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H

Hangbing Lv

huawei technologies company ltd.

53H指数
275论文数
1.0W被引数
收录论文 54
发表时间
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A Physics-Based Compact Model for Ferroelectric/Antiferroelectric Mixed Phase Capacitor Incorporating Reliability Characteristics一种基于物理的用于铁电/反铁电混合相电容器的紧凑模型，并包含可靠性特性
errIEEE Transactions on Electron Devices
IF3.2
err2025-08-01
err0
PREAI
errFeng Xu; Min Zhang; Huanan Liu; Bin Gao; Hangbing Lv; Heng Zhang; Yuyao Lu; Qiumeng Wei; Yuyan Wang; Huaqiang Wu; He Qian
err分享
err收藏
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing基于铁电鳍场效应晶体管的超低功耗紧凑型人工突触，用于时空信息处理
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2023-08-23
err2
errOAAI
errZhang, Zhaohao; Zhan, Guohui; Gan, Weizhuo; Cheng, Yan; Zhang, Xumeng; Peng, Yue; Tang, Jianshi; Zhang, Fan; Huo, Jiali; Xu, Gaobo; Zhang, Qingzhu; Wu, Zhenhua; Liu, Yan; Lv, Hangbing; Liu, Qi; Han, Genquan; Yin, Huaxiang; Luo, Jun; Wang, Wenwu
err分享
err收藏
A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory
errSCIENCE CHINA-INFORMATION SCIENCES
IF7.6
err2023-04-04
err1
PREAI
errZhao, Yulin; Wang, Yuan; Zhang, Donglin; Han, Zhongze; Hu, Qiao; Liu, Xuanzhi; Ding, Qingting; Cheng, Jinhui; Zhang, Wenjun; Cao, Yue; Zhou, Ruixi; Luo, Qing; Yang, Jianguo; Lv, Hangbing
err分享
err收藏
Probabilistic Circuit Implementation Based on P-Bits Using the Intrinsic Random Property of RRAM and P-Bit Multiplexing Strategy
errMICROMACHINES
IF3
err2022-06-10
err6
errOAAI
errLiu, Yixuan; Hu, Qiao; Wu, Qiqiao; Liu, Xuanzhi; Zhao, Yulin; Zhang, Donglin; Han, Zhongze; Cheng, Jinhui; Ding, Qingting; Han, Yongkang; Peng, Bo; Jiang, Haijun; Xue, Xiaoyong; Lv, Hangbing; Yang, Jianguo
err分享
err收藏
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging通过直接原子尺度成像观察HfO2-based忆阻器中导电丝系统的演化
errNATURE COMMUNICATIONS
IF15.7
err2021-12-13
err144
errOAAI
errZhang, Ying; Mao, Ge-Qi; Zhao, Xiaolong; Li, Yu; Zhang, Meiyun; Wu, Zuheng; Wu, Wei; Sun, Huajun; Guo, Yizhong; Wang, Lihua; Zhang, Xumeng; Liu, Qi; Lv, Hangbing; Xue, Kan-Hao; Xu, Guangwei; Miao, Xiangshui; Long, Shibing; Liu, Ming
err分享
err收藏
Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications
errSCIENCE CHINA-INFORMATION SCIENCES
IF7.6
err2021-09-07
err0
PREAI
errDing, Qingting; Gong, Tiancheng; Yu, Jie; Xu, Xiaoxin; Li, Xiaoyan; Lv, Hangbing; Yang, Jianguo; Luo, Qing; Yuan, Peng; Zhang, Feng; Liu, Ming
err分享
err收藏
Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes
errMICROMACHINES
IF3
err2021-07-30
err6
errOAAI
errZhang, Donglin; Peng, Bo; Zhao, Yulin; Han, Zhongze; Hu, Qiao; Liu, Xuanzhi; Han, Yongkang; Yang, Honghu; Cheng, Jinhui; Ding, Qingting; Jiang, Haijun; Yang, Jianguo; Lv, Hangbing
err分享
err收藏
One Transistor One Electrolyte-Gated Transistor Based Spiking Neural Network for Power-Efficient Neuromorphic Computing System用于节能神经形态计算系统的基于一个晶体管一个电解质门控晶体管的尖峰神经网络
errADVANCED FUNCTIONAL MATERIALS
IF19
err2021-04-18
err67
PREAI
errLi, Yue; Xuan, Zihao; Lu, Jikai; Wang, Zhongrui; Zhang, Xumeng; Wu, Zuheng; Wang, Yongzhou; Xu, Han; Dou, Chunmeng; Kang, Yi; Liu, Qi; Lv, Hangbing; Shang, Dashan
err分享
err收藏
A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory
errMICROMACHINES
IF3
err2021-04-01
err7
errOAAI
errWang, Qiao; Zhang, Donglin; Zhao, Yulin; Liu, Chao; Hu, Qiao; Liu, Xuanzhi; Yang, Jianguo; Lv, Hangbing
err分享
err收藏
Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing用于时空信息处理的基于氧化物的电解质门控晶体管
errADVANCED MATERIALS
IF26.8
err2020-10-20
err125
PREAI
errLi, Yue; Lu, Jikai; Shang, Dashan; Liu, Qi; Wu, Shuyu; Wu, Zuheng; Zhang, Xumeng; Yang, Jianguo; Wang, Zhongrui; Lv, Hangbing; Liu, Ming
err分享
err收藏
Ion-Gated Transistor: An Enabler for Sensing and Computing Integration离子门控晶体管: 传感和计算集成的推动者
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2020-09-21
err39
errOAAI
errBu, Xianbao; Xu, Han; Shang, Dashan; Li, Yue; Lv, Hangbing; Liu, Qi
err分享
err收藏
Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2020-04-28
err28
PREAI
errCheng, Yan; Cai, Daolin; Zheng, Yonghui; Yan, Shuai; Wu, Lei; Li, Chao; Song, Wenxiong; Xin, Tianjiao; Lv, Shilong; Huang, Rong; Lv, Hangbing; Song, Zhitang; Feng, Songlin
err分享
err收藏
A highly CMOS compatible hafnia-based ferroelectric diode一种高度CMOS兼容的hafnia基铁电二极管
errNATURE COMMUNICATIONS
IF15.7
err2020-03-13
err179
errOAAI
errLuo, Qing; Cheng, Yan; Yang, Jianguo; Cao, Rongrong; Ma, Haili; Yang, Yang; Huang, Rong; Wei, Wei; Zheng, Yonghui; Gong, Tiancheng; Yu, Jie; Xu, Xiaoxin; Yuan, Peng; Li, Xiaoyan; Tai, Lu; Yu, Haoran; Shang, Dashan; Liu, Qi; Yu, Bing; Ren, Qiwei; Lv, Hangbing; Liu, Ming
err分享
err收藏
A RISC-V Processor with Area-Efficient Memristor-Based In-Memory Computing for Hash Algorithm in Blockchain Applications
errMICROMACHINES
IF3
err2019-08-16
err8
errOAAI
errXue, Xiaoyong; Wang, Chenzedai; Liu, Wenjun; Lv, Hangbing; Wang, Mingyu; Zeng, Xiaoyang
err分享
err收藏
Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer StructureTa2O5/TaOx双层结构抑制导电桥式随机存取存储器中的细丝过度生长
errNANOSCALE RESEARCH LETTERS
IF4.1
err2019-03-28
err20
errOAAI
errYu, Jie; Xu, Xiaoxin; Gong, Tiancheng; Luo, Qing; Dong, Danian; Yuan, Peng; Tai, Lu; Yin, Jiahao; Zhu, Xi; Wu, Xiulong; Lv, Hangbing; Liu, Ming
err分享
err收藏
Performance-Enhancing Selector via Symmetrical Multilayer Design通过对称多层设计提高性能的选择器
errADVANCED FUNCTIONAL MATERIALS
IF19
err2019-01-09
err72
PREAI
errSun, Yiming; Zhao, Xiaolong; Song, Cheng; Xu, Kun; Xi, Yue; Yin, Jun; Wang, Ziyu; Zhou, Xiaofeng; Chen, Xianzhe; Shi, Guoyi; Lv, Hangbing; Liu, Qi; Zeng, Fei; Zhong, Xiaoyan; Wu, Huaqiong; Liu, Ming; Pan, Feng
err分享
err收藏
Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing
errSCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
IF7.5
err2018-05-08
err17
PREAI
errLiu, Qi; Zhang, XuMeng; Luo, Qing; Zhao, XiaoLong; Lv, HangBing; Long, ShiBing; Liu, Ming
err分享
err收藏
Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material
errACS OMEGA
IF4.3
err2017-10-18
err51
errOAAI
errBanerjee, Writam; Xu, Xiaoxin; Lv, Hangbing; Liu, Qi; Long, Shibing; Liu, Ming
err分享
err收藏
Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator
errSCIENTIFIC REPORTS
IF3.9
err2017-09-11
err32
errOAAI
errLi, Yu; Zhang, Meiyun; Long, Shibing; Teng, Jiao; Liu, Qi; Lv, Hangbing; Miranda, Enrique; Sune, Jordi; Liu, Ming
err分享
err收藏
Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2017-07-04
err41
PREAI
errBanerjee, Writam; Liu, Qi; Long, Shibing; Lv, Hangbing; Liu, Ming
err分享
err收藏

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