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R

R. Gassilloud

universite grenoble alpes and cea

16H指数
104论文数
975被引数
收录论文 17
发表时间
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Growth of c-axis AlN sputtered films on silicon-based substrates using 2D-TMD as nucleation layer使用二维TMD作为成核层在硅基衬底上生长c轴取向的AlN溅射薄膜
errjournal of physics: materials
IF0
err2026-02-20
err0
errOAAI
errJ Patouillard; N Vaxelaire; M Bernard; R Gassilloud; A Dussaigne; B Hyot; S Cadot; N Bernier; A Mantoux; E Blanquet; C Raynaud; F Gianesello
err分享
err收藏
Pursuing the FD-SOI roadmap down to 10 nm and 7 nm nodes for high energy efficient, low power and RF/mmWave applications
errSOLID-STATE ELECTRONICS
IF1.4
err2025-10-01
err1
errOAAI
errFenouillet-Beranger, C.; Rozeau, O.; Chouk, R.; Cueto, O.; Royet, A. -S; Charbonneau, M.; Mohamad, B.; Brevard, L.; Chalupa, Z.; Bond, A.; Baudin, F.; Brunet, L.; Rodriguez, P.; Gassilloud, R.; Mota-Frutuoso, T.; Pimenta-Barros, P.; Beaurepaire, S.; Lapras, V.; Kanyandekwe, J.; Petitprez, E.; Brianceau, P.; Segaud, R.; Verrun, S.; Barge, D.; Chausse, P.; Billoint, O.; Vandendaele, W.; Romanjek, K.; Loup, V.; Hartmann, J-M; Magalhaes-Lucas, A.; Garnier, G.; Souhaite, A.; Cibrario, G.; Duriez, B.; Poiroux, T.; Cyrille, M-C; Noguet, D.
err分享
err收藏
Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films溅射-AlN/二维MoS2籽晶层的 thermochemical treatment：一种制备高度c轴取向AlN薄膜的新 elaboration process
errJOURNAL OF PHYSICS-MATERIALS
IF4.3
err2025-04-03
err0
errOAAI
errPatouillard, J.; Gassilloud, R.; Mercier, F.; Dussaigne, A.; Hyot, B.; Bernard, M.; Cadot, S.; Gauthier, N.; Vaxelaire, N.; Bernier, N.; Martin, F.; Raynaud, C.; Gianesello, F.; Mantoux, A.; Blanquet, E.
err分享
err收藏
Area selective deposition using alternate deposition and etch super-cycle strategies
errDALTON TRANSACTIONS
IF3.3
err2022-01-01
err12
PREAI
errBonvalot, Marceline; Vallee, Christophe; Mannequin, Cedric; Jaffal, Moustapha; Gassilloud, Remy; Posseme, Nicolas; Chevolleau, Thierry
err分享
err收藏
X-ray reflectometry and grazing-incidence X-ray fluorescence characterization of innovative electrodes for tantalum-based resistive random access memories (vol 2018, pg 71, 2019)
errSPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
IF3.8
err2019-10-01
err0
errOAAI
errNolot, E.; Caby, B.; Gassilloud, R.; Veillerot, M.; Eichert, D.
err分享
err收藏
Topographically selective deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-01-28
err14
PREAI
errChaker, A.; Vallee, C.; Pesce, V.; Belahcen, S.; Vallat, R.; Gassilloud, R.; Posseme, N.; Bonvalot, M.; Bsiesy, A.
err分享
err收藏
Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories
errSCIENTIFIC REPORTS
IF3.9
err2018-12-18
err7
errOAAI
errMendes, M. Kazar; Martinez, E.; Ablett, J. M.; Veillerot, M.; Gassilloud, R.; Bernard, M.; Renault, O.; Rueff, J. P.; Barrett, N.
err分享
err收藏
X-ray reflectometry and grazing-incidence X-ray fluorescence characterization of innovative electrodes for tantalum-based resistive random access memories
errSPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
IF3.8
err2018-11-01
err7
PREAI
errNolot, E.; Caby, B.; Gassilloud, R.; Veillerot, M.; Eichert, D.
err分享
err收藏
Forming mechanism of Te-based conductive-bridge memories
errAPPLIED SURFACE SCIENCE
IF6.9
err2018-02-01
err9
errOAAI
errMendes, M. Kazar; Martinez, E.; Marty, A.; Veillerot, M.; Yamashita, Y.; Gassilloud, R.; Bernard, M.; Renault, O.; Barrett, N.
err分享
err收藏
Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
errAPPLIED SURFACE SCIENCE
IF6.9
err2014-06-01
err31
PREAI
errPiallat, Fabien; Beugin, Virginie; Gassilloud, Remy; Dussault, Laurent; Pelissier, Bernard; Leroux, Charles; Caubet, Pierre; Vallee, Christophe
err分享
err收藏
PECVD RF versus dual frequency: an investigation of plasma influence on metal-organic precursors' decomposition and material characteristics
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2014-04-16
err7
errOAAI
errPiallat, F.; Vallee, C.; Gassilloud, R.; Michallon, P.; Pelissier, B.; Caubet, P.
err分享
err收藏
A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-04-07
err6
PREAI
errGassilloud, R.; Maunoury, C.; Leroux, C.; Piallat, F.; Saidi, B.; Martin, F.; Maitrejean, S.
err分享
err收藏
Electrochemical trench etching of silicon triggered via mechanical nanocontacts通过机械纳米接触触发硅的电化学沟槽蚀刻
errELECTROCHIMICA ACTA
IF5.6
err2007-12-01
err1
PREAI
errGassilloud, R.; Schmuki, P.; Michler, J.
err分享
err收藏
Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-02-12
err48
PREAI
errVincent, B.; Damlencourt, J. -F.; Delaye, V.; Gassilloud, R.; Clavelier, L.; Morand, Y.
err分享
err收藏
Plastic deformation modes of gallium arsenide in nanoindentation and nanoscratching
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-01-16
err46
errOAAI
errWasmer, K.; Parlinska-Wojtan, M.; Gassilloud, R.; Pouvreau, C.; Tharian, J.; Micher, J.
err分享
err收藏
Selective etching of n-InP(100) triggered at surface dislocations induced by nanoscratching纳米划痕引起的表面位错引发的n-inp (100) 的选择性刻蚀
errELECTROCHIMICA ACTA
IF5.6
err2006-02-01
err13
PREAI
errGassilloud, R; Michler, J; Ballif, C; Gasser, P; Schmuki, P
err分享
err收藏
Cleavage fracture of brittle semiconductors from the nanometer to the centimeter scale
errADVANCED ENGINEERING MATERIALS
IF3.3
err2005-05-31
err52
errOAAI
errWasmer, K; Ballif, C; Gassilloud, R; Pouvreau, C; Rabe, R; Michler, J; Breguet, JM; Solletti, JM; Karimi, A; Schulz, D
err分享
err收藏

研究方向

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合作学者
合作期刊
P
Patrik Schmuki
H 指数: 120 · 论文数: 933
C
Christophe Ballif
H 指数: 96 · 论文数: 906
A
Alan M. Bond
H 指数: 78 · 论文数: 1.5K
J
Johann Michler
H 指数: 67 · 论文数: 733
C
C. Vallée
H 指数: 55 · 论文数: 533
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