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D

D. Misra

New Jersey Institute of Technology

19H指数
279论文数
1.4K被引数
收录论文 22
发表时间
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IEEE CASS/EDS Chapter of North Jersey Section Receives IEEE CASS 2024 Regions 1-7 Chapter of the Year Award [CASS Chapter Highlights]
errIEEE CIRCUITS AND SYSTEMS MAGAZINE
IF3.5
err2024-01-01
err0
PREAI
errAngizi, Shaahin; Misra, Durga
err分享
err收藏
Detection of cancer antigens (CA-125) using gold nano particles on interdigitated electrode-based microfluidic biosensor
errNANO CONVERGENCE
IF11
err2019-01-17
err56
errOAAI
errNunna, Bharath Babu; Mandal, Debdyuti; Lee, Joo Un; Singh, Harsimranjit; Zhuang, Shiqiang; Misra, Durgamadhab; Bhuyian, Md Nasir Uddin; Lee, Eon Soo
err分享
err收藏
Fabrication of Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes on Metal Substrates for Flexible Photonics
errACS OMEGA
IF4.3
err2017-09-12
err13
errOAAI
errPhilip, Moab Rajan; Choudhary, Dipayan Datta; Djavid, Mehrdad; Bhuyian, Md Nasiruddin; Thang Ha Quoc Bui; Misra, Durgamadhab; Khreishah, Abdallah; Piao, James; Hoang Duy Nguyen; Le, Khai Quang; Hieu Pham Trung Nguyen
err分享
err收藏
Frequency and Area Dependence of High-K/Ge MOS Capacitors
errselected proceedings of the
IF0
err2017-08-04
err0
PREAI
errMitevski, I.; Misra, D.; Bhuyian, M. N.; Ding, Y.
err分享
err收藏
Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-05-02
err6
PREAI
errBhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.
err分享
err收藏
Impact of cyclic plasma treatment on oxygen vacancy defects in TiN/HfZrO/SiON/Si gate stacks
errAPPLIED PHYSICS LETTERS
IF3.6
err2015-05-14
err17
PREAI
errBhuyian, Md Nasir Uddin; Poddar, S.; Misra, D.; Tapily, K.; Clark, R. D.; Consiglio, S.; Wajda, C. S.; Nakamura, G.; Leusink, G. J.
err分享
err收藏
Improved dislocation model of silicon solar cells with the effect of front and back surface recombination velocity
errPROGRESS IN PHOTOVOLTAICS
IF7.6
err2013-09-10
err4
PREAI
errBudhraja, Vinay; Sopori, Bhushan; Ravindra, Nuggehalli; Misra, Durgamadhab
err分享
err收藏
Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-01-17
err10
PREAI
errRahim, N.; Misra, D.
err分享
err收藏
TiN/HfO2/SiO2/Si gate stack breakdown:: Contribution of HfO2 and interfacial SiO2 layer
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2008-01-01
err10
PREAI
errRahim, N.; Misra, D.
err分享
err收藏
Role of interfacial layer on breakdown of TiN/High-K gate stacks
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2007-01-01
err8
PREAI
errChowdhury, N. A.; Misra, D.; Bersuker, G.; Young, C.; Choi, R.
err分享
err收藏
Charge trapping at deep states in Hf-silicate based high-κ gate dielectrics
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2007-01-01
err61
PREAI
errChowdhury, N. A.; Misra, D.
err分享
err收藏
1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates绝缘体上Ge衬底上具有HfO2和金属栅极的mosfet的1/f噪声性能
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2006-08-01
err20
PREAI
errSrinivasan, P.; Simoen, E.; De Jaeger, B.; Claeys, C.; Misra, D.
err分享
err收藏
Interface characterization of high-k dielectrics on Ge substrates
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2006-08-01
err30
PREAI
errMisra, D.; Garg, R.; Srinivasan, P.; Rahim, N.; Chowdhury, N. A.
err分享
err收藏
Ge MOS capacitors with thermally evaporated HfO2 as gate dielectric
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2006-01-01
err17
PREAI
errGarg, R; Misra, D; Swain, PK
err分享
err收藏
Effect of nitridation on low-frequency (1/f) noise in n- and p-MOSFETS with HFO2 gate dielectrics
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2006-01-01
err15
PREAI
errSrinivasan, P.; Simoen, E.; Rittersma, Z. M.; Deweerd, W.; Pantisano, L.; Claeys, C.; Misra, D.
err分享
err收藏
Low-frequency (1/f) noise performance of n- and p-MOSFETs with poly-Si/Hf-based gate dielectrics
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2006-01-01
err23
PREAI
errSrinivasan, P; Simoen, E; Pantisano, L; Claeys, C; Misra, D
err分享
err收藏
Charge trapping and interface characteristics of thermally evaporated HfO2
errAPPLIED PHYSICS LETTERS
IF3.6
err2004-10-11
err34
PREAI
errChowdhury, NA; Garg, R; Misra, D
err分享
err收藏
Electrical characteristics of thermally evaporated HfO2
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2004-01-01
err13
errOAAI
errGarg, R; Chowdhury, NA; Bhaskaran, M; Swain, PK; Misra, D
err分享
err收藏
Interface hardening with deuterium implantation
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2002-01-01
err10
PREAI
errMisra, D; Jarwal, RK
err分享
err收藏
Metal-oxide-silicon diodes on deuterium-implanted silicon substrate
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-05-22
err5
PREAI
errMisra, D; Jarwal, RK
err分享
err收藏

研究方向

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合作学者
合作期刊
M
Madhu Bhaskaran
H 指数: 64 · 论文数: 382
G
G. Bersuker
H 指数: 54 · 论文数: 590
E
Eddy Simoen
H 指数: 49 · 论文数: 1.6K
R
Rino Choi
H 指数: 45 · 论文数: 385
C
Cor Claeys
H 指数: 37 · 论文数: 1.1K
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