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Lauri Niinistö

Aalto University

59H指数
609论文数
1.3W被引数
收录论文 50
发表时间
Deposition of tin oxide into porous silicon by atomic layer epitaxy
err2019-12-07
err72
PREAI
errDucso, C; Khanh, NQ; Horvath, Z; Barsony, I; Utriainen, M; Lehto, S; Nieminen, M; Niinisto, L
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The reduction of oxygen on Pt-TiO2 coated Ti electrodes in alkaline solution
err2019-12-06
err55
PREAI
errTammeveski, K; Tenno, T; Rosental, A; Talonen, P; Johansson, LS; Niinistö, L
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Challenges of Thin Layers for SOFC Devices: From Low-Cost Chemical Bath Deposition (CBD) to Atomic Layer Deposition (ALD)
err2011-04-25
err1
PREAI
errMedina-Lott, B.; Tasse, M.; Brahim, C.; Ringuede, A.; Niinisto, L.; Cassir, M.
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Synthesis of a Thin-Layered Ionic Conductor, CeO2-Y2O3, by Atomic Layer Deposition in View of Solid Oxide Fuel Cell Applications
err2009-09-01
err55
PREAI
errBallee, Elise; Ringuede, Armelle; Cassir, Michel; Putkonen, Matti; Niinisto, Lauri
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Titanium(IV) acetylacetonate xerogels for processing titania films
err2009-04-27
err24
PREAI
errAcik, Ilona Oja; Madarasz, J.; Krunks, M.; Tonsuaadu, K.; Pokol, G.; Niinisto, L.
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A pyrazolate-based metalorganic tantalum precursor that exhibits high thermal stability and its use in the atomic layer deposition of Ta2O5
err2007-09-26
err44
PREAI
errDezelah, Charles L., IV; Wiedmann, Monika K.; Mizohata, Kenichiro; Baird, Ronald J.; Niinisto, Lauri; Winter, Charles H.
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Atomic layer deposition of HfO2 thin films exploiting novel cyclopentadienyl precursors at high temperatures
err2007-06-01
err65
PREAI
errNiinisto, Jaakko; Putkonen, Matti; Niinisto, Lauri; Song, Fuquan; Williams, Paul; Heys, Peter N.; Odedra, Rajesh
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Atomic layer deposition of PbZrO3 thin films
err2007-04-01
err20
PREAI
errHarjuoja, Jenni; Vayrynen, Samuli; Putkonen, Matti; Niinisto, Lauri; Rauhala, Eero
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Low temperature growth of ZnMnO:: A way to avoid inclusions of foreign phases and spinodal decomposition
err2007-02-20
err35
errOAAI
errWojcik, A.; Godlewski, M.; Guziewicz, E.; Kopalko, K.; Jakiela, R.; Kiecana, M.; Sawicki, M.; Guziewicz, M.; Putkonen, M.; Niinisto, L.; Dumont, Y.; Keller, N.
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Atomic layer deposition of tungsten(III) oxide thin films from W2(NMe2)6 and water:: Precursor-based control of oxidation state in the thin film material
err2006-07-11
err50
PREAI
errDezelah, Charles L.; El-Kadri, Oussama M.; Szilagyi, Imre M.; Campbell, Joseph M.; Arstila, Kai; Niinisto, Lauri; Winter, Charles H.
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HfO2 films grown by ALD using cyclopentadienyl-type precursors and H2O or O3 as oxygen source
err2006-01-01
err44
PREAI
errNiinistö, J; Putkonen, M; Niinistö, L; Arstila, K; Sajavaara, T; Lu, J; Kukli, K; Ritala, M; Leskelä, M
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Atomic layer deposition of Ga2O3 films from a dialkylamido-based precursor
err2005-12-22
err85
PREAI
errDezelah, CL; Niinistö, J; Arstila, K; Niinistö, L; Winter, CH
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Analysis of ALD-processed thin films by ion-beam techniques
err2005-07-14
err66
PREAI
errPutkonen, M; Sajavaara, T; Niinistö, L; Keinonen, J
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In situ quadrupole mass spectrometry study of atomic-layer deposition of ZrO2 using Cp2Zr(CH3)2 and water
err2005-07-06
err56
PREAI
errNiinistö, J; Rahtu, A; Putkonen, M; Ritala, M; Leskelä, M; Niinistö, L
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