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Suman Datta

Georgia Institute of Technology
H指数:79
被引数:2.3万

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Enhancing the 400 °C Forming-Gas Annealing Tolerance of Oxide–Semiconductor TFTs via Oxygen Postmetallization Annealing

通过氧后金属化退火提高氧化物半导体TFT在400°C下形成气退火的耐受性

2026-09-220
PRE
Dual-Gated ALD Oxide-Channel Nonvolatile Capacitive Memory Monolithically Integrated on Foundry 40-nm CMOS for Capacitive Digital Compute-in-Memory

双栅极ALD氧化物通道非挥发性电容性存储器,在代工厂40纳米CMOS上单片集成,用于电容数字存内计算

2026-04-070
OA
Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs During 400 °C Postprocessing Forming Gas Annealing

在掺杂InO TFTs于400 °C后处理形成气体退火期间的缺陷动力学和BTI行为的实验与建模

2026-02-040
PRE
GWTC-4.0: An Introduction to Version 4.0 of the Gravitational-Wave Transient Catalog

GWTC-4.0:引力波暂现源目录4.0版本的介绍

2025-12-090
OA
Machine Learning-Assisted Compact Modeling of AC Stress-Induced Bias Temperature Instability in Top- and Bottom-Gate W-Doped In₂O₃ Channel Semiconductor Transistors

机器学习辅助的交流应力诱导的偏压温度不稳定性在顶栅和底栅W掺杂In₂O₃沟道半导体晶体管中的紧凑建模

2025-08-010
PRE
Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate
2024-10-070
OA