

Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

IF3.2

2019-02-01

PREAI

Fletcher, A. S. Augustine; Nirmal, D.; Ajayan, J.; Arivazhagan, L.

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application 基于小信号等效电路的大功率AlGaN/GaN HEMT电流崩塌建模

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-01-01

PREAI

Nirmal, D.; Arivazhagan, L.; Fletcher, A. S. Augustine; Ajayan, J.; Prajoon, P.

A survey of Gallium Nitride HEMT for RF and high power applications

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-09-01

206

PREAI

Fletcher, A. S. Augustine; Nirmal, D.

研究方向