Kentarou Sawano - Publications, H-index & Citations

Kentarou Sawano

Tokyo City University

30H指数

363论文数

2.9K被引数

收录论文 76

发表时间

Evaluation of Crystal Rotation around Cracks in SiGe/Ge/Si(111) Using NBD Diffraction Disks and STEM Moiré 利用NBD衍射盘和STEM莫尔条纹评估SiGe/Ge/Si(111)中裂纹周围的晶体旋转

Microscopy and Microanalysis

IF3

2026-07-27

OAAI

Junji Yamanaka; Azusa Baba; Maro Murata; Chiaya Yamamoto; Kentarou Sawano; Keisuke Arimoto

Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si 在Si衬底上Co2Fe(Al,Si)/Ge/Co2FeSi垂直自旋阀器件中观测到室温磁电阻效应

Materials Science in Semiconductor Processing

IF4.6

2025-07-19

PREAI

Shimon Watahiki; Shuhei Kusumoto; Astuya Yamada; Sora Obinata; Shinya Yamada; Shuya Kikuoka; Michihiro Yamada; Kentarou Sawano; Kohei Hamaya

Observation of intravalley spin scattering in a doped multivalley semiconductor

PHYSICAL REVIEW B

IF3.7

2025-02-18

PREAI

Hamaya, K.; Okada, T.; Kawashima, K.; Naito, T.; Oki, K.; Kikuoka, S.; Wagatsuma, Y.; Yamada, M.; Sawano, K.

Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-07-01

OAAI

Kanesawa, R.; Kikuoka, S.; Shibahara, Y.; Wagatsuma, Y.; Yamada, M.; Hamaya, K.; Sawano, K.

Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-06-01

OAAI

Kikuoka, Shuya; Kanesawa, Rena; Yamada, Michihiro; Hamaya, Kohei; Sawano, Kentarou

Al-Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-05-01

OAAI

Yamada, Michihiro; Suzuki, Shota; Osaka, Ai I.; Sumi, Kazuaki; Inoue, Takahiro; Hattori, Azusa N.; Yamada, Shinya; Sawano, Kentarou; Dhamrin, Marwan; Hamaya, Kohei

Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-04-01

PREAI

Yamada, Atsuya; Yamada, Michihiro; Kusumoto, Shuhei; Nascimento, Julio A. do; Murrill, Connor; Yamada, Shinya; Sawano, Kentarou; Lazarov, Vlado K.; Hamaya, Kohei

Effect of Sn doping on low-temperature growth of Ge epilayers on half-metallic Co2FeSi Sn掺杂对半金属Co2FeSi上Ge外延层低温生长的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-03-01

OAAI

Yamada, Michihiro; Kusumoto, Shuhei; Yamada, Atsuya; Sawano, Kentarou; Hamaya, Kohei

Dzyaloshinskii-Moriya interaction at epitaxial ferromagnet/semiconductor interface

PHYSICAL REVIEW B

IF3.7

2023-09-28

PREAI

Kimura, Shuto; Yamada, Michihiro; Okuno, Takumi; Sawano, Kentarou; Hamaya, Kohei; Ando, Kazuya

Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-07-01

PREAI

Fujisawa, Taisuke; Onogawa, Atsushi; Horiuchi, Miki; Sano, Yuichi; Sakata, Chihiro; Yamanaka, Junji; Hara, Kosuke O.; Sawano, Kentarou; Nakagawa, Kiyokazu; Arimoto, Keisuke

Effect of Strain on Room-Temperature Spin Transport in Si0.1Ge0.9

PHYSICAL REVIEW APPLIED

IF4.4

2022-08-02

OAAI

Naito, T.; Yamada, M.; Wagatsuma, Y.; Sawano, K.; Hamaya, K.

Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor

PHYSICAL REVIEW B

IF3.7

2022-05-13

OAAI

Naito, T.; Nishimura, R.; Yamada, M.; Masago, A.; Shiratsuchi, Y.; Wagatsuma, Y.; Sawano, K.; Nakatani, R.; Oguchi, T.; Hamaya, K.

Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi

APPLIED PHYSICS LETTERS

IF3.6

2021-11-08

PREAI

Yamada, A.; Yamada, M.; Honda, M.; Yamada, S.; Sawano, K.; Hamaya, K.

Experimental extraction of donor-driven spin relaxation in n-type nondegenerate germanium

PHYSICAL REVIEW B

IF3.7

2021-09-01

PREAI

Yamada, M.; Ueno, T.; Naito, T.; Sawano, K.; Hamaya, K.

Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi

APPLIED PHYSICS LETTERS

IF3.6

2021-04-21

PREAI

Kudo, K.; Yamada, M.; Honda, S.; Wagatsuma, Y.; Yamada, S.; Sawano, K.; Hamaya, K.

Thermoelectric Si1-xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators

APPLIED PHYSICS LETTERS

IF3.6

2020-10-05

PREAI

Taniguchi, Tatsuhiko; Ishibe, Takafumi; Hosoda, Ryoya; Wagatsuma, Youya; Alam, Md. Mahfuz; Sawano, Kentarou; Uenuma, Mutsunori; Uraoka, Yukiharu; Yamashita, Yuichiro; Mori, Nobuya; Nakamura, Yoshiaki

Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2020-10-01

PREAI

Wagatsuma, Youya; Alam, Md Mahfuz; Okada, Kazuya; Hoshi, Yusuke; Yamada, Michihiro; Hamaya, Kohei; Sawano, Kentarou

Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe (vol 6, pg 40, 2020)

NPJ QUANTUM INFORMATION

IF8.3

2020-08-06

OAAI

Struck, Tom; Hollmann, Arne; Schauer, Floyd; Fedorets, Olexiy; Schmidbauer, Andreas; Sawano, Kentarou; Riemann, Helge; Abrosimov, Nikolay V.; Cywinski, Lukasz; Bougeard, Dominique; Schreiber, Lars R.

Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2020-08-01

PREAI

Niikura, Kenta; Yamahata, Natsuki; Hoshi, Yusuke; Takamura, Tsukasa; Saito, Kimihiko; Konagai, Makoto; Sawano, Kentarou

Reduced Inhomogeneous Broadening in Hexagonal Boron Nitride-Encapsulated MoTe2 Monolayers by Thermal Treatment

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-07-31

PREAI

Hayashida, Shunya; Saitoh, Risa; Watanabe, Kenji; Taniguchi, Takashi; Sawano, Kentarou; Hoshi, Yusuke

研究方向