Hongji Qi - Publications, H-index & Citations

Hongji Qi

Shanghai Institute of Optics and Fine Mechanics

24H指数

198论文数

2.0K被引数

收录论文 70

发表时间

Photonic-Electronic Dual-Passivated Ultrafast β-Ga2O3 SBUV Photodiode 光电双钝化超快β-Ga2O3 SBUV光电二极管

Small

IF12.1

2026-07-28

PREAI

Naiji Zhang; Zhao Wang; Zhuogeng Lin; Siqi Zhu; Kaikai Duan; Duanyang Chen; Hongji Qi; Wei Zheng

β-Ga₂O₃ Vertical U-Trench MOSFET With Nitrogen-Doped Current Blocking Layer Grown via Ex Situ and In Situ MOCVD Epitaxy β-Ga₂O₃垂直U型沟槽MOSFET，其通过外延MOCVD（外位和原位）生长的氮掺杂电流阻挡层构建。

IEEE Electron Device Letters

IF4.5

2025-11-13

OAAI

Xiaorui Xu; Haoxin Lin; Yicong Deng; Zhengbo Wang; Xueli Han; Desen Chen; Xiaoming Wang; Wei Zeng; Duanyang Chen; Hongji Qi; Haizhong Zhang

Homoepitaxial Growth and the Electronic Structure of Degenerately Si Doped β-Ga2O3 (100) Oriented Thin Films 同质外延生长及高掺杂Si掺杂β-Ga₂O₃ (100) 取向薄膜的电子结构

Advanced Electronic Materials

IF5.3

2025-10-24

OAAI

Ziqi Zhang; Yan Wang; Zhenni Yang; Wenjing Xu; Yan Sun; Yihong Chen; Xiangyu Xu; Ye Yang; Duanyang Chen; Xin Dong; Hao Long; Hongji Qi; Kelvin H. L. Zhang

Achievement of High-Quality Gallium Oxide Epitaxial Growth via Machine Learning 通过机器学习实现高质量氧化镓外延生长

Advanced Functional Materials

IF19

2025-10-21

PREAI

Yaoping Lu; Xing Yang; Ben Niu; Titao Li; Zhenjie Zheng; Lemin Jia; Duanyang Chen; Hongji Qi; Kelvin H. L. Zhang; Minmin Zhu; Haizhong Zhang; Xiaoqiang Lu

Ga₂O₃ Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications Ga₂O₃垂直SBD（肖特基势垒二极管），采用悬浮场板辅助浅台面终止结构，适用于多千伏及安培级应用。

IEEE Transactions on Electron Devices

IF3.2

2025-08-01

PREAI

Xueli Han; Xiaorui Xu; Zhengbo Wang; Hanchao Yang; Desen Chen; Yicong Deng; Duanyang Chen; Haizhong Zhang; Hongji Qi

Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping 通过原位氮掺杂揭示p型Ga2O3的高空穴浓度

JOURNAL OF PHYSICAL CHEMISTRY LETTERS

IF4.6

2025-04-21

PREAI

Lu, Yaoping; Jia, Lemin; Chen, Duanyang; Li, Titao; Qi, Hongji; Xu, Xiaorui; Zhang, Haizhong; Lu, Xiaoqiang

Highly Sensitive Solar-Blind Ultraviolet Photodetectors and 64 x 64 Photodetector Arrays Realized by Molecule Beam Epitaxy Grown Ga2O3 Epitaxial Thin Films 通过分子束外延生长的Ga2O3外延薄膜实现的高灵敏度日盲紫外线光电探测器和64x64光电探测器阵列

ADVANCED OPTICAL MATERIALS

IF7.2

2025-01-12

PREAI

Kuang, Siliang; Yang, Zhenni; Xu, Xiangyu; He, Yaxin; Bao, Lingjie; Liang, Zheng; Li, Kuangkuang; Ling, Kang; Zhang, Xu; Yang, Ye; Long, Hao; Cheng, Qijin; Liu, Xingzhao; Chen, Duanyang; Qi, Hongji; Zhang, Kelvin H. L.

The study of (101) plane in (3-Ga2O3 crystal

APPLIED SURFACE SCIENCE

IF6.9

2024-12-01

PREAI

Bu, Yuzhe; Yang, Wenjuan; Wei, Jinshan; Sai, Qinglin; Qi, Hongji

Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication

APPLIED PHYSICS LETTERS

IF3.6

2024-11-13

PREAI

Xu, Xiaorui; Chen, Desen; Lu, Yaoping; Li, Titao; Han, Xueli; Chen, Duanyang; Qi, Hongji; Yang, Dan; Zhu, Minmin; Zhang, Haizhong; Lu, Xiaoqiang

Ga vacancies as dominant intrinsic acceptors in Sn-doped β-Ga2O3 revealed by positron annihilation spectroscopy

PHYSICAL REVIEW B

IF3.7

2024-11-07

PREAI

Li, Y. H.; Dong, Y.; Xu, G. W.; Bu, Y. Z.; Sai, Q. L.; Qi, H. J.; Long, S. B.; Chen, Z. Q.; Ye, B. J.; Zhang, H. J.

Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films MBE生长的Sn掺杂Ga2O3同质外延薄膜的输运和电子结构性质

MATERIALS TODAY PHYSICS

IF9.7

2024-11-01

PREAI

Kuang, Siliang; Yang, Zhenni; Zhang, Ziqi; Sheng, Ziqian; Wei, Shenglong; Chen, Yihong; Xu, Wenjing; Yang, Ye; Chen, Duanyang; Qi, Hongji; Zhang, Kelvin H. L.

Electronic structure and surface band bending of Sn-doped β-Ga2O3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations

PHYSICAL REVIEW B

IF3.7

2024-09-11

PREAI

Zhang, Jiaye; Yang, Zhenni; Kuang, Siliang; Zhang, Ziqi; Wei, Shenglong; Willis, Joe; Lee, Tien-Lin; Mazzolini, Piero; Bierwagen, Oliver; Chen, Shanquan; Chen, Zuhuang; Chen, Duanyang; Qi, Hongji; Scanlon, David; Zhang, Kelvin H. L.

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

APPLIED PHYSICS LETTERS

IF3.6

2024-07-12

PREAI

Xu, Xiaorui; Deng, Yicong; Li, Titao; Chen, Duanyang; Wang, Fangzhou; Yu, Cheng; Qi, Hongji; Wang, Yang; Zhang, Haizhong; Lu, Xiaoqiang

Rapid Growth of a Yb:YAG Slab Crystal with Superior Laser Properties by the Edge-Defined Film-Fed Growth Method

CRYSTAL GROWTH & DESIGN

IF3.4

2024-02-20

PREAI

Zhang, Lu; Pan, Mingyan; Tian, Ruifeng; Sun, Jun; Mao, Jiajia; Kong, Wenbo; Jiang, Bowen; Ji, Weiguo; Qi, Hongji