Eddy Simoen - Publications, H-index & Citations

Eddy Simoen

Ghent University

49H指数

1.6K论文数

1.3W被引数

收录论文 88

发表时间

Novel Methodology for MOSFET Parameter Extraction From Weak to Strong Inversion Range in Ohmic Operation at Very Cryogenic Temperatures

IEEE Transactions on Electron Devices

IF3.2

2025-12-18

PREAI

Bogdan Cretu; Abderrahim Tahiat; Anabela Veloso; Eddy Simoen

Geometrical and thermal effects on mobility and analog parameters of AlGaN/GaN HEMTs on silicon substrates 硅基AlGaN/GaN HEMTs的几何和热效应对其迁移率和模拟参数的影响

Solid-State Electronics

IF1.4

2025-12-01

PREAI

de Andrade, Maria Gloria Cano; Baptista Junior, Braz; Panzo, Eduardo Canga; Doria, Rodrigo T.; Trevisoli, Renan; Simoen, Eddy

Toward a Self-Consistent Y-Function-Based Methodology for MOSFET Parameter Extraction From Weak to Strong Inversion in Ohmic Operation 朝向一种自洽的基于Y-Function的方法，用于Ohmic工作模式下从弱反型到强反型的MOSFET参数提取

IEEE Transactions on Electron Devices

IF3.2

2025-11-25

PREAI

Bogdan Cretu; Abderrahim Tahiat; Anabela Veloso; Eddy Simoen

Mitigating Dark Current for High-Performance Near-Infrared Organic Photodiodes via Charge Blocking and Defect Passivation 通过电荷阻挡和缺陷钝化减轻高性能近红外有机光电二极管的暗电流

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-04-06

PREAI

Yang, Weitao; Qu, Weiming; Georgitzikis, Epimitheas; Simoen, Eddy; Serron, Jill; Lee, Jiwon; Lieberman, Itai; Cheyns, David; Malinowski, Pawel; Genoe, Jan; Chen, Hongzheng; Heremans, Paul

Defect profiling in FEFET Si:HfO2 layers

APPLIED PHYSICS LETTERS

IF3.6

2020-11-17

OAAI

O'Sullivan, B. J.; Putcha, V; Izmailov, R.; Afanas'ev, V; Simoen, E.; Jung, T.; Higashi, Y.; Degraeve, R.; Truijen, B.; Kaczer, B.; Ronchi, N.; McMitchell, S.; Banerjee, K.; Clima, S.; Breuil, L.; Van den Bosch, G.; Linten, D.; Van Houdt, J.

Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates

PHYSICAL REVIEW APPLIED

IF4.4

2020-08-31

PREAI

Syshchyk, O.; Hsu, B.; Yu, H.; Motsnyi, V.; Vais, A.; Kunert, B.; Mols, Y.; Alcotte, R.; Puybaret, R.; Waldron, N.; Soussan, P.; Boulenc, P.; Karve, G.; Simoen, E.; Collaert, N.; Puers, B.; Van Hoof, C.

p-n junction diagnostics to determine surface and bulk generation/recombination properties of silicon substrates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Claeys, C; Poyai, A; Simoen, E; Czerwinski, A; Katcki, J

Noise as a diagnostic tool for semiconductor material and device characterization

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Claeys, C; Simoen, E

Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Rotondaro, ALP; Hurd, TQ; Kaniava, A; Vanhellemont, J; Simoen, E; Heyns, MM; Claeys, C

Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

OAAI

Gramenova, E; Jansen, P; Simoen, E; Vanhellemont, J; Dupas, L; Deferm, L

The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-09-12

PREAI

Hsu, Po-Chun (Brent); Simoen, Eddy; Merckling, Clement; Eneman, Geert; Mols, Yves; Han, Han; Alian, AliReza; Collaert, Nadine; Heyns, Marc

Structural Variation and Its Influence on the 1/f Noise of a-Si1-xRux Thin Films Embedded with Nanocrystals

CHINESE PHYSICS LETTERS

IF4.2

2019-02-04

PREAI

Wang, Chong; Zhong, Hao; Simoen, Eddy; Jiang, Xiang-Dong; Jiang, Ya-Dong; Li, Wei

Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

APPLIED PHYSICS LETTERS

IF3.6

2018-12-03

OAAI

Gupta, S.; Simoen, E.; Loo, R.; Smets, Q.; Verhulst, A. S.; Lauwaert, J.; Vrielinck, H.; Heyns, M.

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

APPLIED PHYSICS LETTERS

IF3.6

2018-11-07

PREAI

Gupta, S.; Shimura, Y.; Richard, O.; Douhard, B.; Simoen, E.; Bender, H.; Nakatsuka, O.; Zaima, S.; Loo, R.; Heyns, M.

Detailed structural and electrical characterization of plated crystalline silicon solar cells

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2018-09-01

OAAI

Dang, C.; Labie, R.; Simoen, E.; Poortmans, J.

Electrical properties of extended defects in strain relaxed GeSn 应变松弛GeSn中扩展缺陷的电学性质

APPLIED PHYSICS LETTERS

IF3.6

2018-07-09

OAAI

Gupta, Somya; Simoen, Eddy; Loo, Roger; Shimura, Yosuke; Porret, Clement; Gencarelli, Federica; Paredis, Kristof; Bender, Hugo; Lauwaert, Johan; Vrielinck, Henk; Heyns, Marc

Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-05-17

PREAI

Gupta, Somya; Simoen, Eddy; Loo, Roger; Madia, Oreste; Lin, Dennis; Merckling, Clement; Shimura, Yosuke; Conard, Thierry; Lauwaert, Johan; Vrielinck, Henk; Heyns, Marc

On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

APPLIED PHYSICS LETTERS

IF3.6

2016-02-24

PREAI

Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan; Pourtois, Geoffrey; Simoen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Iacovo, Serena; Stesmans, Andre; Loo, Roger; Vandervorst, Wilfried

Electronic properties of manganese impurities in germanium

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-03-25

OAAI

Lauwaert, J.; Segers, S. H.; Moens, F.; Opsomer, K.; Clauws, P.; Callens, F.; Simoen, E.; Vrielinck, H.

Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

APPLIED PHYSICS LETTERS

IF3.6

2014-11-18

PREAI

Smets, Quentin; Verhulst, Anne S.; Martens, Koen; Lin, Han Chung; El Kazzi, Salim; Verreck, Devin; Simoen, Eddy; Collaert, Nadine; Thean, Aaron; Raskin, Jean-Pierre; Heyns, Marc M.

研究方向