未登录Fabrication and Characterizations of Porous AlGaN Distributed Bragg Reflectors with Excellent Thermal Stability at High Temperature高温下具有优异热稳定性的多孔AlGaN分布式布拉格反射器的制备与表征
Bao, Y; Lu, WF; Wang, MT; Liu, CY; Han, DP; Bi, ZX; Li, JC; Huang, K; Kang, JY; Kamiyama, S; Zhang, R .png)
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收藏Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodesSaito, Takumu; Miyake, Rintaro; Yamada, Ryoya; Imoto, Yoshinori; Maruyama, Shundai; Sasaki, Yusuke; Karino, Shogo; Iwayama, Sho; Miyake, Hideto; Naniwae, Koichi; Kamiyama, Satoshi; Takeuchi, Tetsuya; Iwaya, Motoaki 分享 收藏 Characterizations and Modeling of Grown MQS Nanowires with GaInN/GaN Superlattice StructuresYan, Jinjian; Inaba, Soma; Lu, Weifang; Bao, Yang; Sun, Yang; Li, Jinchai; Iwaya, Motoaki; Huang, Kai; Kang, Junyong; Takeuchi, Tetsuya; Zhang, Rong; Kamiyama, Satoshi 分享 收藏 分享 收藏 分享 收藏 Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arraysGaInN/GaN多量子壳 (MQS) 纳米线发光二极管阵列中电流注入路径的尺寸依赖性Katsuro, Sae; Lu, Weifang; Ito, Kazuma; Nakayama, Nanami; Inaba, Soma; Shima, Ayaka; Yamamura, Shiori; Jinno, Yukimi; Sone, Naoki; Huang, Kai; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi 分享 收藏 Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulationKondo, Ryosuke; Yabutani, Ayumu; Omori, Tomoya; Yamada, Kazuki; Matsubara, Eri; Hasegawa, Ryota; Nishibayashi, Toma; Iwayama, Sho; Takeuchi, Tetsuya; Kamiyama, Satoshi; Miyake, Hideto; Iwaya, Motoaki 分享 收藏 Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDsInaba, Soma; Lu, Weifang; Ito, Kazuma; Katsuro, Sae; Nakayama, Nanami; Shima, Ayaka; Jinno, Yukimi; Yamamura, Shiori; Sone, Naoki; Huang, Kai; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi 分享 收藏 Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDsKatsuro, Sae; Lu, Weifang; Ito, Kazuma; Nakayama, Nanami; Yamamura, Shiori; Jinno, Yukimi; Inaba, Soma; Shima, Ayaka; Sone, Naoki; Han, Dong-Pyo; Huang, Kai; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi 分享 收藏 分享 收藏 Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetrationTakahashi, Ryo; Fujiki, Ryoto; Hozo, Keisuke; Hiramatsu, Ryoya; Matsukura, Makoto; Kojima, Takahiro; Han, Dong-Pyo; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi 分享 收藏 Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires同轴GaInN/GaN多量子壳层纳米线上生长的p型GaN壳层的形貌控制和晶体质量Lu, Weifang; Nakayama, Nanami; Ito, Kazuma; Katsuro, Sae; Sone, Naoki; Miyamoto, Yoshiya; Okuno, Koji; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu 分享 收藏 Quasi-ballistic thermal conduction in 6H-SiC6H-SiC中的准弹道热传导Cheng, Z.; Lu, W.; Shi, J.; Tanaka, D.; Protik, N. H.; Wang, S.; Iwaya, M.; Takeuchi, T.; Kamiyama, S.; Akasaki, I.; Amano, H.; Graham, S. 分享 收藏 Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditionsKatsuro, Sae; Lu, Weifang; Ito, Kazuma; Nakayama, Nanami; Sone, Naoki; Okuno, Koji; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu 分享 收藏 分享 收藏 Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel JunctionMiyamoto, Yoshiya; Lu, Weifang; Sone, Naoki; Okuda, Renji; Ito, Kazuma; Okuno, Koji; Mizutani, Koichi; Iida, Kazuyoshi; Ohya, Masaki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu 分享 收藏 AlGaN-based UV-B laser diode with a high optical confinement factorTanaka, Shunya; Ogino, Yuya; Yamada, Kazuki; Omori, Tomoya; Ogura, Reo; Teramura, Shohei; Shimokawa, Moe; Ishizuka, Sayaka; Yabutani, Ayumu; Iwayama, Sho; Sato, Kosuke; Miyake, Hideto; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu 分享 收藏 分享 收藏 n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centersHan, Dong-Pyo; Fujiki, Ryoto; Takahashi, Ryo; Ueshima, Yusuke; Ueda, Shintaro; Lu, Weifang; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu 分享 收藏 分享 收藏 
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