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A

A. Bsiesy

universite grenoble alpes (uga)

23H指数
155论文数
2.8K被引数
收录论文 19
发表时间
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Effect of TiN electrodes and Gd-doping on HfO2 structural propertiesTiN电极和Gd掺杂对HfO2结构性质的影响
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2024-12-17
err0
PREAI
errAbdallah, M. M.; Skopin, E. V.; Fillot, F.; Constantin, D.; Abusaa, M.; Bsiesy, A.
err分享
err收藏
Analog memristive devices based on La2NiO4+ δ as synapses for spiking neural networks
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2023-12-08
err3
PREAI
errKhuu, Thoai-Khanh; Koroleva, Aleksandra; Degreze, Arnaud; Vatajelu, Elena-Ioana; Lefevre, Gauthier; Jimenez, Carmen; Blonkowski, Serge; Jalaguier, Eric; Bsiesy, Ahmad; Burriel, Monica
err分享
err收藏
Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-07-20
err2
errOAAI
errAlrifai, L.; Skopin, E. V.; Guillaume, N.; Gonon, P.; Bsiesy, A.
err分享
err收藏
La2NiO4+δ-Based Memristive Devices Integrated on Si-Based Substrates
errADVANCED MATERIALS TECHNOLOGIES
IF6.2
err2022-07-30
err3
errOAAI
errKhuu, Thoai-Khanh; Lefevre, Gauthier; Jimenez, Carmen; Roussel, Herve; Riaz, Adeel; Blonkowski, Serge; Jalaguier, Eric; Bsiesy, Ahmad; Burriel, Monica
err分享
err收藏
Structural Defects Improve the Memristive Characteristics of Epitaxial La0.8Sr0.2MnO3-Based Devices
errADVANCED MATERIALS INTERFACES
IF4.4
err2022-07-11
err7
errOAAI
errMoncasi, Carlos; Lefevre, Gauthier; Villeger, Quentin; Rapenne, Laetitia; Roussel, Herve; Bsiesy, Ahmad; Jimenez, Carmen; Burriel, Monica
err分享
err收藏
Sub-10-nm ferroelectric Gd-doped HfO2 layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-04-26
err11
PREAI
errSkopin, E., V; Guillaume, N.; Alrifai, L.; Gonon, P.; Bsiesy, A.
err分享
err收藏
TiN/Gd:HfO2/TiN capacitors grown by PEALD showing high endurance ferroelectric switching
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-12-21
err12
PREAI
errBelahcen, S.; Francois, T.; Grenouillet, L.; Bsiesy, A.; Coignus, J.; Bonvalot, M.
err分享
err收藏
Topographically selective deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-01-28
err14
PREAI
errChaker, A.; Vallee, C.; Pesce, V.; Belahcen, S.; Vallat, R.; Gassilloud, R.; Posseme, N.; Bonvalot, M.; Bsiesy, A.
err分享
err收藏
Fabrication of monodisperse magnetic nanoparticles released in solution using a block copolymer template
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2017-06-30
err2
PREAI
errMorcrette, Melissa; Ortiz, Guillermo; Tallegas, Salome; Joisten, Helene; Tiron, Raluca; Baron, Thierry; Hou, Yanxia; Lequien, Stephane; Bsiesy, Ahmad; Dieny, Bernard
err分享
err收藏
High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-06-12
err7
errOAAI
errChaker, A.; Gonon, P.; Vallee, C.; Bsiesy, A.
err分享
err收藏
Reliability of HfO2 metal-insulator-metal capacitors under AC stress
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2016-03-21
err4
PREAI
errKassmi, M.; Jomni, F.; Gonon, P.; Khaldi, O.; Latu-Romain, L.; Mannequin, C.; Bsiesy, A.; Basrour, S.; Yangui, B.
err分享
err收藏
Control of 10 nm scale cylinder orientation in self-organized sugar-based block copolymer thin films
errNANOSCALE
IF5.1
err2013-01-01
err59
PREAI
errOtsuka, Issei; Tallegas, Salome; Sakai, Yoko; Rochas, Cyrille; Halila, Sami; Fort, Sebastien; Bsiesy, Ahmad; Baron, Thierry; Borsali, Redouane
err分享
err收藏
Two-dimensional dopant profiling of silicon with submicron resolution using near field optics on silicon/electrolyte contacts
errAPPLIED SURFACE SCIENCE
IF6.9
err2008-02-01
err0
PREAI
errDjebbouri, Mustapha; Bertin, Francois; Kesri, Naziha; Bsiesy, Ahmad
err分享
err收藏
Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-05-11
err11
PREAI
errKanoun, M.; Benabderrahmane, R.; Duluard, C.; Baraduc, C.; Bruyant, N.; Bsiesy, A.; Achard, H.
err分享
err收藏
Method to assess the grain crystallographic orientation with a submicronic spatial resolution using Kelvin probe force microscope
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-10-10
err44
PREAI
errGaillard, Nicolas; Gros-Jean, Mickael; Mariolle, Denis; Bertin, Francois; Bsiesy, Ahmad
err分享
err收藏
In situ electric field simulation in metal/insulator/metal capacitors
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-09-26
err64
PREAI
errGaillard, Nicolas; Pinzelli, Luc; Gros-Jean, Mickael; Bsiesy, Ahmad
err分享
err收藏
Light-induced porous silicon photoluminescence quenching光致多孔硅光致发光猝灭
errJOURNAL OF LUMINESCENCE
IF3.6
err1999-09-01
err14
PREAI
errGelloz, B; Bsiesy, A; Herino, R
err分享
err收藏
Carrier transport mechanisms in porous silicon in contact with a liquid phase: a diffusion process与液相接触的多孔硅中的载流子传输机制: 扩散过程
errAPPLIED SURFACE SCIENCE
IF6.9
err1998-09-01
err23
PREAI
errGelloz, B; Bsiesy, A
err分享
err收藏
Voltage-tunable photo- and electroluminescence of porous silicon多孔硅的电压可调光致发光和电致发光
errJOURNAL OF LUMINESCENCE
IF3.6
err1996-10-01
err16
PREAI
errBsiesy, A; Vial, JC
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
B
B. Diény
H 指数: 70 · 论文数: 627
C
Cyrille Rochas
H 指数: 57 · 论文数: 336
C
C. Vallée
H 指数: 55 · 论文数: 533
R
Rédouane Borsali
H 指数: 54 · 论文数: 411
T
T. Baron
H 指数: 45 · 论文数: 616
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