Qianlan Hu - Publications, H-index & Citations

Qianlan Hu

peking university

18H指数

69论文数

1.3K被引数

收录论文 13

发表时间

Amorphous indium tin oxide transistors for power amplification above 10 GHz 非晶铟锡氧化物晶体管用于10 GHz以上功率放大

Nature Electronics

IF40.9

2025-09-15

PREAI

Qianlan Hu; Shenwu Zhu; Yuzhe Zhu; Chengru Gu; Shiyuan Liu; Ru Huang; Yanqing Wu

3D stacked IGZO 2T0C DRAM array with multibit capability for computing in memory applications 具有多比特能力的3D堆叠IGZO 2T0C DRAM阵列，用于存内计算应用

SCIENCE ADVANCES

IF12.5

2025-05-23

OAAI

Li, Qijun; Hu, Qianlan; Zhu, Shenwu; Zeng, Min; Zhao, Wenjie

Scaling aligned carbon nanotube transistors to a sub-10 nm node 将对准的碳纳米管晶体管缩放到10 nm以下的节点

NATURE ELECTRONICS

IF40.9

2023-07-17

OAAI

Lin, Yanxia; Cao, Yu; Ding, Sujuan; Zhang, Panpan; Xu, Lin; Liu, Chenchen; Hu, Qianlan; Jin, Chuanhong; Peng, Lian-Mao; Zhang, Zhiyong

1/f noise of short-channel indium tin oxide transistors under stress

APPLIED PHYSICS LETTERS

IF3.6

2023-06-20

PREAI

Gu, Chengru; Hu, Qianlan; Li, Qijun; Zhu, Shenwu; Kang, Jiyang; Wu, Yanqing

True Nonvolatile High-speed DRAM Cells Using Tailored Ultrathin IGZO 使用定制超薄IGZO的真正非易失性高速DRAM单元

ADVANCED MATERIALS

IF26.8

2023-03-31

PREAI

Hu, Qianlan; Gu, Chengru; Li, Qijun; Zhu, Shenwu; Liu, Shiyuan; Li, Yu; Zhang, Lining; Huang, Ru; Wu, Yanqing

High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel

APPLIED PHYSICS LETTERS

IF3.6

2022-12-12

PREAI

Hu, Qianlan; Zhu, Shenwu; Gu, Chengru; Wu, Yanqing

Enhancement-Mode Field-Effect Transistors and High-Speed Integrated Circuits Based on Aligned Carbon Nanotube Films 基于定向碳纳米管薄膜的增强型场效应晶体管和高速集成电路

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-08-27

PREAI

Lin, Yanxia; Liang, Shibo; Xu, Lin; Liu, Lijun; Hu, Qianlan; Fan, Chenwei; Liu, Yifan; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors CVD Bernal堆叠双层石墨烯晶体管中的可调1/f噪声

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-03-19

PREAI

Tian, Mengchuan; Hu, Qianlan; Gu, Chengru; Xiong, Xiong; Zhang, Zhenfeng; Li, Xuefei; Wu, Yanqing

Reconfigurable Logic-in-Memory and Multilingual Artificial Synapses Based on 2D Heterostructures 基于2D异质结构的可重构内存逻辑和多语言人工突触

ADVANCED FUNCTIONAL MATERIALS

IF19

2020-01-31

116

PREAI

Xiong, Xiong; Kang, Jiyang; Hu, Qianlan; Gu, Chengru; Gao, Tingting; Li, Xuefei; Wu, Yanqing

Nanometre-thin indium tin oxide for advanced high-performance electronics

NATURE MATERIALS

IF38.5

2019-08-12

243

PREAI

Li, Shengman; Tian, Mengchuan; Gao, Qingguo; Wang, Mengfei; Li, Tiaoyang; Hu, Qianlan; Li, Xuefei; Wu, Yanqing

Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructures

NANOSCALE

IF5.1

2019-01-01

PREAI

Li, Tiaoyang; Li, Xuefei; Tian, Mengchuan; Hu, Qianlan; Wang, Xin; Li, Sichao; Wu, Yanqing

High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-05-31

PREAI

Tian, Mengchuan; Li, Xuefei; Li, Tiaoyang; Gao, Qingguo; Xiong, Xiong; Hu, Qianlan; Wang, Mengfei; Wang, Xin; Wu, Yanqing

First Demonstration of High-Temperature Reliability on La:HZO-La:In₂O₃ FeFET With High Endurance of 10¹⁰ at 125 °C 首次在La:HZO-La:In₂O₃ FeFET上展示高温可靠性，其高耐久性达到10¹⁰次循环，温度为125 °C。

IEEE Electron Device Letters

IF4.5

PREAI

Min Zeng; Shiwei Yan; Shiyuan Liu; Tianyue Fu; Qianlan Hu; Yanqing Wu

研究方向