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收藏分享 收藏 分享 收藏 Effects of dietary L-tryptophan supplementation on agonistic behavior, feeding behavior, growth performance, and nutritional composition of the Chinese mitten crab (Eriocheir sinensis)
Pang, Yang -Yang; Zhang, Jun-Yan; Chen, Qing; Niu, Chao; Shi, Ao-Ya; Zhang, Dong-Xin; Ma, Xue-Li; Zhang, Ying; Song, Ya-Meng; Hou, Meng-Na; Shi, Xing-Liang; Yang, Xiao-Zhen; Cheng, Yong-Xu 分享 收藏 One-Pot Method Preparation of Dendritic Mesoporous Silica-Loaded Matrine Nanopesticide for Noninvasive Administration Control of Monochamus alternatus: The Vector Insect of Bursapherenchus xylophophilusDing, Zhenting; Wei, Ke; Zhang, Yiwu; Ma, Xueli; Yang, Liu; Zhang, Weiguang; Liu, Huixiang; Jia, Chunyan; Shen, Weixing; Ma, Shencheng; Xu, Li; Zhou, Chenggang; Liu, Yanxue; Gao, Shangkun; Ji, Yingchao 分享 收藏 分享 收藏 Advanced process and electron device technologyZhang, Dan; Su, Xiaojing; Chang, Hao; Xu, Hao; Wang, Xiaolei; He, Xiaobin; Li, Junjie; Zhao, Fei; Yao, Qide; Luo, Yanna; Ma, Xueli; Yang, Hong; Li, Yongliang; Wu, Zhenhua; Su, Yajuan; Yang, Tao; Wei, Yayi; Du, Anyan; Zhu, Huilong; Li, Junfeng; Yin, Huaxiang; Luo, Jun; Ye, Tianchun; Wang, Wenwu 分享 收藏 Thermodynamic driving force of transient negative capacitance of ferroelectric capacitorsZhang, Yuanyuan; Sun, Xiaoqing; Chai, Junshuai; Xu, Hao; Ma, Xueli; Xiang, Jinjuan; Han, Kai; Wang, Xiaolei; Wang, Wenwu; Ye, Tianchun 分享 收藏 Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods基于低温臭氧氧化和si-cap方法的HfO2/Si0.7Ge0.3界面钝化机理研究Yao, Qide; Ma, Xueli; Wang, Hanxiang; Wang, Yanrong; Wang, Guilei; Zhang, Jing; Liu, Wenkai; Wang, Xiaolei; Yan, Jiang; Li, Yongliang; Wang, Wenwu 分享 收藏 Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETsLiu, Haoyan; Li, Yongliang; Cheng, Xiaohong; Zan, Ying; Lu, Yihong; Wang, Guilei; Li, Junjie; Kong, Zhenzhen; Ma, Xueli; Wang, Xiaolei; Yang, Hong; Luo, Jun; Wang, Wenwu 分享 收藏 分享 收藏 分享 收藏 Experimental study of the ultrathin oxides on SiGe alloy formed by low-temperature ozone oxidationMa, Xueli; Wang, Xiaolei; Zhou, Lixing; Xu, Hao; Zhang, Yuanyuan; Duan, Jiahui; Xiang, Jinjuan; Yang, Hong; Li, Junjie; Li, Yongliang; Yin, Huaxiang; Wang, Wenwu 分享 收藏 Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacksYang, Hong; Qi, Luwei; Zhang, Yanbo; Tang, Bo; Liu, Qianqian; Xu, Hao; Ma, Xueli; Wang, Xiaolei; Li, Yongliang; Yin, Huaxiang; Li, Junfeng; Zhu, Huilong; Zhao, Chao; Wang, Wenwu; Ye, Tianchun 分享 收藏 Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidationMa, Xueli; Zhou, Lixing; Xiang, Jinjuan; Yang, Hong; Wang, Xiaolei; Li, Yongliang; Zhang, Jing; Zhao, Chao; Yin, Huaxiang; Wang, Wenwu; Ye, Tianchun 分享 收藏 Understanding dipole formation at dielectric/dielectric hetero-interfaceZhou, Lixing; Wang, Xiaolei; Han, Kai; Ma, Xueli; Wang, Yanrong; Xiang, Jinjuan; Yang, Hong; Zhang, Jing; Zhao, Chao; Ye, Tianchun; Radamson, Henry H.; Wang, Wenwu 分享 收藏 分享 收藏 A possible origin of core-level shift in SiO2/Si stacksWang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Zhang, Jing; Han, Kai; Yang, Hong; Ma, Xueli; Zhao, Chao; Chen, Dapeng; Ye, Tianchun 分享 收藏 Reexamination of band offset transitivity employing oxide heterojunctionsWang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Zhang, Jing; Han, Kai; Yang, Hong; Ma, Xueli; Zhao, Chao; Chen, Dapeng; Ye, Tianchun 分享 收藏 Band alignment of HfO2 on SiO2/Si structureWang, Xiaolei; Han, Kai; Wang, Wenwu; Xiang, Jinjuan; Yang, Hong; Zhang, Jing; Ma, Xueli; Zhao, Chao; Chen, Dapeng; Ye, Tianchun 分享 收藏 
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