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T

Tetsuya Takeuchi

tohoku university

45H指数
555论文数
9.9K被引数
收录论文 48
发表时间
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Improvement of InGaN power converters for optical wireless power transmission提高InGaN功率转换器用于光无线电力传输
errJapanese Journal of Applied Physics
IF1.8
err2026-01-30
err0
PREAI
errSuzuki, Junichi; Takahashi, Ryusei; Koga, Masahiro; Shibui, Shunsuke; Hayashi, Shunki; Kaneko, Yuto; Aoyama, Reo; Noguchi, Takahiro; Fujisawa, Takahiro; Fukamachi, Toshihiko; Naniwae, Koichi; Ii, Shiori; Watanabe, Ruka; Miyoshi, Makoto; Takeuchi, Tetsuya; Kamiyama, Satoshi; Uchida, Shiro
err分享
err收藏
Recent progress on highly efficient and long-lifetime AlGaN-based light-emitting diodes近期关于高效率、长寿命AlGaN基发光二极管的研究进展
errAPPLIED PHYSICS EXPRESS
IF2.2
err2025-10-01
err0
PREAI
errSaito, Yoshiki; Miyazaki, Atsushi; Boyama, Shinya; Okuno, Koji; Ishiguro, Hisanori; Takeuchi, Tetsuya; Shima, Kohei; Chichibu, Shigefusa F.
err分享
err收藏
Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-02-24
err0
PREAI
errSaito, Takumu; Miyake, Rintaro; Yamada, Ryoya; Imoto, Yoshinori; Maruyama, Shundai; Sasaki, Yusuke; Karino, Shogo; Iwayama, Sho; Miyake, Hideto; Naniwae, Koichi; Kamiyama, Satoshi; Takeuchi, Tetsuya; Iwaya, Motoaki
err分享
err收藏
GaInN hexagonal nanopyramid-based structures with coaxial multiple-quantum shells for red-light micro-LEDs
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-01-01
err0
PREAI
errInaba, Soma; Lu, Weifang; Shima, Ayaka; Fukami, Naoto; Hattori, Yuta; Huang, Kai; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi
err分享
err收藏
Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-03-28
err3
errOAAI
errWatanabe, Ruka; Kobayashi, Kenta; Yanagawa, Mitsuki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Iwaya, Motoaki; Kamei, Toshihiro
err分享
err收藏
Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arraysGaInN/GaN多量子壳 (MQS) 纳米线发光二极管阵列中电流注入路径的尺寸依赖性
errNANOPHOTONICS
IF6.6
err2023-06-16
err8
errOAAI
errKatsuro, Sae; Lu, Weifang; Ito, Kazuma; Nakayama, Nanami; Inaba, Soma; Shima, Ayaka; Yamamura, Shiori; Jinno, Yukimi; Sone, Naoki; Huang, Kai; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi
err分享
err收藏
Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-05-17
err6
PREAI
errChichibu, S. F.; Nagata, K.; Oya, M.; Kasuya, T.; Okuno, K.; Ishiguro, H.; Saito, Y.; Takeuchi, T.; Shima, K.
err分享
err收藏
Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-12-19
err13
PREAI
errKondo, Ryosuke; Yabutani, Ayumu; Omori, Tomoya; Yamada, Kazuki; Matsubara, Eri; Hasegawa, Ryota; Nishibayashi, Toma; Iwayama, Sho; Takeuchi, Tetsuya; Kamiyama, Satoshi; Miyake, Hideto; Iwaya, Motoaki
err分享
err收藏
Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2022-10-27
err4
PREAI
errInaba, Soma; Lu, Weifang; Ito, Kazuma; Katsuro, Sae; Nakayama, Nanami; Shima, Ayaka; Jinno, Yukimi; Yamamura, Shiori; Sone, Naoki; Huang, Kai; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi
err分享
err收藏
Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs
errNANOPHOTONICS
IF6.6
err2022-09-28
err5
errOAAI
errKatsuro, Sae; Lu, Weifang; Ito, Kazuma; Nakayama, Nanami; Yamamura, Shiori; Jinno, Yukimi; Inaba, Soma; Shima, Ayaka; Sone, Naoki; Han, Dong-Pyo; Huang, Kai; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi
err分享
err收藏
Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2022-05-24
err5
PREAI
errHan, Dong-Pyo; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi
err分享
err收藏
Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-04-05
err18
PREAI
errTakahashi, Ryo; Fujiki, Ryoto; Hozo, Keisuke; Hiramatsu, Ryoya; Matsukura, Makoto; Kojima, Takahiro; Han, Dong-Pyo; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi
err分享
err收藏
Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires同轴GaInN/GaN多量子壳层纳米线上生长的p型GaN壳层的形貌控制和晶体质量
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2021-11-03
err10
PREAI
errLu, Weifang; Nakayama, Nanami; Ito, Kazuma; Katsuro, Sae; Sone, Naoki; Miyamoto, Yoshiya; Okuno, Koji; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
err分享
err收藏
Quasi-ballistic thermal conduction in 6H-SiC6H-SiC中的准弹道热传导
errMATERIALS TODAY PHYSICS
IF9.7
err2021-09-01
err8
errOAAI
errCheng, Z.; Lu, W.; Shi, J.; Tanaka, D.; Protik, N. H.; Wang, S.; Iwaya, M.; Takeuchi, T.; Kamiyama, S.; Akasaki, I.; Amano, H.; Graham, S.
err分享
err收藏
Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-08-31
err6
PREAI
errLi, L. Y.; Shima, K.; Yamanaka, M.; Kojima, K.; Egawa, T.; Uedono, A.; Ishibashi, S.; Takeuchi, T.; Miyoshi, M.; Chichibu, S. F.
err分享
err收藏
Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions
errNANOPHOTONICS
IF6.6
err2021-08-26
err11
errOAAI
errKatsuro, Sae; Lu, Weifang; Ito, Kazuma; Nakayama, Nanami; Sone, Naoki; Okuno, Koji; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
err分享
err收藏
Space-charge effect on photogenerated-current and -voltage in III-nitride optoelectronic semiconductors
errPHOTONICS RESEARCH
IF7.2
err2021-08-24
err3
PREAI
errHan, Dong-Pyo; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
err分享
err收藏
Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2021-07-27
err7
PREAI
errMiyamoto, Yoshiya; Lu, Weifang; Sone, Naoki; Okuda, Renji; Ito, Kazuma; Okuno, Koji; Mizutani, Koichi; Iida, Kazuyoshi; Ohya, Masaki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
err分享
err收藏
AlGaN-based UV-B laser diode with a high optical confinement factor
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-04-21
err42
PREAI
errTanaka, Shunya; Ogino, Yuya; Yamada, Kazuki; Omori, Tomoya; Ogura, Reo; Teramura, Shohei; Shimokawa, Moe; Ishizuka, Sayaka; Yabutani, Ayumu; Iwayama, Sho; Sato, Kosuke; Miyake, Hideto; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
err分享
err收藏
Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-04-19
err1
PREAI
errMiyoshi, Makoto; Nakabayashi, Taiki; Takada, Haruka; Egawa, Takashi; Takeuchi, Tetsuya
err分享
err收藏

研究方向

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合作学者
合作期刊
H
Hiroshi Amano
H 指数: 88 · 论文数: 1.8K
I
Isamu Akasaki
H 指数: 76 · 论文数: 1.2K
Y
Yoshiki Saito
H 指数: 74 · 论文数: 397
S
Samuel Graham
H 指数: 70 · 论文数: 520
A
A. V. Nurmikko
H 指数: 65 · 论文数: 548
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