J.B. Boos - Publications, H-index & Citations

J.B. Boos

United States Department of Defense

29H指数

204论文数

3.1K被引数

收录论文 19

发表时间

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

APPLIED PHYSICS LETTERS

IF3.6

2012-12-03

PREAI

Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Boos, J. Brad; Park, Doewon; Bennett, Brian R.

Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-04-02

PREAI

Yuan, Ze; Nainani, Aneesh; Bennett, Brian R.; Boos, J. Brad; Ancona, Mario G.; Saraswat, Krishna C.

Demonstration of a mode-conversion cavity add-drop filter

OPTICS LETTERS

IF3.3

2011-06-07

PREAI

Pruessner, Marcel W.; Khurgin, Jacob B.; Stievater, Todd H.; Rabinovich, William S.; Bass, Robert; Boos, J. Brad; Urick, Vincent J.

Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-02-04

OAAI

Xia, Ling; Boos, J. Brad; Bennett, Brian R.; Ancona, Mario G.; del Alamo, Jesus A.

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

MRS BULLETIN

IF4.9

2011-01-31

PREAI

Bennett, Brian R.; Ancona, Mario G.; Boos, J. Brad

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

APPLIED PHYSICS LETTERS

IF3.6

2010-10-04

114

OAAI

Ali, A.; Madan, H. S.; Kirk, A. P.; Zhao, D. A.; Mourey, D. A.; Hudait, M. K.; Wallace, R. M.; Jackson, T. N.; Bennett, B. R.; Boos, J. B.; Datta, S.

Antimonide-based diodes for terahertz mixers

APPLIED PHYSICS LETTERS

IF3.6

2008-06-17

PREAI

Magno, R.; Champlain, J. G.; Newman, H. S.; Ancona, M. G.; Culbertson, J. C.; Bennett, B. R.; Boos, J. B.; Park, D.

High-current photodetectors as efficient, linear, and high-power RF output stages 作为高效、线性和高功率RF输出级的高电流光电探测器

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2008-01-01

PREAI

Tulchinsky, David A.; Boos, John Brad; Park, Doewon; Goetz, Peter G.; Rabinovich, William S.; Williams, Keith J.

Photonic microharp chemical sensors

OPTICS EXPRESS

IF3.3

2008-01-01

OAAI

Stievater, T. H.; Rabinovich, W. S.; Ferraro, M. S.; Papanicolaou, N. A.; Bass, R.; Boos, J. B.; Stepnowski, J. L.; McGill, R. A.

Mobility enhancement in strained p-InGaSb quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2007-07-25

102

PREAI

Bennett, Brian R.; Ancona, Mario G.; Brad Boos, J.; Shanabrook, Benjamin V.

Measured limits of detection based on thermal-mechanical frequency noise in micromechanical sensors

APPLIED PHYSICS LETTERS

IF3.6

2007-02-02

PREAI

Stievater, T. H.; Rabinovich, W. S.; Papanicolaou, N. A.; Bass, R.; Boos, J. B.

All-optical micromechanical chemical sensors (vol 89, pg 091125, 2006)

APPLIED PHYSICS LETTERS

IF3.6

2006-12-28

OAAI

Stievater, T. H.; Rabinovich, W. S.; Ferraro, M. S.; Papanicolaou, N. A.; Boos, J. B.; McGill, R. A.; Stepnowski, J. L.; Houser, E. J.

All-optical micromechanical chemical sensors

APPLIED PHYSICS LETTERS

IF3.6

2006-09-01

PREAI

Stievater, T. H.; Rabinovich, W. S.; Ferraro, M. S.; Papanicolaou, N. A.; Boos, J. B.; McGill, R. A.; Stepnowski, J. L.; Houser, E. J.

InAs HEMT narrowband amplifier with ultra-low power dissipation

ELECTRONICS LETTERS

IF0.8

2006-06-08

PREAI

Kruppa, W.; Boos, J. B.; Bennett, B. R.; Papanicolaou, N. A.; Park, D.; Bass, R.

High radiation tolerance of InAs/AlSb high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2005-10-18

PREAI

Weaver, BD; Boos, JB; Papanicolaou, NA; Bennett, BR; Park, D; Bass, R

Low-frequency noise in AlSb/InAs high-electron-mobility transistor structure as a function of temperature and illumination

APPLIED PHYSICS LETTERS

IF3.6

2004-08-02

PREAI

Kruppa, W; Yang, MJ; Bennett, BR; Boos, JB

Laterally patterned band structure in micromachined semiconductors

APPLIED PHYSICS LETTERS

IF3.6

2003-12-15

PREAI

Stievater, TH; Rabinovich, WS; Boos, JB; Katzer, DS; Biermann, ML

Coulomb blockade in single-layer Au nanocluster films

PHYSICAL REVIEW B

IF3.7

2001-06-22

PREAI

Ancona, MG; Kruppa, W; Rendell, RW; Snow, AW; Park, D; Boos, JB

Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers

APPLIED PHYSICS LETTERS

IF3.6

1998-03-09

PREAI

Bennett, BR; Yang, MJ; Shanabrook, BV; Boos, JB; Park, D

研究方向