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P

Paolo Fantini

micron technology inc

0H指数
2论文数
0被引数
收录论文 13
发表时间
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Write disturb model for 3D XPointTM array3D XPointTM阵列的写入干扰模型
errIEEE Electron Device Letters
IF4.5
err2026-09-22
err0
PREAI
errLuca Laurin; Mattia Boniardi; Innocenzo Tortorelli; Andrea Ghetti; Enrico Varesi; Hongqi Li; Christina Papagianni; Bob Gleixner; Hongmei Wang; Anna Maria Conti; Augusto Benvenuti; Paolo Fantini; Fabio Pellizzer
err分享
err收藏
Physics-Based Model for Threshold Voltage Drift of Ovonic Threshold Switch (OTS)基于物理的奥氏阈值开关(OTS)阈值电压漂移模型
errIEEE Electron Device Letters
IF4.5
err2026-04-01
err0
PREAI
errFantini, Paolo; McCrate, Joe
err分享
err收藏
The genus Gautieria (Gomphales) in Europe and the Mediterranean Basin: a morphological and phylogenetic taxonomic revision
errPERSOONIA
IF7.3
err2023-06-30
err4
errOAAI
errVidal, J. M.; Cseh, P.; Merenyi, Z.; Bona, L.; Rudnoy, S.; Bratek, Z.; Paz, A.; Mleczko, P.; Kozak, M.; Chachula, P.; Assyov, B.; Slavova, M.; Kaounas, V.; Konstantinidis, G.; Rodriguez, F.; Cabero, J.; Garcia-Verdugo, F.; Garcia-Alonso, F.; Mahiques, R.; Fantini, P.; States, J. S.
err分享
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Bipolar switching in chalcogenide phase change memory
errSCIENTIFIC REPORTS
IF3.9
err2016-07-05
err67
errOAAI
errCiocchini, N.; Laudato, M.; Boniardi, M.; Varesi, E.; Fantini, P.; Lacaita, A. L.; Ielmini, D.
err分享
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Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses
errFRONTIERS IN NEUROSCIENCE
IF3.2
err2016-03-08
err203
errOAAI
errAmbrogio, Stefano; Ciocchini, Nicola; Laudato, Mario; Milo, Valerio; Pirovano, Agostino; Fantini, Paolo; Ielmini, Daniele
err分享
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Field-accelerated structural relaxation in the amorphous state of phase change memory
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-06-26
err8
errOAAI
errFantini, P.; Ferro, M.; Calderoni, A.
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Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-05-23
err27
PREAI
errFantini, P.; Ferro, M.; Calderoni, A.; Brazzelli, S.
err分享
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Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-01-04
err59
errOAAI
errFantini, P.; Brazzelli, S.; Cazzini, E.; Mani, A.
err分享
err收藏
Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-11-28
err49
PREAI
errRizzi, M.; Spessot, A.; Fantini, P.; Ielmini, D.
err分享
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Multidisciplinary Design Optimization Framework for the Pre Design Stage
errJOURNAL OF INTELLIGENT & ROBOTIC SYSTEMS
IF2.8
err2010-02-04
err8
errOAAI
errGuenov, Marin; Fantini, Paolo; Balachandran, Libish; Maginot, Jeremy; Padulo, Mattia; Nunez, Marco
err分享
err收藏
Experimental investigation of transport properties in chalcogenide materials through 1/f noise measurements
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-06-26
err50
PREAI
errFantini, P.; Pirovano, A.; Ventrice, D.; Redaelli, A.
err分享
err收藏
Photoemission investigation of the alkali-metal-induced two-dimensional electron gas at the Si(111)(1x1):H surface -: art. no. 155325
errPHYSICAL REVIEW B
IF3.7
err2003-04-30
err5
PREAI
errBiagi, R; Fantini, P; De Renzi, V; Betti, MG; Mariani, C; del Pennino, U
err分享
err收藏
Gap-state formation in two-dimensional ordered Bi layers on InAs(110)
errPHYSICAL REVIEW B
IF3.7
err1998-08-15
err14
PREAI
errBetti, MG; Corradini, V; del Pennino, U; De Renzi, V; Fantini, P; Mariani, C
err分享
err收藏

研究方向

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合作学者
合作期刊
D
Daniele Ielmini
H 指数: 83 · 论文数: 521
A
Andrea L. Lacaita
H 指数: 67 · 论文数: 521
S
Stefano Ambrogio
H 指数: 38 · 论文数: 122
C
Carlo Mariani
H 指数: 37 · 论文数: 291
M
Maria Grazia Betti
H 指数: 34 · 论文数: 241
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