Mohamed Al Khalfioui - Publications, H-index & Citations

Mohamed Al Khalfioui

centre national de la recherche scientifique (cnrs)

12H指数

69论文数

354被引数

收录论文 14

发表时间

Defect formation energy of impurities in 2D materials: How does data engineering shape machine learning model selection?杂质在二维材料中的缺陷形成能：数据工程如何影响机器学习模型选择？

Materials Today Physics

IF9.7

2026-01-13

OAAI

A. El Alouani; M. Al Khalfioui; A. Michon; S. Vézian; P. Boucaud; M.T. Dau

Van der Waals Epitaxy of Weyl-Semimetal T d-WTe 2

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-04-10

OAAI

Llopez, Alexandre; Leroy, Frederic; Tagne-Kaegom, Calvin; Croes, Boris; Michon, Adrien; Mastropasqua, Chiara; Al Khalfioui, Mohamed; Curiotto, Stefano; Mueller, Pierre; Saul, Andres; Kierren, Bertrand; Kremer, Geoffroy; Le Fevre, Patrick; Bertran, Francois; Fagot-Revurat, Yannick; Cheynis, Fabien

Descriptor engineering in machine learning regression of electronic structure properties for 2D materials

SCIENTIFIC REPORTS

IF3.9

2023-04-03

OAAI

Dau, Minh Tuan; Al Khalfioui, Mohamed; Michon, Adrien; Reserbat-Plantey, Antoine; Vezian, Stephane; Boucaud, Philippe

Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN

APPLIED PHYSICS LETTERS

IF3.6

2023-02-27

OAAI

Miller, J. D.; Trodahl, H. J.; Al Khalfioui, M.; Vezian, S.; Ruck, B. J.

Enhanced Sm spin projection in GdxSm1-xN

PHYSICAL REVIEW B

IF3.7

2022-11-23

OAAI

Miller, J. D.; McNulty, J. F.; Ruck, B. J.; Al Khalfioui, M.; Vezian, S.; Suzuki, M.; Osawa, H.; Kawamura, N.; Trodahl, H. J.

Role of In in Hydrogenation of N-Related Complexes in GaInNAs

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2019-03-22

PREAI

Mou, Tong; Li, Steve; Brown, Collin R.; Whiteside, Vincent R.; Hossain, Khalid; Al Khalfioui, Mohamed; Leroux, Mathieu; Sellers, Ian R.; Wang, Bin

Temperature-Induced Four-fold-on-Six-fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AIN (vol 16, pg 6454, 2016)

CRYSTAL GROWTH & DESIGN

IF3.4

2017-06-30

PREAI

Chan, Jay R.; Vezian, Stephane; Trodahl, Joe; Al Khalfioui, Mohamed; Damilano, Benjamin; Natali, Franck

Ultraviolet light emitting diodes using III-N quantum dots

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-11-01

PREAI

Brault, Julien; Matta, Samuel; Thi-Huong Ngo; Rosales, Daniel; Leroux, Mathieu; Damilano, Benjamin; Al Khalfioui, Mohamed; Tendille, Florian; Chenot, Sebastien; De Mierry, Philippe; Massies, Jean; Gil, Bernard

Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AIN

CRYSTAL GROWTH & DESIGN

IF3.4

2016-10-05

PREAI

Chan, Jay R.; Vezian, Stephane; Trodahl, Joe; Al Khalfioui, Mohamed; Damilano, Benjamin; Natali, Franck

High temperature electrical transport study of Si-doped AlN

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2016-10-01

PREAI

Contreras, Sylvie; Konczewicz, Leszek; Ben Messaoud, Jaweb; Peyre, Herve; Al Khalfioui, Mohamed; Matta, Samuel; Leroux, Mathieu; Damilano, Benjamin; Brault, Julien

Improved performance in GaInNAs solar cells by hydrogen passivation

APPLIED PHYSICS LETTERS

IF3.6

2015-04-07

PREAI

Fukuda, M.; Whiteside, V. R.; Keay, J. C.; Meleco, A.; Sellers, I. R.; Hossain, K.; Golding, T. D.; Leroux, M.; Al Khalfioui, M.

Probing the nature of carrier localization in GaInNAs epilayers by optical methods

APPLIED PHYSICS LETTERS

IF3.6

2013-07-03

PREAI

Tsai, Y.; Barman, B.; Scrace, T.; Lindberg, G.; Fukuda, M.; Whiteside, V. R.; Keay, J. C.; Johnson, M. B.; Sellers, I. R.; Al Khalfioui, M.; Leroux, M.; Weinstein, B. A.; Petrou, A.

Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2008-07-04

OAAI

Montes, M.; Hierro, A.; Ulloa, J. M.; Guzman, A.; Damilano, B.; Hugues, M.; Al Khalfioui, M.; Duboz, J-Y; Massies, J.

Anemometer based on Seebeck effect

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2003-10-01

PREAI

Al Khalfioui, M; Michez, A; Giani, A; Boyer, A; Foucaran, A

研究方向