Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitorsAPPLIED PHYSICS LETTERSIF3.62019-10-3130PREAI
Nonvolatile Memories Based on Graphene and Related 2D MaterialsADVANCED MATERIALSIF26.82019-01-21246OAAI
Stress-Induced Crystallization of Thin Hf1-XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage ApplicationsACS APPLIED MATERIALS & INTERFACESIF8.22019-01-1728PREAI
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitorsAPPLIED PHYSICS LETTERSIF3.62018-10-3071PREAI
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 filmsAPPLIED PHYSICS LETTERSIF3.62018-04-26134PREAI
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2 capacitors due to stress-induced crystallization at low budgetAPPLIED PHYSICS LETTERSIF3.62017-12-12272PREAI
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