未登录

J

Jaidah Mohan

university of texas system

H指数:15

被引数:1,311

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors

在低温 (400 °C) 处理的基于Hf0.5Zr0.5O2的金属-铁电-金属电容器中，由压印现象引起的弛豫

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-02-148

PRE

Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

APPLIED PHYSICS LETTERS

IF3.6

2021-12-1328

PRE

Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-04-059

PREAI

Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis

使用同步加速器x射线分析HfxZr1-xO2薄膜的铁电性和铁电正交相之间的相关性

IF4.5

2021-03-2613

OAAI

Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon

APPLIED PHYSICS LETTERS

IF3.6

2021-03-1023

OAAI

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1-xO2/ZrO2 bilayer by atomic layer deposition

APPLIED PHYSICS LETTERS

IF3.6

2020-12-0926

PREAI

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

以肼为氮源低温热原子层沉积氮化铝

IF3.2

2020-07-3117

OAAI

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

用于大面积二维电子的层状氮化硼的原子层沉积

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-07-1525

PREAI

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2Thin Films

IF3.2

2020-07-0235

OAAI

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

APPLIED PHYSICS LETTERS

IF3.6

2019-10-3130

PREAI

Stress-Induced Crystallization of Thin Hf1-XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-01-1728

PREAI

Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

APPLIED PHYSICS LETTERS

IF3.6

2018-10-3071

PREAI

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

APPLIED PHYSICS LETTERS

IF3.6

2018-04-26134

PREAI

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2 capacitors due to stress-induced crystallization at low budget

APPLIED PHYSICS LETTERS

IF3.6

2017-12-12272

PREAI