.png){kind=icon}
返回
Topographically selective deposition
.png){kind=icon}
PRE
AI
DOI：10.1063/1.5065801.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
In this paper, we present a topographically Selective Deposition process which allows the vertical only coating of three-dimensional (3D) nano-structures. This process is based on the alternate use of plasma enhanced atomic layer deposition (PEALD) and sputtering carried out in a PEALD reactor equipped with a radio-frequency substrate biasing kit. A so-called super-cycle has been conceived, which consists of 100 standard deposition cycles followed by an anisotropic argon sputtering induced by the application of a 13.56 MHz biasing waveform to the substrate holder in the PEALD chamber. This sputtering step removes the deposited material on horizontal surfaces only, and the sequential deposition/etch process allows effective deposition on vertical surfaces only. Thus, it opens up a route for topographically selective deposition, which can be of interest for the fabrication of 3D vertical Metal-Insulator-Metal devices. (C) Published under license by AIP Publishing.
Keyword:
ATOMIC LAYER DEPOSITION
METAL-OXIDES
HIGH-QUALITY
ALD
NANOSTRUCTURES
GROWTH
ION
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
3.6
论文数:
10.4W
被引数:
17.8W
机构
引用论文
分享收藏Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies在平面和3D衬底形貌上进行等离子体增强原子层沉积期间，通过衬底偏置调整氧化物和氮化物的材料特性
OAAI
OAAI分享收藏Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle在ABC型循环中使用乙酰丙酮作为化学选择性抑制剂进行SiO2的区域选择性原子层沉积.png)
ACS NANOOAAI
ACS NANOIF16
OAAI分享收藏Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics
PREAI
分享收藏Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates
PREAI
分享收藏
查看更多内容