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K

Koji Sueoka

Okayama Prefectural University

23H指数
325论文数
1.8K被引数
收录论文 29
发表时间
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Density Functional Study of Sn Solubility and Atomic Configuration in SiSn and GeSn Alloys锡在SiSn和GeSn合金中的溶解度及原子构型的密度泛函研究
errPhysica Status Solidi A-Applications and Materials Science
IF1.9
err2026-05-17
err0
PREAI
errSueoka, Koji; Bekku, Hibiki; Noda, Yusuke
err分享
err收藏
Revisiting single-crystal silicon oxidation: A comprehensive analysis of crystal structural transformation to SiO2 (Vol 14, 075217, 2024)
errAIP ADVANCES
IF1.4
err2025-11-01
err0
PREAI
errKamiyama, Eiji; Sueoka, Koji
err分享
err收藏
Genetic-algorithm-combined density functional theory calculations for investigating atomic properties of Si-Ge alloys
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-11-01
err2
PREAI
errBekku, Hibiki; Noda, Yusuke; Sueoka, Koji
err分享
err收藏
Atomic structures and stability of finite-size extended interstitial defects in silicon: Large-scale molecular simulations with a neural-network potential
errSCRIPTA MATERIALIA
IF5.6
err2022-06-01
err5
errOAAI
errOhbitsu, Masato; Yokoi, Tatsuya; Noda, Yusuke; Kamiyama, Eiji; Ushiro, Takuto; Nagakura, Hiroki; Sueoka, Koji; Matsunaga, Katsuyuki
err分享
err收藏
Preferential Growth Mode of Large-Sized Vacancy Clusters in Silicon: A Neural-Network Potential and First-Principles Study
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2021-11-27
err6
PREAI
errUshiro, Takuto; Yokoi, Tatsuya; Noda, Yusuke; Kamiyama, Eiji; Ohbitsu, Masato; Nagakura, Hiroki; Sueoka, Koji; Matsunaga, Katsuyuki
err分享
err收藏
Investigation of the mechanical strength of hydrogen-annealed Czochralski silicon wafers
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err5
PREAI
errSueoka, K; Akatsuka, M; Katahama, H; Adachi, N
err分享
err收藏
Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err19
PREAI
errOno, T; Asayama, E; Horie, H; Hourai, M; Sueoka, K; Tsuya, H; Rozgonyi, GA
err分享
err收藏
Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err7
PREAI
errOno, T; Romanowski, A; Asayama, E; Horie, H; Sueoka, K; Tsuya, H; Rozgonyi, GA
err分享
err收藏
Dependence of mechanical strength of Czochralski silicon wafers on the temperature of oxygen precipitation annealing
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err34
PREAI
errSueoka, K; Akatsuka, M; Katahama, H; Adachi, N
err分享
err收藏
Calculation of slip length in 300 mm silicon wafers during thermal processes
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err9
PREAI
errAkatsuka, M; Sueoka, K; Katahama, H; Adachi, N
err分享
err收藏
First-principles calculation of atomic configurations of carbon and tin near the surface of a silicon thin film used for solar cells
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2017-06-01
err1
PREAI
errTadano, Kai; Sueoka, Koji
err分享
err收藏
The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2016-03-01
err13
errOAAI
errKamiyama, Eiji; Matsutani, Ryo; Suwa, Ryo; Vanhellemont, Jan; Sueoka, Koji
err分享
err收藏
Density functional theory calculations for estimation of gettering sites of C, H, intrinsic point defects and related complexes in Si wafers
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2016-03-01
err30
PREAI
errShirasawa, Sho; Sueoka, Koji; Yamaguchi, Tadashi; Maekawa, Kazuyoshi
err分享
err收藏
Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-02-28
err13
PREAI
errKamiyama, E.; Vanhellemont, J.; Sueoka, K.; Araki, K.; Izunome, K.
err分享
err收藏
Effect of dangling bonds of ultra-thin silicon film surface on electronic states of internal atoms
errAPPLIED SURFACE SCIENCE
IF6.9
err2012-04-01
err8
PREAI
errKamiyama, Eiji; Sueoka, Koji
err分享
err收藏
Long-Range Interaction between H and (B or P) Dopant Atoms in Silicon Crystals Investigated by First Principles Calculation
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2012-01-01
err2
errOAAI
errKamiyama, Eiji; Sueoka, Koji
err分享
err收藏
Simulation of STM Images on a Flat Si (110)-(8x2) Surface Using Density Functional Theory
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2012-01-01
err3
PREAI
errNagasawa, Takahiro; Sueokaz, Koji
err分享
err收藏
Impact of the Formation of Dimer Structures at the Surface on the Internal Atoms of Si Thin Film
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2010-01-01
err4
PREAI
errKamiyama, Eiji; Sueoka, Koji
err分享
err收藏
Ab-initio simulation of self-interstitial in germanium锗中自填隙的Ab-initio模拟
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2008-10-01
err20
PREAI
errSpiewak, P.; Vanhellemont, J.; Sueoka, K.; Kurzydlowski, K. J.; Romandic, I.
err分享
err收藏
Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals锗晶体中本征点缺陷，间隙氧和空位或氧簇的从头算研究
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2006-08-01
err38
PREAI
errSueoka, K.; Vanhellemont, J.
err分享
err收藏

研究方向

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合作学者
合作期刊
K
Katsuyuki Matsunaga
H 指数: 42 · 论文数: 272
T
Tadashi Yamaguchi
H 指数: 36 · 论文数: 672
G
G. A. Rozgonyi
H 指数: 36 · 论文数: 333
J
Jan Vanhellemont
H 指数: 33 · 论文数: 478
H
Hideki Tsuya
H 指数: 20 · 论文数: 63
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