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H.C. Wen

technology innovation center for natural resources monitoring and evaluation of beibu gulf economic zone

17H指数
62论文数
1.1K被引数
收录论文 18
发表时间
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Effect of mobile ions on ultrathin silicon-on-insulator-based sensors
err2010-07-20
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PREAI
errFernandes, P. G.; Seitz, O.; Chapman, R. A.; Stiegler, H. J.; Wen, H. -C.; Chabal, Y. J.; Vogel, E. M.
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In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm
err2008-06-02
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PREAI
errKoveshnikov, S.; Goel, N.; Majhi, P.; Wen, H.; Santos, M. B.; Oktyabrsky, S.; Tokranov, V.; Kambhampati, R.; Moore, R.; Zhu, F.; Lee, J.; Tsai, W.
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Internal photoemission spectroscopy of [TaN/TaSiN] and [TaN/TaCN] metal stacks on SiO2 and [HfO2/SiO2] dielectric stack
err2008-03-06
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PREAI
errNguyen, N. V.; Xiong, H. D.; Suehle, J. S.; Kirillov, O. A.; Vogel, E. M.; Majhi, P.; Wen, H. -C.
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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
err2008-03-04
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PREAI
errKirsch, P. D.; Sivasubramani, P.; Huang, J.; Young, C. D.; Quevedo-Lopez, M. A.; Wen, H. C.; Alshareef, H.; Choi, K.; Park, C. S.; Freeman, K.; Hussain, M. M.; Bersuker, G.; Harris, H. R.; Majhi, P.; Choi, R.; Lysaght, P.; Lee, B. H.; Tseng, H. -H.; Jammy, R.; Boescke, T. S.; Lichtenwalner, D. J.; Jur, J. S.; Kingon, A. I.
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Band offsets between amorphous LaAlO3 and In0.53Ga0.47As
err2007-09-13
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PREAI
errGoel, N.; Tsai, W.; Garner, C. M.; Sun, Y.; Pianetta, P.; Warusawithana, M.; Schlom, D. G.; Wen, H.; Gaspe, C.; Keay, J. C.; Santos, M. B.; Goncharova, L. V.; Garfunkel, E.; Gustafsson, T.
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Work function engineering using lanthanum oxide interfacial layers
err2006-12-04
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PREAI
errAlshareef, H. N.; Quevedo-Lopez, M.; Wen, H. C.; Harris, R.; Kirsch, P.; Majhi, P.; Lee, B. H.; Jammy, R.; Lichtenwalner, D. J.; Jur, J. S.; Kingon, A. I.
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Effective work function modification of atomic-layer-deposited-TaN film by capping layer覆盖层对原子层沉积TaN薄膜的有效功函数修饰
err2006-07-21
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PREAI
errChoi, K.; Alshareef, H. N.; Wen, H. C.; Harris, H.; Luan, H.; Senzaki, Y.; Lysaght, P.; Majhi, P.; Lee, B. H.
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Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor
err2006-04-07
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PREAI
errLuan, H; Alshareef, HN; Harris, HR; Wen, HC; Choi, K; Senzaki, Y; Majhi, P; Lee, BH
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Metal gate work function engineering using AlNx interfacial layers
err2006-03-16
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PREAI
errAlshareef, HN; Luan, HF; Choi, K; Harris, HR; Wen, HC; Quevedo-Lopez, MA; Majhi, P; Lee, BH
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Composition dependence of the work function of Ta1-xAlxNy metal gates - art. no. 072108
err2006-02-16
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PREAI
errAlshareef, HN; Choi, K; Wen, HC; Luan, H; Harris, H; Senzaki, Y; Majhi, P; Lee, BH; Jammy, R; Aguirre-Tostado, S; Gnade, BE; Wallace, RM
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Evaluation of tantalum silicon alloy systems as gate electrodes
err2005-11-18
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PREAI
errLuan, H; Alshareef, HN; Lysaght, PS; Harris, HR; Wen, HC; Choi, K; Senzaki, Y; Majhi, P; Lee, BH
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Modulation of the work function of silicon gate electrode using thin TaN interlayers
err2005-07-27
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PREAI
errAlshareef, HN; Wen, HC; Harris, HR; Choi, K; Luan, HF; Lysaght, P; Majhi, P; Lee, BH; El-Bouanani, M; Ukride, V
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