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Lingming Yang

Xiangtan University

H指数:13

被引数:1,055

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Mesoscale modeling of fiber-reinforced rubber alkali-activated mortar under compression using discrete element method

基于离散元法的纤维增强橡胶碱激发砂浆压缩条件下的中尺度建模

Construction and Building Materials

IF8

2025-10-160

PRE

Split tensile strength of fiber-reinforced coral aggregate concrete: Deep learning model and experimental validation

纤维增强珊瑚骨料混凝土劈裂抗拉强度: 深度学习模型与实验验证

CONSTRUCTION AND BUILDING MATERIALS

IF8

2024-11-010

PRE

Failure mode and debris range prediction of an earth-covered magazine under internal blast loading

IF4.3

2024-05-010

PRE

DEM study on the effect of pore characteristic on single particle crushing behavior of porous articles

孔隙特性对多孔制品单颗粒破碎行为影响的DEM研究

COMPUTERS AND GEOTECHNICS

IF6.2

2024-01-013

PRE

A multi-strategy hybrid machine learning model for predicting glass-formation ability of metallic glasses based on imbalanced datasets

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2023-12-014

PRE

Influences of size, shape and strain rate on mechanical properties of single coral particle

JOURNAL OF BUILDING ENGINEERING

IF7.4

2023-11-012

PRE

Explicit expressions of the saturation flux density and thermal stability in Fe-based metallic glasses based on Lasso regression

IF4.8

2021-12-0110

PRE

Prediction of glass forming ability in amorphous alloys based on different machine learning algorithms

基于不同机器学习算法的非晶合金玻璃形成能力预测

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2021-10-0127

PREAI

Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and optoelectronic Applications

大尺寸二维硒纳米片的可控生长及其电子和光电应用

IF16

2017-09-28222

OAAI

How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

IF4.3

2017-08-0324

OAAI

Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors

IF5.1

2016-01-0129

PREAI

Performance Potential and Limit of MoS2 Transistors

ADVANCED MATERIALS

IF26.8

2015-01-13100

PREAI

Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors

IF4.5

2014-08-2956

OAAI