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Low subthreshold slope in junctionless multigate transistors
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DOI：10.1063/1.3358131.png)
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The improvement of subthreshold slope due to impact ionization is compared between standard inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3358131]
Keyword:
IMPACT IONIZATION
SILICON
期刊
IF:
3.6
论文数:
10.4W
被引数:
17.8W
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